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3366results about "Surface treatment compositions" patented technology

Plasma cleaning and etching methods using non-global-warming compounds

Provided is a novel method of cleaning a chemical vapor deposition processing chamber having deposits on an inner surface thereof is provided. The process involves forming a plasma from one or more gases comprising a fluorine-containing but otherwise halogen-free non-global-warming compound, and contacting active species generated in the plasma with the inner surface of the chamber, with the proviso that the non-global-warming compound is not trifluoroacetic anhydride. Also provided is a method of etching a layer on a silicon wafer. The method involves the steps of: (a) introducing a silicon wafer into a processing chamber, the silicon wafer comprising a layer to be etched; and (b) forming a plasma from one or more gases comprising a fluorine-containing but otherwise halogen-free non-global-warming compound. Active species generated in the plasma are contacted with the silicon wafer, thereby etching the layer, with the proviso that the non-global-warming compound is not trifluoroacetic anhydride. The chemistries in accordance with the invention provide environmentally benign alternatives to the conventionally used global-warming chemistries for chamber cleaning and semiconductor etching processes.
Owner:LAIR LIQUIDE SA POUR LETUDE & LEXPLOITATION DES PROCEDES GEORGES CLAUDE

Method of using NF3 for removing surface deposits from the interior of chemical vapor deposition chambers

The present invention relates to a remote plasma cleaning method for removing surface deposits from a surface, such as the interior of a depositions chamber that is used in fabricating electronic devices. The process involves activating a gas stream comprising an oxygen source, NF3, and a fluorocarbon and contacting the activated gas mixture with surface deposits to remove the surface deposits.
Owner:MASSACHUSETTS INST OF TECH

Conformal oxide dry etch

A method of etching silicon oxide from a trench is described which allows more homogeneous etch rates up and down the sides of the trench. One disclosed method includes a sequential introduction of (1) a hydrogen-containing precursor and then (2) a fluorine-containing precursor into a substrate processing region. The temperature of the substrate is low during each of the two steps in order to allow the reaction to proceed and form solid residue by-product. A second disclosed method reverses the order of steps (1) and (2) but still forms solid residue by-product. The solid residue by-product is removed by raising the temperature in a subsequent sublimation step regardless of the order of the two steps.
Owner:APPLIED MATERIALS INC

Method of topology-selective film formation of silicon oxide

A method for forming a dielectric film containing a Si—O bond a trench formed in an upper surface of a substrate, includes: designing a topology of a final dielectric film containing a Si—O bond formed in the trench by preselecting a target portion to be selectively removed relative to a non-target portion of an initial dielectric film resulting in the final dielectric film; conformally depositing the initial dielectric film on the upper surface and in the trench; and relatively increasing an amount of impurities contained in the target portion of the initial dielectric film relative to an amount of impurities contained in the non-target portion of the initial dielectric film to obtain a treated dielectric film, thereby giving the target portion and the non-target portion different chemical resistance properties when subjected to etching.
Owner:ASM IP HLDG BV

Passivative chemical mechanical polishing composition for copper film planarization

A CMP composition containing 5-aminotetrazole, e.g., in combination with oxidizing agent, chelating agent, abrasive and solvent. Such CMP composition advantageously is devoid of BTA, and is useful for polishing surfaces of copper elements on semiconductor substrates, without the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions, e.g., Cu<2+>, in the bulk CMP composition at the copper / CMP composition interface during CMP processing.
Owner:ENTEGRIS INC

Methods and apparatuses for assembling elements onto a substrate

Methods and apparatuses for assembling elements onto a substrate. The surfaces of the elements and/or the substrate are treated and the elements are dispensed over the substrate in a slurry. In one example of the invention, the substrate is exposed to a surface treatment fluid to create a surface on the substrate which has a selected one of a hydrophilic or a hydrophobic nature, and a slurry is dispensed over the substrate. The slurry includes a fluid and a plurality of elements (each of which includes a functional component). Each of the plurality of elements is designed to be received by a receptor region on the substrate. The dispensing of the slurry with the fluid occurs after the substrate is exposed to the surface treatment fluid, and the fluid is the selected one of a hydrophilic or a hydrophobic nature. In another example of the invention, a plurality of elements is exposed to a surface treatment fluid to create surfaces on the elements having a selected one of a hydrophilic or a hydrophobic nature. A slurry is dispensed over a substrate, wherein the slurry contains a fluid and the plurality of elements which are designed to be received by a plurality of receptor regions. The fluid is the selected one of a hydrophilic or hydrophobic nature. In another example of an aspect of the invention, a surfactant is used with a slurry having elements which are deposited onto receptor regions in a fluidic self assembly process. Other examples of methods are also described.
Owner:RUIZHANG TECH LTD CO
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