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747 results about "Carbon doped" patented technology

Selective etching of carbon-doped low-k dielectrics

The present invention includes a process for selectively etching a low-k dielectric material formed on a substrate using a plasma of a gas mixture in a plasma etch chamber. The gas mixture comprises a fluorine-rich fluorocarbon or hydrofluorocarbon gas, a nitrogen-containing gas, and one or more additive gases, such as a hydrogen-rich hydrofluorocarbon gas, an inert gas and / or a carbon-oxygen gas. The process provides a low-k dielectric to a photoresist mask etching selectivity ratio greater than about 5:1, a low-k dielectric to a barrier / liner layer etching selectivity ratio greater about 10:1, and a low-k dielectric etch rate higher than about 4000 Å / min.
Owner:APPLIED MATERIALS INC

Low leakage heterojunction vertical transistors and high performance devices thereof

A method for forming and the structure of a vertical channel of a field effect transistor, a field effect transistor and CMOS circuitry are described incorporating a drain, body and source region on a sidewall of a vertical single crystal semiconductor structure wherein a hetero-junction is formed between the source and body of the transistor, wherein the source region and channel are independently lattice strained with respect the body region and wherein the drain region contains a carbon doped region to prevent the diffusion of dopants (i.e., B and P) into the body. The invention reduces the problem of short channel effects such as drain induced barrier lowering and the leakage current from the source to drain regions via the hetero-junction and while independently permitting lattice strain in the channel region for increased mobility via choice of the semiconductor materials. The problem of scalability of the gate length below 100 nm is overcome by the heterojunction between the source and body regions.
Owner:GLOBALFOUNDRIES INC

High-strength and high-toughness reactive powder concrete of carbon doped nano-tube and preparation method of high-strength and high-toughness reactive powder concrete

The invention provides high-strength and high-toughness reactive powder concrete of a carbon doped nano-tube. The high-strength and high-toughness reactive powder concrete is prepared by taking cement, a carbon nano-tube, silica fume, a water reducing agent, silica sand, coal ash, quartz powder, steel fiber and water as raw materials, wherein all the components in the mixture are calculated in parts by mass: 1000-1200 parts of cement, 250-350 parts of silica fume, 250-350 parts of slag powder, 40-50 parts of water reducing agent, 1200-1400 parts of silica sand, 180-230 parts of water, 190-230 parts of steel fiber, 180-250 parts of coal ash, 80-120 parts of quartz powder, 0.1-5 parts of carbon-nano-tube dispersing agent and 1-10 parts of carbon nano-tube powder. The invention also provides a preparation method of the high-strength and high-toughness reactive powder concrete. The reactive powder concrete obtained by the invention has the high compression strength of 250-300MPa and breaking strength of 45-60MPa, which are higher than the 200-level related performances of the traditional RPC (Reactive Powder Concrete). Meanwhile, the initial cracking strength of the reactive powder concrete material prepared by using the carbon nano-tube is greatly improved and is up to 10MPa in a direct stretching state, and the tensile strain corresponding to peak stress is up to more than 0.5%, so that the toughness and strength of the traditional RPC material are greatly improved.
Owner:浙江固邦新材料有限公司

Vanadium sodium phosphate composite material as well as preparation method and application thereof

The invention relates to a vanadium sodium phosphate composite material as well as a preparation method and an application thereof. The general formula of the composite material provided by the invention is C1-xNx-LaNabMcVd(PO4)3, wherein C1-xNx is carbon or carbon doped with nitrogen, L is one or two selected from Li and K; M is one or more than one selected from Mg, B, Al, Ca, Ti, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ce, Y, Zr, Nb, Mo, Sn, La, Ta and W; and x, a, b, c and d are mol percents, wherein x is more than or equal to 0 and less than 1, a is more than or equal to 0 and less than 2, b is more than 1 and less than or equal to 3, c is more than or equal to 0 and less than or equal to 1, and d is more than or equal to 1 and less than or equal to 2. The invention also provides a preparation method and an application of the composite material. The vanadium sodium phosphate composite material can be taken as cathode or anode material of a secondary sodium-ion battery, especially vanadium sodium phosphate composite material coated with carbon and nitrogen has higher coulombic efficiency and ion and electron conductivity and better cycling performance, is high in safety, low in price, simple in process and wide in application range and can be applied to energy storage equipment, a backup power supply, a spare power supply and the like.
Owner:INST OF PHYSICS - CHINESE ACAD OF SCI

Method for forming interconnection line in semiconductor device and interconnection line structure

Methods for forming an interconnection line and interconnection line structures are disclosed. The method includes forming an interlayer insulating layer on a semiconductor substrate, wherein the interlayer insulating layer is formed of a carbon-doped low-k dielectric layer. An oxidation barrier layer is formed on the interlayer insulating layer. An oxide capping layer is formed on the oxidation barrier layer. A via hole is in the oxide capping layer, the oxidation barrier, and the interlayer insulating layer. A conductive layer pattern is formed within the via hole.
Owner:SAMSUNG ELECTRONICS CO LTD
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