348 results about "Chemisorption" patented technology

The invention includes atomic layer deposition methods of depositing an oxide on a substrate. In one implementation, a substrate is positioned within a deposition chamber. A first species is chemisorbed onto the substrate to form a first species monolayer within the deposition chamber from a gaseous precursor. The chemisorbed first species is contacted with remote plasma oxygen derived at least in part from at least one of O2 and O3 and with remote plasma nitrogen effective to react with the first species to form a monolayer comprising an oxide of a component of the first species monolayer. The chemisorbing and the contacting with remote plasma oxygen and with remote plasma nitrogen are successively repeated effective to form porous oxide on the substrate. Other aspects and implementations are contemplated.

A method for restoring a porous surface of a dielectric layer formed on a substrate, includes: (i) providing in a reaction space a substrate on which a dielectric layer having a porous surface with terminal hydroxyl groups is formed as an outer layer; (ii) supplying gas of a Si—N compound containing a Si—N bond to the reaction space to chemisorb the Si—N compound onto the surface with the terminal hydroxyl groups; (iii) irradiating the Si—N compound-chemisorbed surface with a pulse of UV light in an oxidizing atmosphere to oxidize the surface and provide terminal hydroxyl groups to the surface; and (iv) repeating steps (ii) through (iii) to form a film on the porous surface of the dielectric layer for restoration.

A method of forming a boride layer for integrated circuit fabrication is disclosed. In one embodiment, the boride layer is formed by chemisorbing monolayers of a boron-containing compound and one refractory metal compound onto a substrate. In an alternate embodiment, the boride layer has a composite structure. The composite boride layer structure comprises two or more refractory metals. The composite boride layer is formed by sequentially chemisorbing monolayers of a boron compound and two or more refractory metal compounds on a substrate.

An ALD method includes exposing a substrate to a first precursor including a plurality of different ligands, chemisorbing a precursor monolayer on the substrate, and reacting a second precursor with the precursor monolayer to yield a product monolayer. A surface reactive ligand exhibits a chemisorption affinity that exceeds the chemisorption affinity exhibited by a gas reactive ligand. Another deposition method includes exposing a substrate to a precursor containing an amino and / or imino ligand and a halide ligand and depositing a layer. The precursor exhibits a volatility that exceeds the volatility with a halide ligand taking the place of each amino and / or imino ligand. The precursor exhibits a thermal stability that exceeds the thermal stability with an amino and / or imino ligand taking the place of each halide ligand. The layer may exhibit less halogen content than with a halide ligand taking the place of each amino and / or imino ligand.

A method of forming a carbon nano-material layer may involve a cyclic deposition technique. In the method, a chemisorption layer or a chemical vapor deposition layer may be formed on a substrate. Impurities may be removed from the chemisorption layer or the chemical vapor deposition layer to form a carbon atoms layer on the substrate. More than one carbon atoms layer may be formed by repeating the method.

New low-cost CO2 sorbents are provided that can be used in large-scale gas-solid processes. A new method is provided for making these sorbents that involves treating substrates with an amine and / or an ether so that the amine and / or ether comprise at least 50 wt. percent of the sorbent. The sorbent acts by capturing compounds contained in gaseous fluids via chemisorption and / or physisorption between the unit layers of the substrate's lattice where the polar amine liquids and solids and / or polar ether liquids and solids are located. The method eliminates the need for high surface area supports and polymeric materials for the preparation of CO2 capture systems, and provides sorbents with absorption capabilities that are independent of the sorbents' surface areas. The sorbents can be regenerated by heating at temperatures in excess of 35° C.

An ALD method includes exposing a substrate to a first precursor including a plurality of different ligands, chemisorbing a precursor monolayer on the substrate, and reacting a second precursor with the precursor monolayer to yield a product monolayer. A surface reactive ligand exhibits a chemisorption affinity that exceeds the chemisorption affinity exhibited by a gas reactive ligand. Another deposition method includes exposing a substrate to a precursor containing an amino and / or imino ligand and a halide ligand and depositing a layer. The precursor exhibits a volatility that exceeds the volatility with a halide ligand taking the place of each amino and / or imino ligand. The precursor exhibits a thermal stability that exceeds the thermal stability with an amino and / or imino ligand taking the place of each halide ligand. The layer may exhibit less halogen content than with a halide ligand taking the place of each amino and / or imino ligand.

