83 results about "Formamidinium" patented technology

A film comprising a crystalline halide perovskite composition having the following formula:AMX3   (1)wherein: A is an organic cation selected from the group consisting of methylammonium, tetramethylammonium, formamidinium, and guanidinium; M is at least one divalent metal; and X is independently selected from halide atoms; wherein the crystalline film of the halide perovskite composition possesses at least one of an average grain size of at least 30 microns, substantial crystal orientation evidenced in an ordering parameter of at least 0.6, and a level of crystallinity of at least 90%. Methods for producing films of these halide perovskite compositions using ionic liquids instead of volatile organic solvents are also described herein.

The present invention relates to a crystalline compound comprising: (i) Cs+ (caesium); (ii) (H2N—C(H)═NH2)+ (formamidinium); (iii) one or more metal or metalloid dications [B]; and (iv) two or more different halide anions [X]. The invention also relates to a semiconductor device comprising a semiconducting material, which semiconducting material comprises the crystalline compound. The invention also relates to a process for producing a layer of the crystalline compound.

There is provided a photovoltaic device that comprises a photoactive region, the photoactive region comprising a perovskite material of general formula A1−xA′xBX3−yX′y wherein A is a formamidinium cation ((HC(NH2)2)+), A′ is a caesium cation (Cs+), B is at least one divalent inorganic cation, X is iodide and X′ is bromide, and x is greater than 0 and equal to or less than 0.4 and y is greater than 0 and less than or equal to 3. There is also provided a method of producing a photovoltaic device comprising a photoactive region comprising the perovskite material, and formulations for use in the formation of the perovskite material.

The invention discloses a high-stability formamidine perovskite material, and a preparation method and application thereof. The preparation method comprises the following steps: 1, mixing a divalent metal halide, formamidine hydrohaloride and a specific additive, and dissolving the mixture in a high-polarity solution to obtain a precursor solution; and 2, preparing the precursor solution into a thin film by using a spin coating, blade coating or spray coating process, removing the high-polarity solution by using heating or anti-solvent washing, and heating the thin film at 150 DEG C to obtainthe formamidine perovskite material. The formamidine perovskite material prepared by the invention has good phase stability, narrow band gap width and good illumination operation stability.

There is provided a photovoltaic device that comprises a photoactive region, the photoactive region comprising a perovskite material of general formula A1-xA'xBX3-yX'y wherein A is a formamidinium cation(HC(NH)2)2 +), A' is a caesium cation (Cs+)B is at least one divalent inorganic cation, X is iodide and X' is bromide, and x is greater than 0 and equal to or less than 0.4and y is greater than 0 and less than or equal to 3. There is also provided a method of producing a photovoltaic device comprising a photoactive region comprising the perovskite material, and formulations for use in the formation of the perovskite material.

The invention belongs to a preparation method of a thin film material, and particularly relates to a post-repair method of a formamidino perovskite thin film through a post-gas repair mode. The methodcomprises the following steps: treating a formamidino perovskite (the structural formula is ABX3) initial film in ammonia gas, mixed gas containing the ammonia gas or a solution containing the ammonia gas for 0.1-30 minutes at 0-100 DEG C, thereby improving the uniformity of the formamidino perovskite film; introducing ammonia gas into the precursor solution forming the initial thin film to directly prepare the high-uniformity formamidino perovskite thin film. Compared with an evaporation method and a continuous deposition method, the process in the method is advantageous in that the processis easier to operate, low in cost and suitable for large-scale production; compared with an existing one-step solution method, the method has the advantages that large-area preparation can be achieved, and high crystallization quality is achieved; then the obtained film can be qualified for various device structures such as mesoporous and planar perovskite solar cells, diodes and lasers.

A film comprising a crystalline halide perovskite composition having the following formula:AMX3  (1)wherein: A is an organic cation selected from the group consisting of methylammonium, tetramethylammonium, formamidinium, and guanidinium; M is at least one divalent metal; and X is independently selected from halide atoms; wherein the crystalline film of the halide perovskite composition possesses at least one of an average grain size of at least 30 microns, substantial crystal orientation evidenced in an ordering parameter of at least 0.6, and a level of crystallinity of at least 90%. Methods for producing films of these halide perovskite compositions using ionic liquids instead of volatile organic solvents are also described herein.

