Embodiments of the invention provide processes to form a high quality contact level connection to devices formed on a substrate. In one embodiment, a method for depositing a material on a substrate is provided which includes exposing the substrate to a buffered oxide etch solution to form a silicon hydride layer during a pretreatment process, depositing a metal silicide layer on the substrate, and depositing a first metal layer (e.g., tungsten) on the metal silicide layer. The buffered oxide etch solution may contain hydrogen fluoride and an alkanolamine compound, such as ethanolamine diethanolamine, or triethanolamine. The metal silicide layer may contain cobalt, nickel, or tungsten and may be deposited by an electroless deposition process. In one example, the substrate is exposed to an electroless deposition solution containing a solvent and a complexed metal compound.