In a method for forming a wiring of a semiconductor device using an atomic layer deposition, an insulating interlayer is formed on a substrate. Tantalum amine derivatives represented by a chemical formula Ta(NR1)(NR2R3)3 in which R1, R2 and R3 represent H or C1-C6 alkyl group are introduced onto the insulating interlayer. A portion of the tantalum amine derivatives is chemisorbed on the insulating interlayer. The rest of tantalum amine derivatives non-chemisorbed on the insulating interlayer is removed from the insulating interlayer. A reacting gas is introduced onto the insulating interlayer. A ligand in the tantalum amine derivatives chemisorbed on the insulating interlayer is removed from the tantalum amine derivatives by a chemical reaction between the reacting gas and the ligand to form a solid material including tantalum nitride. The solid material is accumulated on the insulating interlayer through repeating the above processes to form a wiring.

A method of forming a thin film with a low hydrogen contents is provided by positioning a substrate inside a processing chamber, and supplying reacting materials into the chamber, chemisorbing a portion of the reacting materials onto the substrate. Then, a nitrogen (N2) remote plasma treatment is performed to reduce the hydrogen content of thin film layer formed by chemisorption of the reacting materials on the substrate. Accordingly, a thin film is formed having a low hydrogen content, since the hydrogen bonds in the thin film layer formed by chemisorption of the reacting materials are removed.

The present invention provides a system and method for selectively removing organic and inorganic contaminants from plating baths. More particularly, the invented method relates to the use of a source of energy in combination with chemical oxidants, alone or in conjunction with a catalyst to oxidize organic contaminants in the plating bath to a level such that the electroplating bath can be recovered and reused after appropriate chemical adjustment. The oxidative treatment method may be a continuous process or a batch process that is performed in a single pass and the endpoint of the oxidative process detected by a sensor. Residual organics, and chloride ions in the bath are removed from the solution by a chemisorption or physisorption treatment. Inorganic contaminants are removed from the electroplating bath by selective ion exchange resins or electrodialysis, while particulate and suspended colloidal particles are removed by filtration before the treated plating bath is recycled.

The invention includes atomic layer deposition methods and chemical vapor deposition methods. In a particular aspect of the invention, a source of microwave radiation is provided proximate a reaction chamber. At least a fragment of a precursor material is chemisorbed on a substrate within the reaction chamber while not exposing the precursor material to microwave radiation from the source. Excess precursor material is removed from the chamber, and the chemisorbed material is subsequently exposed to microwave radiation from the source within the reaction chamber.

Methods for preparing a silicon oxynitride layer where the silicon oxynitride layer is deposited atop a substrate and have a low concentration of nitrogen at the interface of the silicon oxynitride layer and the substrate. The silicon oxynitride layer is formed by pulsing at least one interface precursor onto a substrate, where said substrate chemisorbs a portion of said at least one interface precursor to form a monolayer of said at least one interface precursor; and pulsing a nitrogen-containing precursor onto said substrate containing said monolayer of interface precursor, where said monolayer of said at least one interface precursor chemisorbs a portion of said nitrogen-containing precursor to form a monolayer of said nitrogen-containing precursor. The interface precursor includes oxygen-containing or silicon-containing precursor gasses.

The present invention teaches a novel approach of creating biocmpatible surfaces, said surfaces being capable of functionally interact with biological material. SAid biocompatible surfaces comrise at least two comonents, such as a hydrophobic substratum and a macromolecule of hydrophilic nature, which, in a cooperativity, form together the novel biocoompatible surfaces. The novel approach is ased on contacting said hydrophobic substratum with a laterally patterned monomolecular layer of said hydrophilic and flexible macromolecules, exhibiting a pronounced excluded volume. The htus formed two component surface is, in respect to polarity and morphology, a molecularly heterogeneous surface. Structural features of said macromolecular monolayer (as e.g. the layer thickness or its lateral density) are determined by: i) the structural features of the layer forming macromolecules (as e.g. their MW or their molecular architecture) and ii) the method of creating said monomolecular layer (as e.g. by physi- or chemisorbing, or by chemically binding said macromolecules). The structural features of the layer forming macromolecules(s) is in turn determined by synthesis. AMount and conformation and thus also biological activity of biological material (as e.g. polypeptides) which contact the novel biocompatible surface, is determined and maintained by the cooperative action of the underlying hydrophobic substratum and the macromolecular layer. In this way it becomes possible to maintain and control biological interactions between said contacted polypeptides and other biological compounds as e.g. cells, antibodies and the like. Consequently, the present invention aims to reduce and / or eliminate the deactivation and / or denaturation associated with the contacting of polypeptides and / or other biological material to a hydrophobic substratum surface.

A method of increasing ALP briefly, a preferred embodiment of the present invention includes a method of increasing ALP throughput by continuously modulating gas flow in a reactor to achieve layer by layer growth on a wafer. A first reactant is introduced with a percentage of a carrier gas. After a first time interval, the first reactant flow is reduced while the carrier gas flow is increased so as to maintain an approximately constant total gas flow. When the first reactant flow reaches a minimal, predetermined amount, a second reactant flow is initiated and increased while the carrier gas flow is decreased so as to continue a constant total gas flow. The method alternatively includes introducing a substance that enhances reactant adsorption and chemisorption, either as a first applied gas that reacts with the surface or as an added ligand to the reactant. Still further alternatives include a periodic rapid thermo anneal for improving film properties, parallel wafer processing and a reactant reservoir.

