1309 results about "Boron containing" patented technology

A method of forming a boride layer for integrated circuit fabrication is disclosed. In one embodiment, the boride layer is formed by chemisorbing monolayers of a boron-containing compound and one refractory metal compound onto a substrate. In an alternate embodiment, the boride layer has a composite structure. The composite boride layer structure comprises two or more refractory metals. The composite boride layer is formed by sequentially chemisorbing monolayers of a boron compound and two or more refractory metal compounds on a substrate.

A method for dry etching and chamber cleaning high dielectric constant materials is disclosed herein. In one aspect of the present invention, there is provided a process for cleaning a substance comprising a dielectric constant greater than the dielectric constant of silicon dioxide from at least a portion of a surface of a reactor comprising: introducing a first gas mixture comprising a boron-containing reactive agent into the reactor wherein the first gas mixture reacts with the substance contained therein to provide a volatile product and a boron-containing by-product; introducing a second gas mixture comprising a fluorine-containing reactive agent into the reactor wherein the second gas mixture reacts with the boron-containing by-product contained therein to form the volatile product; and removing the volatile product from the reactor.

The present invention addresses this need by providing methods for depositing low resistivity tungsten films in small features and features having high aspect ratios. The methods involve depositing very thin tungsten nucleation layers by pulsed nucleation layer (PNL) processes and then using chemical vapor deposition (CVD) to deposit a tungsten layer to fill the feature. Depositing the tungsten nucleation layer involves exposing the substrate to alternating pulses of a boron-containing reducing agent and a tungsten-containing precursor without using any hydrogen gas, e.g., as a carrier or background gas. Using this process, a conformal tungsten nucleation layer can be deposited to a thickness as small as about 10 Angstroms. The feature may then be wholly or partially filled with tungsten by a hydrogen reduction chemical vapor deposition process. Resistivities of about 14 μΩ-cm for a 500 Angstrom film may be obtained.

Improved methods for depositing low resistivity tungsten films are provided. The methods involve depositing a tungsten nucleation layer on a substrate and then depositing a tungsten bulk layer over the tungsten nucleation layer to form the tungsten film. The methods provide precise control of the nucleation layer thickness and improved step coverage. According to various embodiments, the methods involve controlling thickness and / or improving step coverage by exposing the substrate to pulse nucleation layer (PNL) cycles at low temperature. Also in some embodiments, the methods may improve resistivity by using a high temperature PNL cycle of a boron-containing species and a tungsten-containing precursor to finish forming the tungsten nucleation layer.

The invention discloses a boron-containing efficient organic electroluminescent compound and application of the compound to an OLED device. The structural formula of the compound is as shown in the general formula (1). Boron atom as the core extends outward three six-membered rings composed of carbon-carbon single bonds, wherein the carbon-carbon single bonds also can be replaced with carbon-oxygen and carbon-nitrogen bonds; a benzene ring is sandwiched between each two six-membered rings; and each phenyl ring is respectively externally connected to hydrogen, aryl group, heteroaryl group, alkyl group, alkyloxy group, or arylamine group. The material has good fluorescence quantum efficiency and electroluminescent efficiency, is easy to form an amorphous film, and has good heat stability. Thus, the material can be used as a luminescent layer material in an organic electroluminescent device.

Boron containing phosphor compositions having the formulas (1) M3Ln2(BO3)4 doped with at least one activator selected from the group of Eu2+, Mn2+, Pb2+, Ce3+, Eu3+, Tb3+, and Bi3+ where M is at least one of Mg, Ca, Sr, Ba, or Zn, and Ln is at least one of Sc, Y, La, Gd, or Lu; (2) M2−xM′x(Al, Ga)2−y(Si, Ge)yB2O7−zNz:Eu2+, Mn2+, Pb2+ where M′ is one or more of alkali metals Na and / or K, M″ is one or more of alkaline earth Mg, Ca, Sr, Ba or Zn, 0≦x≦2, 0≦y≦2, 0≦z≦4; and z=x+y; (3) M′2−x+y′M″x−y′(Al, Ga)2−y(Si, Ge)yB2O7−z−y′NzXy:Eu2+, Mn2+, Pb2+, where M′ is one or more of alkali metals Na and / or K, M″ is one or more of alkaline earth metals Mg, Ca, Sr, Ba and / or Zn, 0≦x≦2, 0≦y≦2, 0≦z≦4; z=x+y, X═F and / or Cl, and 0≦y′≦2; (4) M′2−xM″xAl2−y+y′Siy−y′B2O7−z−y′NzXy:Eu2+, Mn2+, Pb2+, where M′ and M″ are defined above, 0≦x≦2, 0≦y≦2, 0≦z≦4; z=x+y, X═F and / or Cl, and 0≦y′≦2; (5) M′2−x+x′M″x−x″Al2−y+y′Siy−y′B2O7−z−x′−y′NzX(x′+y′):Eu2+, Mn2+, Pb2+, where M′ and M″ are defined above, 0≦x≦2, 0≦y≦2, 0≦z≦4; z=x+y, X═F and / or Cl, and 0≦y′≦2; (6) MAl2B2O7:Eu2+, Mn2+, Pb2+; where M═Mg, Ca, Sr, Ba or Zn; (7) MAl2−xSixB2O7−xNx:Eu2+, Mn2+, Pb2+, where M═Mg, Ca, Sr, Ba and / or Zn, and 0≦x≦2; and (8) MAl2B2−xSixO7−xNx:Eu2+, Mn2+, Pb2+, where M═Mg, Ca, Sr, Ba and / or Zn, and 0≦x≦2. Also disclosed are light emitting devices including a light source and at least one of the above phosphor compositions.

