Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of polycrystalline zinc nitride film

A technology of zinc nitride and thin film, which is applied in the field of preparation of polycrystalline zinc nitride thin film, can solve the problems of complicated process and small optical band gap of thin film, and achieve low cost, recyclable target material manufacturing and large optical band gap Effect

Inactive Publication Date: 2012-03-28
LUDONG UNIVERSITY
View PDF1 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Metal Zn target compared with Zn 3 N 2 The ceramic target is easy to manufacture, but the heating of the substrate makes the process complicated, and the optical bandgap of the film is small

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] (1) with purity 99.99wt.9%, the metal Zn target of diameter 60mm is installed in the water-cooled cathode target groove of the sputtering chamber of radio frequency magnetron sputtering device, the quartz substrate that will clean is put into substrate frame, Insert the substrate holder into the substrate turntable of the sputtering chamber, and adjust the distance between the Zn target and the substrate to be 60 mm;

[0021] (2) Pump up the sputtering chamber so that the basic vacuum of the sputtering chamber is 6.0×10 -4 Pa, substrate temperature room temperature.

[0022] (3) Fill the sputtering chamber with a sputtering gas Ar with a purity of 99.99% and a reaction gas NH with a purity of 99.9% 3 , NH 3 Gas flow 4sccm, Ar gas flow 16sccm, Ar gas and NH 3 The total gas flow rate is 20sccm.

[0023] (4) Adjust the control valve to reduce the pumping volume, so that the Ar-NH in the sputtering chamber 3 The gas pressure of the mixed gas is 1.0Pa, the radio frequen...

Embodiment 2

[0025]The target for sputtering is the same as that of Example 1, except that the distance between the Zn target and the substrate is 50mm in the step (1), and the basic vacuum of the sputtering chamber in the step (2) is 9.0×10 -4 Pa, NH in step (3) 3 The flow rate 1sccm of gas, the flow rate 19sccm of Ar gas, the Ar-NH of sputtering chamber in the step (4) 3 The gas pressure of the mixed gas is 0.5Pa, and the radio frequency sputtering power is 30W. The other preparation conditions of the film are the same as in Example 1. polycrystalline Zn 3 N 2 The film presents (321) and (222) preferred orientations, and belongs to indirect bandgap semiconductor with a bandgap width of 2.33eV.

Embodiment 3

[0027] The sputtering target is the same as in Example 1, except that the distance between the target and the substrate is 80mm in the step (1), and the NH in the step (3) 3 The flow rate 2sccm of gas, the flow rate 18sccm of Ar gas, the Ar-NH of sputtering chamber in the step (4) 3 The gas claw strength of the mixed gas is 2.5Pa, and the RF sputtering power is 200W. The other preparation conditions of the film are the same as in Example 1. polycrystalline Zn 3 N 2 The film presents (321) and (222) preferred orientations, and belongs to indirect bandgap semiconductor with a bandgap width of 2.38eV.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
Login to View More

Abstract

The invention discloses a preparation method of a polycrystalline zinc nitride film, belonging to the technical field of electronic materials, characterized in that: a polycrystalline Zn3N2 film is prepared at room temperature by reactive radio-frequency magnetron sputtering on a quartz substrate, the sputtering target is a pure metal Zn target, the distance between the sputtering target and the substrate is 50-80 mm, the basic vacuum of a sputtering chamber is less than 1.0*10<-3> Pa, the sputtering gas is argon, the reactive gas is ammonia, the flow range of the ammonia is 1-5 sccm, the flow range of the argon is 15-19 sccm, and the total flow of the argon and the ammonia is 20 sccm; the pressure intensity of the argon-ammonia mixed gas in the sputtering chamber is 0.5-2.5 Pa, the radio-frequency sputtering power is 30-200 w, and the temperature of the substrate is room temperature. The invention has the advantages of low cost, convenient preparation of target material, recycle target material, and no need of heating the substrate, and the prepared polycrystalline zinc nitride film has large optical band gap.

Description

(1) Technical field: [0001] The invention relates to a preparation method of a polycrystalline zinc nitride thin film, belonging to the technical field of electronic materials. (two) background technology: [0002] Semiconductor materials are an important part of modern materials science and play a pivotal role in the development of modern civilization. A variety of binary compound materials of zinc, especially ZnO materials, have been extensively studied. P-type doped ZnO is the basis for preparing ZnO junction devices and the key to realizing ZnO-based optoelectronic devices. It is of great significance to broaden the application fields of ZnO thin films. Zn 3 N 2 It is considered to be an important potential material for preparing high-quality P-type doped ZnO materials and light-emitting diodes, and has great commercial value, but its research is relatively small. Use Zn 3 N 2 thin film as a precursor, by thermal oxidation of Zn 3 N 2 P-type ZnO thin film is prep...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/06C23C14/35
Inventor 闫金良赵银女
Owner LUDONG UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com