A method of forming a thin film with a low hydrogen contents is provided by positioning a substrate inside a processing chamber, and supplying reacting materials into the chamber, chemisorbing a portion of the reacting materials onto the substrate. Then, a nitrogen (N2) remote plasma treatment is performed to reduce the hydrogen content of thin film layer formed by chemisorption of the reacting materials on the substrate. Accordingly, a thin film is formed having a low hydrogen content, since the hydrogen bonds in the thin film layer formed by chemisorption of the reacting materials are removed.

In a method of forming a silicon-rich nanocrystalline structure by an ALD process, a first gas including a first silicon compound is provided onto an object to form a silicon-rich chemisorption layer on the object. A second gas including oxygen is provided onto the silicon-rich chemisorption layer to form a silicon-rich insulation layer on the object. A third gas including a second silicon compound is provided onto the silicon-rich insulation layer to form a silicon nanocrystalline layer on the silicon-rich insulation layer. The first gas, the second gas and the third gas may be repeatedly provided to alternately form the silicon-rich nanocrystalline structure having a plurality of silicon-rich insulation layers and a plurality of silicon nanocrystalline layers on the object.

The present invention provides a system and method for selectively removing one or more organic and also preferably one or more inorganic contaminants from plating baths. More particularly, the invented method relates to the use of a source of energy in combination with chemical oxidants, alone or in conjunction with a catalyst to oxidize organic contaminants in the plating bath to a level such that the electroplating bath can be recovered and reused after appropriate chemical adjustment. The oxidative treatment method may be a continuous process or a batch process that is performed in a single pass and the endpoint of the oxidative process detected by a sensor. Residual organics, if desired, and chloride ions in the bath are removed from the solution by a chemisorption or physisorption treatment. Inorganic contaminants are removed from the electroplating bath by selective ion exchange resins or electrodialysis, while particulate and suspended colloidal particles are removed by filtration before the treated plating bath is recycled.

A method and system to reduce the resistance of refractory metal layers by controlling the presence of fluorine contained therein. The present invention is based upon the discovery that when employing ALD techniques to form refractory metal layers on a substrate, the carrier gas employed impacts the presence of fluorine in the resulting layer. As a result, the method features chemisorbing, onto the substrate, alternating monolayers of a first compound and a second compound, with the second compound having fluorine atoms associated therewith, with each of the first and second compounds being introduced into the processing chamber along with a carrier gas to control a quantity of the fluorine atoms associated with the monolayer of the second compound.

A process and composition for selectively adsorbing oxygen from a gaseous mixture. The chemisorption is carried out by a porous three-dimensional transition element complex comprised of intermolecularly bound TEC units, said units further comprised of at least one multidentate ligand forming at least one five- or six-membered chelate ring on each unit.

A system and method to remove a polluting agent or contaminant, including but not limited to mercury, from the liquid phase of a process system using an adsorbent. In one exemplary embodiment, a magnetic or non-magnetic support with a chemisorbing or physisorbing sorbent is suspended in the liquid phase of a process system, under conditions in which the polluting agent binds to the adsorbent. The pollutant-bearing adsorbent may then be separated from the process system by either physical or magnetic means. The polluting agent may then disassociated from the adsorbent so the adsorbent is regenerated and capable of repeated use.

The present invention discloses a functionalized silicon coating mesoporous magnetic carrier. The carrier is a compound magnetic carrier having a core-shell structure formed by coating the magnetic ferroferric oxide with the silicon dioxide and an active amido or mercapto is bonded on the surface of the magnetic carrier and the active amido or mercapto can apply the selective chemisorption effect to the target chemical. The present invention simultaneously discloses a preparation method for the carrier, which in particular is that the thickness and uniformity of the silicon film are increased through two times of silicon coating processes so as to effectively protect the magnetic carrier from being corroded by acid and base in the application; the template agent on the surface of the carrier is detracted with high temperature under the inert atmosphere and the porecreating processing is applied to the surface of the carrier so as to increase the effective surface area of the carrier and enhance the processing performance. The fixed active bacterium for the funtionalized silicon coating mesoporous magnetic carrier can be applied in the treatment of the urban domestic sewage delivers good treatment effect and has important meaning to the environment protection.

