892results about How to "Improve variation" patented technology

In order to fabricate a high performance thin film semiconductor device using a low temperature process in which it is possible to use low price glass substrates, a thin film semiconductor device has been fabricated by forming a silicon film at less than 450 DEG C., and, after crystallization, keeping the maximum processing temperature at or below 350 DEG C. In applying the present invention to the fabrication of an active matrix liquid crystal display, it is possible to both easily and reliably fabricate a large, high-quality liquid crystal display. Additionally, in applying the present invention to the fabrication of other electronic circuits as well, it is possible to both easily and reliably fabricate high-quality electronic circuits.

Systems and methods for establishing and / or maintaining the prediction capability over time of a multivariate calibration model designed for quantitative optical spectroscopic measurement of attributes or analytes in bodily tissues, bodily fluids or other biological samples, which are particularly useful when the spectral absorbance of the attribute or analyte is small relative to the background. The present invention provides an optically similar reference sample to capture the characteristics of instrument and environmental variation and to reduce the effect of such variation on the measurement capability of the model. The optically similar reference is preferably stable over time and is designed such that its optical properties are sufficiently matched to the sample of interest that instrument and environmental variations are captured in the same manner in both the test sample of interest and the optically similar reference sample. The optically similar reference sample may include one or more physical components which are spectroscopically measured in a manner which closely mimics the spectroscopic measurement of the test sample of interest. Spectral similarity may also be achieved by using alternative components with spectral characteristics similar to the components contained in the test sample of interest.

We have discovered that adding H2 to a precursor gas composition including SiH4, NH3, and N2 is effective at improving the wet etch rate and the wet etch rate uniformity across the substrate surface of a-SiNx:H films which are deposited on a substrate by PECVD. Wet etch rate is an indication of film density. Typically, the lower the wet etch rate, the denser the film. The addition of H2 to the SiH4 / NH3 / N2 precursor gas composition did not significantly increase the variation in deposited film thickness across the surface of the substrate. The a-SiNx:H films described herein are particularly useful as TFT gate dielectrics in the production of flat panel displays. The uniformity of the film across the substrate enables the production of flat panel displays having surface areas of 25,000 cm2 and larger.

Embodiments of the invention relate to systems and methods for multi-player gaming. Some embodiments relate to systems having an improved communications infrastructure and improved handheld game controllers, while other embodiments relate to improvements in handling large numbers of players in the multi-player game when played in a game arena with a single large display screen showing the multi-player game images. In one particular embodiment, a system is provided that has a game server controlling a display system to display the multi-player game on the large screen and a plurality of game controllers. Each game controller has a secondary display means for providing a secondary game display and input means for receiving player input. The system further comprises communication mans for enabling communication between the game server and each of the plurality of game controllers. The plurality of game controllers are located in proximity to the large display screen such that it is visible to game players manipulating the game controllers while playing the multi-player game.

A method for performing model based optical proximity correction (MBOPC) and a system for performing MBOPC is described, wherein the process model is decomposed into a constant process model term and a pattern dependent portion. The desired wafer target is modified by the constant process model term to form a simulation target that is used as the new target within the MBOPC process. The pattern dependent portion of the model is used as the process model in the MBOPC algorithm. This results final mask designs that result in improved across-chip line width variations, and a more robust MBOPC process.

The invention discloses a high efficiency incandescent and Compact Fluorescent (CFL) bulb replacement LED lamp having a good color reproduction. The LED light bulb includes two groups of semiconductor light emitters and a luminescent material to emit four different spectrums of light. The two groups of semiconductor light emitters are enclosed around an interior wall of the light bulb housing, which has a plurality of fins at an exterior surface for effective heat dissipation. A high reflective member having a dome shape in the center is disposed under the two groups of semiconductor light emitters to redirect the emission and excitation lights from the two groups of semiconductor light emitters and recycle the backscattered light for multi-spectrum light mixing. The LED-light bulb further includes a single power line connecting to the two groups of semiconductor light emitters and a high efficiency electrical AC / DC conversion and control device. The light bulb has a diffuser dome for an output window and a conventional Edison-mount screw-type light bulb socket, a conventional fluorescent tube coupler arrangement or a conventional halogen MR-16 socket arrangement connecting to an AC power base. If a voltage is supplied to the AC / DC conversion and control device, a mixture light from the diffuser dome produces a warm white light with a color rendering index of at least 85 and a luminous efficacy of at least 80 lumens per watt.

