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58 results about "Zinc nitride" patented technology

Zinc nitride (Zn₃N₂) is an inorganic compound of zinc and nitrogen, usually obtained as (blue)grey crystals. It is a semiconductor. In pure form, it has the anti-bixbyite structure.

Method for preparing nitrogen aluminum co-doping p type zinc oxide thin film

The invention provides a method for preparing a nitrogen aluminum co-doping p type zinc oxide thin film. The method comprises the following steps that S1, high-purity zinc serves as a target material, a high-purity aluminum piece is placed on the target face, a substrate is placed above the target material, the distance between the substrate and the target material is adjustable, high-purity nitrogen gas is led to carry out radio frequency magnetron reactive sputtering, and the aluminum-contained zinc nitride thin film obtained through preparation serves as a precursor; S2, after the precursor is prepared, vacuumizing is carried out, high-purity oxygen is led to carry out in-situ low-pressure oxidization on a precursor thin film, and the nitrogen aluminum co-doping p type zinc oxide thin film is obtained through preparation. According to the method, on the premise that the performance of the precursor is optimized, the content of active nitrogen in the thin film is improved, and therefore the concentration and the migration rate of a hole carrier are increased, the resistance rate of the zinc oxide thin film is reduced, the resistance rate of the obtained zinc oxide thin film is reduced to 10.84W*cm, the concentration of the carrier reaches +4.65*1018cm-3, an optical band gap is 3.27 eV, and the crystalline state and the optical property of the thin film are good.
Owner:LINGNAN NORMAL UNIV

Zinc nitride and copper nitride compound of chiral alpha-phenylethylamine and use thereof

The invention discloses a zinc nitride and copper nitride compound of chiral alpha-phenylethylamine, which comprises a (S) alpha-phenylethylamine zinc nitride and copper nitride compound and a (R) alpha-phenylethylamine zinc nitride and copper nitride compound, which are prepared from the alpha-phenylethylamine, zinc acetate dihydrate, copper acetate monohydrate and copper chloride dihydrate and have the following formulas. In the formulas, ML is Zn(OOCCH3)2, Cu(OOCCH3)2 or CuCl2. The compound serves as a chiral catalyst in a Henry reaction.
Owner:HEFEI UNIV OF TECH

Method for preparing nitrogen oxygen zinc thin film

The invention discloses a method for preparing a nitrogen oxygen zinc thin film. Radio frequency magnetron sputtering is used, a zinc nitride target which is 99.9-99.999% in volume percentage is taken as sputtering target materials, and the distance between the target materials and a substrate is 20-150mm; under certain radio frequency, argon which is 99.9-99.999% in volume percentage is taken as sputtering gas, sputtering is carried out at the substrate temperature of 25-150DEG C and at power density of 0.5-5W / cm2, and the background vacuum of a sputtering room is smaller than 1*10-7torr; pre-sputtering is carried out for a period of time through the argon, and then oxygen which is 99.9-99.999% in volume percentage is taken as reaction gas to obtain the nitrogen zinc oxide thin film with oxygen flow of 0.1-60sccm and argon flow of 5-100sccm and at sputtering pressure of 0.1-10.0Pa, wherein the atomic number of Zn accounts for 51-66%, and N:O=1:3-2:1. The method for preparing the nitrogen zinc oxide thin film solves the problem that the nitrogen is low in solid solubility in zinc oxide, and the prepared n-type nitrogen zinc oxide thin film is high in carrier mobility and low in specific resistance.
Owner:SHENZHEN DANBANG INVESTMENT GROUP

Zinc target including fluorine, method of fabricating zinc nitride thin film by using the same, and method of fabricating thin film transistor by using the same

Provided are fluorine-containing zinc targets, methods of fabricating a zinc oxynitride thin film by using the zinc targets, and methods of fabricating a thin film transistor by using the zinc oxynitride thin film. The methods include mounting a fluorine-containing zinc target and a substrate in a sputtering chamber, supplying nitrogen gas and inert gas into the sputtering chamber, and forming a fluorine-containing zinc oxynitride thin film on the substrate.
Owner:SAMSUNG ELECTRONICS CO LTD