The invention provides a method for removing mercury from a liquid or gas hydrocarbon stream, mixtures thereof, including mixtures of liquid streams with a solid carbonaceous substance, by contacting the hydrocarbon stream with a composition comprising silver and a support material, wherein the composition as measured by ammonia chemisorption has a surface acidity in the range of 0.1-10.0 μmole of irreversible NH3 / g of the composition.

The invention discloses a nonionic aqueous polyurethane emulsion and a preparation method thereof, belonging to the technical field of high-molecular materials. The nonionic aqueous polyurethane emulsion comprises polyether polyol or polyester polyol, isocyanate, micromolecular chain extender, nonionic hydrophilic chain extender, hydrophilic chain extender, 0.6-1 weight portions of cross-linking agent, lower boiling point solvent, catalyst, amine neutralizer, amine chain extender, 0.4-2 weight portions of aqueous wetting agent, and aqueous levelling agent. The preparation method is characterized in that: prepolymerization, polymerization, emulsification, distillation, compounding are carried out to prepare the nonionic aqueous polyurethane emulsion, then the aqueous wetting agent and aqueous levelling agent are added with stirring to obtain an aqueous nonionic polyurethane glass fibre impregnating compound. The prepared nonionic aqueous polyurethane emulsion disclosed herein has the advantages of good stability, long stable phase, wide application scope, high strength, wear resistance, good elasticity, yellow stain resistance, aging resistance, solvent resistance, low temperature resistance, tortuosity resistance, good penetration, compatibility, good interface chemical combination or chemisorption and other excellent performances.

The invention discloses a high-magnetic heavy-metal ion adsorbent carrying conductive high molecules and a preparation method thereof. The adsorbent comprises high-magnetic microspheres carrying conductive high molecules, each of which comprises a Fe3O4 polycrystal sphere cluster, an amorphous SiO2 protective layer and a polypyrrole adsorption outer layer from inside to outside. The preparation method of the adsorbent is realized in a way that: carrying out a solvent thermal reduction reaction on soluble ferrites to obtain the Fe3O4 magnetic sphere cluster; carrying out the basic hydrolysis by using tetraethoxysilane to obtain the Fe3O4-SiO2 nuclear shell sphere cluster; and finally, carrying out the free radical polymerization reaction on the pyrrole monomers to obtain the Fe3O4-SiO2-polypyrrole functional particles. The heavy-metal ion adsorbent has the characteristics of stable property, high adsorption rate and reproducibility, has favorable adsorption and recovery properties on dichromic ions, and has the advantages of simple preparation process, low material price and no environmental pollution. Compared with the normal chemical absorbent, the product of the invention is convenient to use and achieves the effects of waste water treatment, pollution abatement and environment protection.

In a method of forming a silicon-rich nanocrystalline structure by an ALD process, a first gas including a first silicon compound is provided onto an object to form a silicon-rich chemisorption layer on the object. A second gas including oxygen is provided onto the silicon-rich chemisorption layer to form a silicon-rich insulation layer on the object. A third gas including a second silicon compound is provided onto the silicon-rich insulation layer to form a silicon nanocrystalline layer on the silicon-rich insulation layer. The first gas, the second gas and the third gas may be repeatedly provided to alternately form the silicon-rich nanocrystalline structure having a plurality of silicon-rich insulation layers and a plurality of silicon nanocrystalline layers on the object.

The present invention provides a system and method for selectively removing one or more organic and inorganic and also preferably one or more inorganic contaminants from plating baths. More particularly, the invented method relates to the use of a source of energy in combination with chemical oxidants, alone or in conjunction with a catalyst to oxidize organic contaminants in the plating bath to a level such that the electroplating bath can be recovered and reused after appropriate chemical adjustment. The oxidative treatment method may be a continuous process or a batch process that is performed in a single pass. Residual organics, if desired and chloride ions in the bath are removed from the solution by a chemisorption or physisorption treatment. Inorganic contaminants are removed from the electroplating bath by selective ion exchange resins or electrodialysis, while particulate and suspended colloidal particles are removed by filtration before the treated plating bath is recycled.

An apparatus and method for detecting a gas with high sensitivity, high SNR, and low cost is disclosed. Embodiments of the present invention include sensor nodes that communicate with a common controller, where each sensor node includes a resonant sensor that comprises a resonator having a selectively chemisorptive layer disposed upon it. The chemisorptive layer is a nanoparticle-based layer that improves the trapping probability for target-gas molecules, thereby improving the correspondence of the resonance frequency of the resonator to the gas concentration in the atmosphere in which it resides, and improving the sensitivity of the resonant sensor as compared to prior-art resonant mass sensors. Measurement of an electrical parameter of the chemisorption layer can also be used as a secondary detection mode. By employing the chemisorptive layer as an efficient and selective mass-collection layer affords embodiments of the present invention improved noise immunity.