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Method for preparing acceptor zinc oxide film material by using thermal-oxidative zinc nitride

A zinc oxide thin film and zinc nitride technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of inability to achieve effective doping, difficulty in obtaining p-type zinc oxide materials, and the like. The effect of controllable experimental conditions

Inactive Publication Date: 2004-06-09
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The purpose of the present invention is to solve the problem that due to the self-compensation effect of the wide bandgap semiconductor material, the doped nitrogen acceptor impurities have mutual repulsion in the zinc oxide, and the difficulty of effectively doping cannot be achieved, and it is difficult to obtain the p-type zinc oxide material. problem, will provide a method of preparing p-type zinc oxide thin film material by thermally oxidizing zinc nitride

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0007] Example 1 of the present invention: Preparation of p-type zinc oxide material by thermal oxidation of high-quality zinc nitride single crystal thin film

[0008] The temperature of the high-temperature diffusion furnace is selected as 500°C; the concentration of donor carriers grown on the quartz substrate and silicon substrate is 7×10 18 -9×10 18 .cm -3 , the resistivity range is 7-8×10 -3 The Ω.cm high-quality zinc nitride single crystal film is placed in a high-temperature diffusion furnace, and the temperature control accuracy is ±1°C. Introduce high-purity oxygen, and the oxidation time is 1 hour, then the acceptor concentration range is 3-5×10 17 .cm -3 p-ZnO material with hexagonal structure.

Embodiment 2

[0009] Example 2 of the present invention: Preparation of p-type zinc oxide material by thermal oxidation of high-quality zinc nitride single crystal thin film

[0010] will grow on quartz substrates and silicon substrates with a donor carrier concentration of 7×10 18 -9×10 18 .cm -3 , the resistivity range is 7-8×10 -3 The Ω.cm high-quality zinc nitride single crystal film is placed in a high-temperature diffusion furnace, and the furnace temperature is selected to be 700°C; the temperature control accuracy is ±1°C. Introduce high-purity oxygen, and the oxidation time is 1.5 hours, then the acceptor concentration range is 4-8×10 17 .cm -3 p-ZnO material with hexagonal structure.

Embodiment 3

[0011] Example 3 of the present invention: Preparation of p-type zinc oxide material by thermal oxidation of high-quality zinc nitride single crystal thin film

[0012] will grow on quartz substrates and silicon substrates with a donor carrier concentration of 7×10 18 -9×10 18 .cm -3 , the resistivity range is 7-8×10 -3 The Ω.cm high-quality zinc nitride single crystal film is placed in a high-temperature diffusion furnace, and the furnace temperature is selected as 800°C; the temperature control accuracy is ±1°C. Introduce high-purity oxygen, and the oxidation time is 2 hours, then the acceptor concentration range is 3-5×10 18 .cm -3 p-ZnO material with hexagonal structure.

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Abstract

This invention relates to a preparation method of film materials of acceptor Zn oxide obtaining P-type Zn oxide material by high temperature thermal-oxidating Zn nitride single crystal film to control the acceptor impurity concentration of type-P Zn oxide material by controlling oxidation temperature and thermal-oxidative time. Nitride in cubic antiferro Mn ore is easy to be substituted by oxygen under high temperature and form hexagonal P-type Zn oxide, realizing nitride doped substitution to from P-type Zn oxide and process its film materials with the accepter concentration of 6X10 to the power 16 - 4X10 to the power 18 cm to the power -3 and hexagonal P-type Zn oxide film material, realizing control of Zn oxide electricity performance and carrier concentration which Satifies the needs of preparing P-N material of Zn oxide and photo electronic apparatus.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials, and relates to a method for preparing an acceptor (p-type) type zinc oxide thin-film optoelectronic material by thermally oxidizing zinc nitride for zinc oxide ultraviolet light-emitting tubes, laser diodes and ultraviolet detectors. Background technique [0002] Zinc oxide material is a semiconductor material with wide direct bandgap (3.3eV), because its exciton binding energy (60meV) is much larger than room temperature thermal energy (26meV), it can achieve efficient exciton-related ultraviolet stimulated emission at room temperature . Therefore, it is an important material for the preparation of ultraviolet light-emitting tubes and laser diodes. However, due to the self-compensation effect of wide-bandgap semiconductor materials, the doped nitrogen acceptor impurities have mutual repulsion in zinc oxide, and it is difficult to achieve effective doping. It is difficult to obtai...

Claims

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Application Information

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IPC IPC(8): H01L21/20H01L21/36H01L31/00H01L33/00
Inventor 刘益春李炳生马剑钢吕有明申德振
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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