A piezoelectric resonator of the present invention is structured such that on a substrate 5 having a cavity 4 formed therein, a lower electrode 3, a piezoelectric body 1, a spurious component control layer 16, and an upper electrode 2 are formed in this order from bottom up. The spurious component control layer 16 is a layer for controlling a spurious frequency, and composed of, for example, a metallic material, a dielectric material, or a piezo electric material. By additionally providing the spurious component control layer 16, it is made possible to cause variation of the spurious frequency due to unwanted variation to become greater than variation in resonance frequency of the main resonance of the piezoelectric resonator. Thus, it is possible to realize a piezoelectric resonator having an admittance frequency response where no spurious component occurs between resonance frequency fr and antiresonance frequency fa.

A photoelectric conversion device includes a light detection circuit which includes an optical sensor to output a current signal corresponding to illuminance and a current-voltage conversion circuit to convert the current signal output from the optical sensor into a voltage signal; an amplifier to amplify the voltage signal output from the light detection circuit; a comparison circuit to compare voltage output from the amplifier and reference voltage and output the result to a control circuit; and the control circuit to determine an illuminance range to be detected depending on the output from the comparison circuit and output a control signal to the light detection circuit. The current-voltage conversion circuit has a function of changing a resistance value in accordance with the control signal.

A method for reducing lens aberrations sensitivity and proximity effects of alternating phase shifted masks is described. The critical features of a chip design layout are first identified. Multiple, narrow phase regions and auxiliary phase transitions, which provide additional opaque features, are then formed alongside the critical features such that a grating pattern of substantially uniform pitch is printed. Together with a complementary trim mask, the circuit pattern so delineated has reduced sensitivity to lens aberrations and proximity effects.

A semiconductor device has a first semiconductor region formed in a semiconductor substrate and having a first conductivity type due to first-conductivity-type active impurities contained in the first semiconductor region, and a second semiconductor region formed between the first semiconductor region and the surface of the semiconductor substrate and having a second conductivity type due to second-conductivity-type active impurities contained in the second semiconductor region. The second semiconductor region contains first-conductivity-type active impurities, whose concentration is zero or smaller than a quarter of a concentration of the second-conductivity-type active impurities contained in the second semiconductor region. An insulating film and a conductor are formed on the second semiconductor region. Third and fourth semiconductor regions of the second conductivity type are formed at the semiconductor surface in contact with the side faces of the second semiconductor region. This semiconductor device is capable of suppressing net impurity concentration variations as well as threshold voltage variations to be caused by a short channel effect or manufacturing variations.

A method and system for clear signal capture comprehend several individual aspects that address specific problems in improved ways. In addition, the method and system also comprehend a hands-free implementation that is a practical solution to a very complex problem. Individual aspects comprehended related to echo and noise reduction, and divergence control.

Eight-bit digital image data of R, G and B output from an image data memory are corrected by conversion controllers to meet characteristics of a liquid crystal panel. The corrected data are input to a liquid crystal drive circuit as digital image data, and an image is displayed on the liquid crystal panel. A LUT stored in a LUT reference processor stores data (addresses) by a number that makes it possible to refer to input image digital data at one to one. A random number generator is for generating random numbers and supplying the random numbers to a round-to-integer processor as threshold value data. The round-to-integer processor compares the data referred to by the LUT reference processor with the threshold data, and carries out a round-to-integer processing.

Symbol-image windows are arranged in matrix of three rows and five columns. Five game lines to be nominated are provided so as to horizontally and diagonally combine the symbol-image windows. Jackpot winning occurs when identical symbol images are displayed at one of three groups of the symbol-image windows. The first group is constituted of the first to third columns. The second group is constituted of the second to fourth columns. The third group is constituted of the third to fifth columns. When the identical symbol images are displayed at one of the five columns, sub-game winning occurs to award a sub game in which a symbol-image series is rotated again in the central symbol-image window. In another embodiment, ten game lines to be nominated are provided so as to vertically, horizontally and diagonally combine the symbol-image windows.

A hybrid electric propulsion system for powering a vehicle using a natural fuel engine and an electric motor. The hybrid electric vehicle is comprised of a drive train; an electric motor for driving the drive train; an auxiliary power unit (APU); an electric energy storage system electrically coupled to the electric motor; and wherein the auxiliary power unit and the electric energy storage system provide energy for powering the vehicle. An electric bus is directly connected to both the auxiliary power unit and the electric energy source and the voltage across the electric bus is substantially the same as the voltage across the electric energy source so that a change in voltage of the electric bus results in the same change to the voltage across the electric energy source. A power management controller is programmed to control output power of the power unit to maintain the energy storage system between a predetermined high voltage set-point and a predetermined low voltage set-point.

