The present invention relates to a novel
photoresist composition that can be developed with an aqueous alkaline solution, and is capable of being imaged at
exposure wavelengths in the deep
ultraviolet. The invention also relates to a process for imaging the novel
photoresist as well as novel
photoacid generators.The novel
photoresist comprises a) a
polymer containing an
acid labile group, and b) a novel mixture of photoactive compounds, where the mixture comprises a lower absorbing compound selected from structure 1 and 2, and a higher absorbing compound selected from structure 4 and 5, where, R1 and R2 R5, R6, R7, R8, and R9 are defined herein; m=1–5; X− is an anion, and Ar is selected from naphthyl, anthracyl, and structure 3, where R30, R31, R32, R33, and R34 are defined herein.