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3462results about How to "Control thickness" patented technology

Back-gated fully depleted soi transistor

A fully depleted semiconductor-on-insulator (FDSOI) transistor structure includes a back gate electrode having a limited thickness and aligned to a front gate electrode. The back gate electrode is formed in a first substrate by ion implantation of dopants through a first oxide cap layer. Global alignment markers are formed in the first substrate to enable alignment of the front gate electrode to the back gate electrode. The global alignment markers enable preparation of a virtually flat substrate on the first substrate so that the first substrate can be bonded to a second substrate in a reliable manner.
Owner:GLOBALFOUNDRIES INC

Semiconductor device and manufacturing method for the same

In a method of manufacturing a semiconductor device, a first wiring line composed of a copper containing metal film is formed on or above a semiconductor substrate. A first interlayer insulating film is formed on a whole surface of the semiconductor substrate to cover the first wiring line. The first interlayer insulating film is selectively removed to form a connection hole reaching the first wiring line. A barrier metal film is formed to cover an inner surface of the connection hole and then a copper containing metal film is formed to fill the connection hole. The copper containing metal film formed outside the connection hole is removed. A second interlayer insulating film is formed on a whole surface of the semiconductor substrate to cover the copper containing metal film formed in the connection hole. The second interlayer insulating film is selectively removed to form a wiring line groove such that the copper containing metal film formed in the connection hole is exposed at a bottom. A barrier metal film is formed to cover an inside of the wiring line groove and then a copper containing metal film is formed to fill the wiring line groove. Then, the copper containing metal film outside the wiring line groove is removed to form a second wiring line.
Owner:TESSERA ADVANCED TECH

High-Voltage MOSFET with High Breakdown Voltage and Low On-Resistance and Method of Manufacturing the Same

A high-voltage transistor is formed in a deep well of a first conductivity type that has been formed in a semiconductor substrate or epitaxial layer of a second conductivity type. A body region of the second conductivity type is formed in the deep well, into which a source region of the first conductivity type is formed. A drain region of the first conductivity type is formed in the deep well and separated from the body region by a drift region in the deep well. A gate dielectric layer is formed over the body region, and a first polysilicon layer formed over the gate dielectric layer embodies the gate of the transistor. The field plate dielectric layer is formed over the drift region after the gate has been formed. Finally, the field plate dielectric is covered by a second polysilicon layer having a field plate positioned over the field plate dielectric layer in the drift region.
Owner:JU DONG HYUK

Film made from graphene-carbon nanotube composite material and preparation method of film

The invention discloses a film made from a graphene-carbon nanotube composite material and a preparation method of film. The preparation method comprises the following steps: mixing graphene and carbon nanotubes sufficiently and evenly via stirring and ultrasonic dispersion, reacting the graphene with the carbon nanotubes sufficiently via hydrothermal or solvothermal conditions, removing solvents after finishing the reaction to obtain the graphene-carbon nanotube composite materials which are preformed and tangled in a network structure, forming the film on the surfaces of various base materials via coating, spraying, spin-coating and filtering the obtained graphene-carbon nanotube composite materials to obtain the composite film made from the graphene-carbon nanotube composite materials and the base materials, and removing the base materials to obtain the film made from the graphene-carbon nanotube composite materials. According to the method, graphene-carbon nanotube composition is realized simply and effectively and dispersed in the solvents stably, and the two obtained films can be applied in the aspects of heat conduction and heat radiation systems of high calorific value electronic devices, LED (light-emitting diode) lamps and liquid crystal display products.
Owner:ZHANGJIAGANG KANGDE XIN OPTRONICS MATERIAL

Retardation film having a homeotropic alignment liquid crystal film and method for preparing the same

The present invention relates to a retardation film having a homeotropic alignment liquid crystal film, a polarizing film, an IPS (In-Plane Switching) mode liquid crystal display and a method for preparing the same. More particularly, the present invention relates to a homeotropic alignment liquid crystal film prepared from a liquid crystal mixed solution containing a polymerizable reactive liquid crystal monomer so as to improve a viewing angle characteristic of an ISP mode liquid crystal display and reduce a color shift; a retardation film prepared by integrating an oriented retardation film and a method for preparing the same; a polarizing film having the retardation film located between a polarizing element or plate and a liquid crystal cell and a method for preparing the same; and an IPS mode liquid crystal display having the polarizing film. There is an advantage in that since a homeotropic alignment liquid crystal film with a retardation of a thickness direction is prepared using a liquid crystal mixed solution containing a reactive liquid crystal monomer, a retardation film according to the present invention is not required for high-temperature heat treatment and cooling processes so that it can be applied to a high-speed continuous process. Further, there is an advantage in that a retardation film having an oriented retardation film integrated with the homeotropic alignment liquid crystal film is arranged between a polarizing element or polarizing plate of an IPS mod liquid crystal display and a liquid crystal cell so that a contrast ratio can be increased up to about 1520%, and a color shift characteristic can be also improved.
Owner:LG CHEM LTD
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