This invention relates to compounds useful for treating fungal infections, more specifically topical treatment of onychomycosis and / or cutaneous fungal infections. This invention is directed to compounds that are active against fungi and have properties that allow the compound, when placed in contact with a patient, to reach the particular part of the skin, nail, hair, claw or hoof infected by the fungus. In particular the present compounds have physiochemical properties that facilitate penetration of the nail plate.

The present invention addresses this need by providing methods for depositing low resistivity tungsten films in small features and features having high aspect ratios. The methods involve depositing very thin tungsten nucleation layers by pulsed nucleation layer (PNL) processes and then using chemical vapor deposition (CVD) to deposit a tungsten layer to fill the feature. Depositing the tungsten nucleation layer involves exposing the substrate to alternating pulses of a boron-containing reducing agent and a tungsten-containing precursor without using any hydrogen gas, e.g., as a carrier or background gas. Using this process, a conformal tungsten nucleation layer can be deposited to a thickness as small as about 10 Angstroms. The feature may then be wholly or partially filled with tungsten by a hydrogen reduction chemical vapor deposition process. Resistivities of about 14 μΩ-cm for a 500 Angstrom film may be obtained.

Methods of treating anti-inflammatory conditions through the use of boron-containing small molecules are disclosed.

Methods of forming boron-containing films are provided. The methods include introducing a boron-containing precursor into a chamber and depositing a network comprising boron-boron bonds on a substrate by thermal decomposition or a plasma process. The network may be post-treated to remove hydrogen from the network and increase the stress of the resulting boron-containing film. The boron-containing films have a stress between about −10 GPa and 10 GPa and may be used as boron source layers or as strain-inducing layers.

An insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding gas or oxynitriding gas, a third process gas containing a boron-containing gas, and a fourth process gas containing a carbon hydride gas. A first step performs supply of the first process gas and a preceding gas, which is one of the third and fourth process gases, while stopping supply of the second process gas and a succeeding gas, which is the other of the third and fourth process gases. A second step performs supply of the succeeding gas, while stopping supply of the second process gas and the preceding gas. A third step performs supply of the second process gas while stopping supply of the first process gas.

The invention discloses a boron-bearing hydrodesulfurization catalyst and a preparation method thereof. The boron-bearing hydrodesulfurization catalyst contains a carrier, at least one VIB hydrogenative reactive metal composition and at least one VIII hydrogenative reactive metal composition and boron; the catalyst is calculated by oxide and a catalyst is taken as a reference, the content of the VIB metal composition is between 0.5 and 35 weight percent, the content of the VIII metal composition is between 0.1 and 10 weight percent, the content of the boron is between 0.2 and 6 weight percent, and the content of the carrier is between 49 and 99.2 weight percent, wherein, the carrier contains alumina provided with a delta and / or theta structure. Compared with the prior catalyst, the catalyst has higher hydrodesulfurization activity.

A method of fabricating an integrated circuit device comprises etching a trench in a substrate and forming a dynamic random access memory (DRAM) cell having a storage capacitor at a lower end and an overlying vertical metal oxide semiconductor field effect transistor (MOSFET) comprising a gate conductor and a boron-doped channel. The method includes forming trenches adjacent the DRAM cell and a silicon-oxy-nitride isolation liner on either side of the DRAM cell, adjacent the gate conductor. Isolation regions are then formed in the trenches on either side of the DRAM cell. Thereafter, the DRAM cell, including the boron-containing channel region adjacent the gate conductor, is subjected to elevated temperatures by thermal processing, for example, forming a support device on the substrate adjacent the isolation regions. The nitride-containing isolation liner reduces segregation of the boron in the channel region, as compared to an essentially nitrogen-free oxide-containing isolation liner.