Disclosed is a combinative decorative light equipment wherein a plurality of lighting elements are mutually connected into several individual lamp groups by wires in series or series-parallel manner, so as to be hung on a structural framework. The upper connectors of said lamp groups are installed on the connecting device of different structural frameworks, and which are connected into a decoration framework, so that the lamp groups on different structural frameworks are mutually connected to form larger lamp groups and assembled into a pre-designed decoration body.

A traffic signal system for congested trafficways has a plurality of stationary alarm light / sensor-reader combinations and mobile alarm light / sensor-reader combinations monitoring each other and monitory tags placed on individuals, machines, and hazards to provide real time alarms to not only pedestrians but also machine operators, who are potentially approaching harm's way, or have the better ability to avert potential harm. Different forms of alarms are provided to indicate different kinds of alarm conditions and to reduce complacency to alarms, and thus improve effectiveness.

There is here disclosed a semiconductor device comprising a semiconductor element, a first substrate disposed to face one side of the element, being provided first internal wirings on a main surface, and being provided first external wirings connected to the respective first internal wirings on another main surface, and a second substrate formed to be larger than the element by a material having flexibility, being disposed to face another side of the element, being provided second internal wirings having one-end portions extended to edges of a main surface, and the one-end portions connected to the first internal wirings with being bent toward the first substrate together with the edges, being mounted the element having an electrode connected to some of the second internal wirings on the main surface, and being provided external terminals connected to some of the second internal wirings on a middle of another main surface.

A string arrangement for a detachment type waist-protecting belt to hold the vertebra region of a vertebra related patient is provided. The string arrangement enables a separate fastening of the upper portion and lower portion of the belt to form a saddle like shape that fits the contour of the waist of an individual patient dynamically with or without the extra support of a frame. The waist-protecting belt can also be connected to a back supporting frame, which is comprised of two plastic plates, via two guiding nuts, fixed on the center of the exterior side of the inner-half of the rim of each solid plastic plate, guided through the two narrow and long holes found on the wider portions of the belt, and held in place by two wide head bolts which screw on to the nuts. Then the upper portion and lower portion of the frame is adjusted separately by the movement of the upper and lower portion of the belt.

The present invention provides a high frequency amplifier using a power supply voltage regulate circuit for the purpose of compensating for variations in power supply voltage. The high frequency amplifier comprises three-stage power amplifiers which amplify an input signal and output the amplified signal, a bias circuit which supplies bias voltages for controlling these power amplifiers, a regulate circuit which compensates for variations in noise or gain with respect to the variations in the power supply voltage for driving the power amplifiers, etc. The regulate circuit holds constant an output voltage Vddc with respect to variations in power supply voltage Vdd and outputs the constant-held output voltage Vddc as a power supply voltage for the power amplifiers.

The procedure of the present invention specifies predetermined elements included in a matrix F which is obtained by Fourier transform of master image data P0 (step S122), and adds a minute variation ΔF of a predetermined magnitude to either a real number array FR or an imaginary number array FI of the predetermined elements (step S124 and S126). Here note that the minute variation ΔF should be subtracted from corresponding elements, in order to keep the symmetry of the Fourier spectrum. A resulting image obtained by an inverse transform of the matrix with the minute variation ΔF added thereto includes a phase difference pattern W01 that is embedded therein and corresponds to the minute variation ΔF. As long as a master image is closed to the public, this embedded pattern can not be taken out of the resulting image nor be deleted by overwriting attacks. Even if the processed data with the digital watermark embedded therein is exposed to overwriting attacks of different pieces of watermark information by the similar algorithm, the arrangement of the information enables the digital watermark embedded in the master data to be taken out accurately. The similar series of processing may be carried out with regard to a specific area of the low frequency component obtained by wavelet transform of the mater image.

A semiconductor device manufacturing method includes the steps of: forming a transistor on a surface side of a silicon layer of a silicon-on-insulator substrate, the silicon-on-insulator substrate being formed by laminating a substrate, an insulating layer, and the silicon layer; forming a first insulating film covering the transistor and a wiring section including a part electrically connected to the transistor on the silicon-on-insulator substrate; measuring a threshold voltage of the transistor through the wiring section; forming a supporting substrate on a surface of the first insulating film with a second insulating film interposed between the supporting substrate and the first insulating film; removing at least a part of the substrate and the insulating layer on a back side of the silicon-on-insulator substrate; and adjusting the threshold voltage of the transistor on a basis of the measured threshold voltage.

