Method for preparing zinc nitride film

Abstract

The invention relates to a method for preparing a zinc nitride film, which is characterized in that the mixed gas of nitrogen and argon is pumped into a sputtering combination plant when sputtering zinc, and stabler zinc nitride is prepared on a quartz substrate. The method comprises the steps: first, the quartz substrate is cleaned by alcohol, acetone and deionized water in ultrasonic wave, a zinc target is put into a magnetron sputtering chamber, and the quartz substrate is also placed in the sputtering chamber; the sputtering chamber is vacuumized below the high vacuum until the background vacuum is 10<-4>-10<-5>Pa; a flowmeter is turned on, the air in the gas circuit is firstly pumped, and nitrogen is started to be filled when the flow rate is reduced to be zero; when the flow rate is 60-80sccm, the gas is continuously pumped in the process; when being heated to 200 DEG C, the pressure intensity of the sputtering chamber is slightly increased, and then build-up of luminance is carried out; the reaction starts after half hour of pre-sputtering, and the reaction lasts for about two hours; when the reaction stops and the temperature of the sputtering chamber reduces to about 50 DEG C, the machine can be stopped, and the substrate is taken out. The film obtained by the method has low electric resistivity, high migration rate and transmittance, good stability, etc.

Description

Technical field: [0001] The invention relates to a production method of a material, in particular to a preparation method of a zinc nitride thin film. Background technique: [0002] Through the research on the preparation method of zinc nitride thin film, it is found that zinc nitride is a wide bandgap semiconductor material, which is less studied in the world. Futsuhara et al. [1] In 1998, Zn was prepared on glass substrate by reactive sputtering method. 3 N 2 , to study the photoelectric properties of the film. In China, it was found that Zong et al. [2] Zinc nitride thin films are prepared by sputtering with zinc nitride targets, but the stability of the thin films is poor, and there is no in-depth study on the photoelectric properties of the thin films. From the perspective of materials at home and abroad, further research is needed on the forbidden band type and conductivity type of zinc nitride, and there is no report on the stability of zinc nitride. Invention c...

AI Technical Summary

Problems solved by technology

In China, it was found that Zong et al. [2] Zinc nitride film was prepared by sputtering zinc nitride target, but the stability of the film is poor, and there is no in-depth study on the photoelectric properties of the film

From the perspective of domestic and foreign materials, further research is needed on the forbidden band type and conductivity type of zinc nitride, and there is no report on the stability of zinc nitride.