The invention relates to a method for preparing a zinc nitride film, which is characterized in that the mixed gas of nitrogen and argon is pumped into a sputtering combination plant when sputtering zinc, and stabler zinc nitride is prepared on a quartz substrate. The method comprises the steps: first, the quartz substrate is cleaned by alcohol, acetone and deionized water in ultrasonic wave, a zinc target is put into a magnetron sputtering chamber, and the quartz substrate is also placed in the sputtering chamber; the sputtering chamber is vacuumized below the high vacuum until the background vacuum is 10<-4>-10<-5>Pa; a flowmeter is turned on, the air in the gas circuit is firstly pumped, and nitrogen is started to be filled when the flow rate is reduced to be zero; when the flow rate is 60-80sccm, the gas is continuously pumped in the process; when being heated to 200 DEG C, the pressure intensity of the sputtering chamber is slightly increased, and then build-up of luminance is carried out; the reaction starts after half hour of pre-sputtering, and the reaction lasts for about two hours; when the reaction stops and the temperature of the sputtering chamber reduces to about 50 DEG C, the machine can be stopped, and the substrate is taken out. The film obtained by the method has low electric resistivity, high migration rate and transmittance, good stability, etc.