On a display screen, a game image, which contains one or more game character images showing a game character and item images each showing an item, is displayed. An item type is determined by causing a player to select at least one item image displayed on the display screen. If the player's input is provided to the touch panel, a coordinate value, which indicates a position on the touch panel where the player's input is provided, is detected at predetermined time intervals. Further, a graphical shape of an input trajectory represented by a group of detected coordinate values is identified. A process detail for changing a characteristic parameter of the game character is changed in accordance with a combination of the item type and the graphical shape of the input trajectory.

According to the present invention, a material having a light-shielding property is used for a bank layer surrounding the edge of a light-emitting element. Accordingly, light which is not reflected by an object to be read out can be prevented from entering an image pick-up element, and information on the object to be read out can be correctly read out. The display device mounted with a read function according to the present invention includes a thin film transistor and an image pick-up element over a substrate having an insulating surface, an insulating layer covering a thin film transistor and an image pick-up element, a light-emitting element provided over the insulating layer, and a bank layer having a light-shielding property surrounding the edge of the light-emitting element. The bank layer has an opening portion in a position overlapping with the image pick-up element.

An object of the present invention is to provide a mass-storage nonvolatile memory device capable of performing high speed operation. The nonvolatile memory device comprises a memory array comprising a plurality of memory cells arranged in a matrix, each of the memory cells comprising a variable resistor element formed of a manganese-containing oxide having a perovskite structure in which an electric resistance is varied by application of a voltage pulse and a variation amount of the electric resistance is variable depending on the magnitude of the voltage amplitude; and a program pulse generation circuit that, in order to program 3-level or larger multi-level data corresponding to one erase state and two or more program states into the variable resistor element, is capable of performing generation of program pulses having two or more different voltage amplitudes corresponding to the program states, the generation being separately performed corresponding to program data.

A manufacturing method for a semiconductor device which is capable of manufacturing the semiconductor device with a high quality in high yields while reducing variations in electric characteristic is disclosed. The manufacturing method according to the present invention includes a main body wafer manufacturing process for manufacturing a wafer on which a semiconductor device to be completed as a product is formed and a monitor wafer manufacturing process for manufacturing a wafer on which a monitor element is formed, the processes sharing a monitoring step alone, the main body wafer manufacturing process including a variation reduction step, the monitor wafer manufacturing process including a quality check step and a condition setting step.

There is here disclosed a semiconductor device comprising a semiconductor element, a first substrate disposed to face one side of the element, being provided first internal wirings on a main surface, and being provided first external wirings connected to the respective first internal wirings on another main surface, and a second substrate formed to be larger than the element by a material having flexibility, being disposed to face another side of the element, being provided second internal wirings having one-end portions extended to edges of a main surface, and the one-end portions connected to the first internal wirings with being bent toward the first substrate together with the edges, being mounted the element having an electrode connected to some of the second internal wirings on the main surface, and being provided external terminals connected to some of the second internal wirings on a middle of another main surface.

In a method of forming a silicon-rich nanocrystalline structure by an ALD process, a first gas including a first silicon compound is provided onto an object to form a silicon-rich chemisorption layer on the object. A second gas including oxygen is provided onto the silicon-rich chemisorption layer to form a silicon-rich insulation layer on the object. A third gas including a second silicon compound is provided onto the silicon-rich insulation layer to form a silicon nanocrystalline layer on the silicon-rich insulation layer. The first gas, the second gas and the third gas may be repeatedly provided to alternately form the silicon-rich nanocrystalline structure having a plurality of silicon-rich insulation layers and a plurality of silicon nanocrystalline layers on the object.

A method is provided that includes: determining a minimum clock cycle that can be used to propagate a signal about the critical cycle in a circuit design; wherein the critical cycle is a cycle in the design that has a highest proportionality of delay to number of registers; determining for a circuit element in the circuit design, sequential slack associated with the circuit element; wherein the sequential slack represents a minimum delay from among respective maximum delays that can be added to respective structural cycles of which the circuit element is a constituent, based upon the determined limit upon clock cycle duration; using the sequential slack to ascertain sequential optimization based design flexibility throughout multiple stages of a design flow.