The invention discloses a preparation method of
zinc nitride thin film. The preparation method comprises following steps: (1) a substrate is placed in a
reaction chamber of an
atomic layer deposition apparatus; (2) a
zinc-containing precursor source is delivered into the
reaction chamber of the
atomic layer deposition apparatus so that the
zinc atoms in the zinc-containing precursor source are absorbed by the surface of the substrate; (3) a
nitrogen-containing precursor source is delivered into the
reaction chamber of the
atomic layer deposition apparatus, and then is ionized using
plasma, or a
nitrogen-containing precursor source which is ionized using
plasma is delivered into the reaction chamber of the atomic layer deposition apparatus, so that a part of the
nitrogen atoms in the ionized nitrogen-containing precursor source are precipitated, and nitrogen-zinc covalent bonds are formed by the precipitated nitrogen atoms with the zinc atoms on the surface of the substrate; and (4) the step (2) and the step (3) are repeated, so that layer by layer growth of the
zinc nitride thin film is realized. According to the preparation method, the
nitrogen source is delivered into an atomic layer deposition
system using the
plasma; and various high-quality
zinc nitride thin films with adjustable
band gap are obtained by adjusting chamber temperature, vacuum degree, circulating period, conditions of the plasma, and the like.