Method for preparing zinc nitride film

The invention relates to a method for preparing a zinc nitride film, which is characterized in that the mixed gas of nitrogen and argon is pumped into a sputtering combination plant when sputtering zinc, and stabler zinc nitride is prepared on a quartz substrate. The method comprises the steps: first, the quartz substrate is cleaned by alcohol, acetone and deionized water in ultrasonic wave, a zinc target is put into a magnetron sputtering chamber, and the quartz substrate is also placed in the sputtering chamber; the sputtering chamber is vacuumized below the high vacuum until the background vacuum is 10<-4>-10<-5>Pa; a flowmeter is turned on, the air in the gas circuit is firstly pumped, and nitrogen is started to be filled when the flow rate is reduced to be zero; when the flow rate is 60-80sccm, the gas is continuously pumped in the process; when being heated to 200 DEG C, the pressure intensity of the sputtering chamber is slightly increased, and then build-up of luminance is carried out; the reaction starts after half hour of pre-sputtering, and the reaction lasts for about two hours; when the reaction stops and the temperature of the sputtering chamber reduces to about 50 DEG C, the machine can be stopped, and the substrate is taken out. The film obtained by the method has low electric resistivity, high migration rate and transmittance, good stability, etc.
Owner:闫金承

Method for preparing acceptor zinc oxide film material by using thermal-oxidative zinc nitride

This invention relates to a preparation method of film materials of acceptor Zn oxide obtaining P-type Zn oxide material by high temperature thermal-oxidating Zn nitride single crystal film to control the acceptor impurity concentration of type-P Zn oxide material by controlling oxidation temperature and thermal-oxidative time. Nitride in cubic antiferro Mn ore is easy to be substituted by oxygen under high temperature and form hexagonal P-type Zn oxide, realizing nitride doped substitution to from P-type Zn oxide and process its film materials with the accepter concentration of 6X10 to the power 16 - 4X10 to the power 18 cm to the power -3 and hexagonal P-type Zn oxide film material, realizing control of Zn oxide electricity performance and carrier concentration which Satifies the needs of preparing P-N material of Zn oxide and photo electronic apparatus.
Owner:CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI

Casting method capable of preventing deformation of complex motor case

InactiveCN107470560AAvoid local sinking problemsExtend curing timeFoundry mouldsFoundry coresZinc nitrideSlag
The invention belongs to the technical field of complex motor cases, in particular to a casting method capable of preventing deformation of a complex motor case. The casting method capable of preventing deformation of the complex motor case comprises processes of melt processing, re-casting and step-by-step cooling of motor case materials. Compared with the prior art, the casting method capable of preventing deformation of the complex motor case has the following advantages that chromium carbide, zinc nitride and sulfur powder are added in the high temperature nitrogen protection atmosphere so that air entrapment can be avoided during melt casting, and excessive gas volume is avoided, the sand-type curing time can be prolonged, sand dropping or sand crushing in the casting process is avoided, and after columnar mold stripping, cooling is conducted first, then heating is conducted, the cooling speed is controlled, so that the problem of local shrinkage of the complex motor case can be avoided, the finish degree of the surface of a formed part is improved, and defects of blowholes, slag holes and sand holes are prevented; the product yield reaches 97%, wherein the problems of blowholes, sand holes and shrinkage accounts for about 25% of the scrap rate, and deformation of the complex motor case can be reduced effectively.
Owner:安徽省含山县潮林铸管厂(普通合伙)

Conductive ink composite material

The invention discloses a conductive ink composite material which is prepared from the following raw material formula components in parts by mass: 30-35 parts of polypyrrole, 5-6 parts of sodium borohydride, 45-50 parts of phenylenediamine, 6-8 parts of ferroferric oxide, 20-25 parts of zinc nitride composite nanometer silver powder, 20-30 parts of silicon nitride composite nanometer copper powder, 25-30 parts of silicon carbide composite nanometer silver powder, 8-10 parts of silicon carbide silicon carbide composite nanometer copper powder, 25-30 parts of titanium nitride composite nanometer zinc powder, 30-35 parts of titanium carbide composite nanometer silver powder, 14-20 parts of dimethylsilicone fluid and 10-15 parts of glycerin. The conductive ink composite material is reasonable in component configuration, high in adhesive force, excellent in conductivity, low in preparation cost and high in stability, and the dispersing stability of the conductive ink can be improved.
Owner:陈新堂
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