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Method for preparing P-type zinc oxide film from in situ low-pressure oxidized aluminum-doped zinc nitride

A zinc oxide film, zinc nitride technology, applied in ion implantation plating, coating, electrical components and other directions, can solve the problem of difficult to effectively control the active nitrogen content and so on

Inactive Publication Date: 2010-08-11
ZHANJIANG NORMAL UNIV
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Problems solved by technology

However, under the general process, it is difficult to effectively control the content of active nitrogen in the sample

Method used

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Embodiment Construction

[0009] The method for preparing a p-type zinc oxide thin film by in-situ low-pressure oxidation of aluminum-doped zinc nitride of the present invention adopts the zinc nitride thin film prepared by an ultra-high vacuum multi-target magnetron sputtering system as a precursor, and the target village is a 60 mm high Pure zinc (99.999%), high-purity aluminum sheets of different areas are placed on the target surface to control the aluminum content in the sample, and the distance between the target and the substrate is adjustable. The substrate is quartz glass. The substrate temperature was 200°C. The frequency of the RF source is 12.56MHz, and the input power is 50W. The working gases are nitrogen (99.999%) and argon (99.999%). The background vacuum of the reaction chamber is 10 -4 Pa, before reactive sputtering, rotate the baffle to cover the substrate, and use argon plasma to clean the pollutants on the target, the flow rate of argon is 20cm 3 / min, the air pressure is 1.2Pa...

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Abstract

The invention discloses a method for preparing a P-type zinc oxide film from in situ low-pressure oxidized aluminum-doped zinc nitride; an ultra-high vacuum magnetron sputtering system is adopted to prepare an aluminum-doped zinc nitride film on a quartz substrate as a precursor, wherein the select purity of a target is 99.999 percent high-purity zinc; and a high-purity aluminum sheet is put on the surface of the target to control the aluminum content in a sample. After the precursor is prepared, the background of a reaction chamber is vacuumized to be 10 to 4Pa, and 99.999 percent high-purity oxygen is fed in to oxidize the precursor at low pressure. The method improves the active nitrogen content in the zinc oxide with nitrogen and aluminum doping, improves the concentration and the mobility of a hole carrier, and reduces the resistivity of the zinc oxide film. When the oxidation temperature is 550DEG C, the resistivity is low to 19.8(ohm.cm), the concentration of the carrier reaches +4.6E1018cm-3. An optical band gap is 3.27Ev, and the film has excellent crystalline state and optical properties.

Description

technical field [0001] The invention relates to optoelectronic technology, especially a method for preparing p-type zinc oxide thin film by in-situ low-pressure oxidation of aluminum-doped zinc nitride Background technique [0002] Due to the strong demand for short-wavelength light-emitting devices in fields such as information technology, optoelectronic technology, and aerospace, wide-bandgap semiconductors such as zinc oxide, gallium nitride, and silicon carbide have become research hotspots worldwide. Compared with other wide-bandgap semiconductor materials, zinc oxide has many advantages: the exciton binding energy is as high as 60meV, which is conducive to obtaining efficient and stable room temperature exciton radiation; it can be prepared at a lower temperature, reducing the impurities and impurities introduced during material preparation. defects, and can greatly simplify the production process; it has higher thermal and chemical stability; it has stronger radiation...

Claims

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Application Information

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IPC IPC(8): C23C14/08C23C14/35H01L33/28
Inventor 张军邵乐喜薛书文李达
Owner ZHANJIANG NORMAL UNIV
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