The invention discloses a method for obtaining a formamidinium bromide / PMMA composite material through in-situ polymerization cladding and application thereof. The method comprises the steps that firstly, the thermal injection technology is adopted for synthesizing and obtaining high-quality formamidinium bromide quantum dots, and acetonitrile and methylbenzene are used for purifying the quantum dots; secondly, the quantum dots and an MMA solution are mixed according to a certain proportion, under the illumination condition, a reaction is performed for a period of time for polymerization, anda fluid product with the certain viscosity is obtained; finally, a film scraping method is used for preparing a uniform green fluorescent film. The formamidinium bromide / PMMA composite material can beused for constructing a white light LED. The water and oxygen resistant formamidinium bromide quantum dot composite film material can be manufactured, and the efficient white light LED device can beobtained.

Described herein is an ink solution, comprising a composition of formula (I): ABX3 (I), wherein A comprises at least one cation selected from the group consisting of methylammonium, tetramethylammonium, formamidinium, cesium, rubidium, potassium, sodium, butylammonium, phenethylammonium, phenylammonium, and guanidinium; B comprises at least one divalent metal; and X is at least one halide; and a mixed solvent system comprising two or more solvents selected from the group consisting of dimethyl sulfoxide, dimethylformamide, gamma-butyrolactone, 2-methoxyethanol, and acetonitrile. Methods for producing polycrystalline perovskite films using the ink solutions described herein and the use of the films in photovoltaic and photoactive applications are additionally described.

The present invention relates to a crystalline compound comprising: (i) Cs+ (caesium); (ii) (H2N—C(H)—NH2)+ (formamidinium); (iii) one or more metal or metalloid dications [B]; and (iv) two or more different halide anions [X]. The invention also relates to a semiconductor device comprising a semiconducting material, which semiconducting material comprises the crystalline compound. The invention also relates to a process for producing a layer of the crystalline compound.

The invention belongs to the technical field of preparation of optoelectronic materials and particularly relates to a copper-doped red-light perovskite quantum dot and a preparation method thereof. According to the method, a cesium salt or a formamidine salt, copper acetate, lead bromide and lead iodide are adopted as raw materials, organic acids and organic amine are adopted as ligands, and the stable and efficient copper-doped red-light perovskite quantum dot processable in solutions are rapidly synthesized through a thermal injection method. The stability of the red-light perovskite quantumdot is greatly improved through copper doping, and meanwhile, it is ensured that the high-fluorescence quantum efficiency of the quantum dot approaches 90%. According to the quantum dot, the absorption wavelength is increased along with the increase of the doping amount of copper, and a blue shift phenomenon of corresponding fluorescence emission wavelength of the quantum dot occurs. Obtained red-light perovskite quantum dot powder has high stability and can still be stored for more than 15 days under the condition that the air humidity is higher than 85%. The preparation method is simple andenvironmentally friendly, and the obtained red-light perovskite quantum dot can be applied to photoelectric devices such as light-emitting diodes, photoelectric detectors, laser devices and solar cells.

This invention relates to compositions for combating parasites in animals, comprising 1-arylpyrazole compounds alone or in combination with formamidine compounds. This invention also provides for an improved methods for eradicating, controlling, and preventing parasite infestation in an animal comprising administering the compositions of the invention to the animal in need thereof.

A perovskite solar cell with a composite electron transport layer structure relates to a perovskite solar cell. There is a conductive substrate, a composite electron transport layer, a perovskite film layer, a hole transport layer and a back electrode stacked in sequence; the composite electron transport layer is composed of zinc oxide, magnesium oxide and protonated ethanolamine; the perovskite film layer The chemical formula is ABX 3 , A is positive monovalent ions methylammonium, formamidinium ammonium, Cs + , Rb + etc., B is positive divalent ion Pb 2+ , Sn 2+ 、 Ge 2+ At least one of etc., X is F ‑ , Cl ‑ 、Br ‑ , I ‑ at least one of these. ZnO has high electron mobility and has a higher electron mobility than TiO 2 Higher electron transport capability. ZnO surface-modified MgO can reduce the recombination of interfacial charges at the interface, and intramolecular protonated EA + Effective contact with perovskite can be achieved, the extraction speed of electrons can be accelerated, and the charges accumulated at the interface can be released.