74results about How to "Reduce particle pollution" patented technology

Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-containing amorphous carbon films on a substrate with reduced particle contamination. In one implementation, the method comprises flowing a hydrocarbon-containing gas mixture into a processing volume having a substrate positioned therein, flowing a boron-containing gas mixture into the processing volume, stabilizing the pressure in the processing volume for a predefined RF-on delay time period, generating an RF plasma in the processing volume after the predefined RF-on delay time period expires to deposit a boron-containing amorphous film on the substrate, exposing the processing volume of the process chamber to a dry cleaning process and depositing an amorphous boron season layer over at least one surface in the processing volume of the process chamber.

Blocker plates for chemical vapor deposition chambers and methods of treating blocker plates are provided. The blocker plates define a plurality of holes therethrough and have an upper surface and a lower surface that are at least about 99.5% pure, which minimizes the nucleation of contaminating particles on the blocker plates. A physically vapor deposited coating, such as an aluminum physically vapor deposited coating, may be formed on the upper and lower surfaces of the blocker plates. Chemical vapor deposition chambers including blocker plates having a physically vapor deposited coating thereon are also provided.

Methods and apparatus for reducing particle contamination on a reticle used in an extreme ultraviolet (EUV) lithography process. According to one aspect of the present invention, an apparatus that protects a surface of an object includes a plate that is positioned in proximity to the surface and protects at least a first portion of the surface. An opening is defined within the plate, and is such that a second portion of the surface is exposed through the opening. The apparatus also includes at least one magnetic component which creates a static magnetic field that is arranged to deflect charged particles away from the opening and the surface of the object.

Fluidized bed reactor systems for producing high purity silicon-coated particles are disclosed. A vessel has an outer wall, an insulation layer inwardly of the outer wall, at least one heater positioned inwardly of the insulation layer, a removable concentric liner inwardly of the heater, a central inlet nozzle, a plurality of fluidization nozzles, at least one cooling gas nozzle, and at least one product outlet. The system may include a removable concentric sleeve inwardly of the liner. In particular systems the central inlet nozzle is configured to produce a primary gas vertical plume centrally in the reactor chamber to minimize silicon deposition on reactor surfaces.

The invention relates to a device for filtering contaminants, such as particulates and vapor phase contaminants, from a confined environment such as electronic or optical devices susceptible to contamination (e.g. computer disk drives) by providing an improved performance recirculation filter.

Methods and apparatus for using a flow of a relatively cool gas to establish a temperature gradient between a reticle and a reticle shield to reduce particle contamination on the reticle are disclosed. According to one aspect of the present invention, an apparatus that reduces particle contamination on a surface of an object includes a plate and a gas supply. The plate is positioned in proximity to the object such that the plate, which has a second temperature, and the object, which has a first temperature, are substantially separated by a space. The gas supply supplies a gas flow into the space. The gas has a third temperature that is lower than both the first temperature and the second temperature. The gas cooperates with the plate and the object to create a temperature gradient and, hence, a thermophoretic force that conveys particles in the space away from the object.

A sensor system for determining a parameter of a fluid medium, e.g., an intake air mass flowing through a channel, includes at least one sensor chip situated in the channel for determining the parameter, which sensor chip is accommodated in a sensor carrier which (i) protrudes into the channel and (ii) has a leading edge situated transverse to the flow of the fluid medium. At least one vortex generator is provided, at least in the region of the leading edge, and configured for forming secondary flows in the flowing fluid medium in the region of the sensor carrier, for avoiding or reducing the entry of particles. The secondary flows extend in a plane essentially perpendicular to the main flow direction of the fluid medium, e.g., facing away from the sensor area.

A nonvolatile ferroelectric memory device includes a plurality of top array blocks disposed along a first direction, each having a plurality of top sub-cell array blocks disposed along a second direction perpendicular to the first direction, each of the top sub-cell array blocks include a first plurality of unit cells, a plurality of bottom array blocks disposed along the first direction below the plurality of top array blocks, each having a plurality of bottom sub-cell array blocks disposed along the second direction, each of the bottom sub-cell array blocks include a second plurality of unit cells, a plurality of sub-bit lines extending along the second direction and disposed at equal first intervals along the first direction, each sub-bit line connected to at least a first end of one of the first and second pluralities of unit cells, and a plurality of main bit lines extending along the second direction and disposed at the equal first intervals along a third direction perpendicular to both the first and second directions.

Methods and apparatus for using a flow of a relatively cool gas to establish a temperature gradient between a reticle and a reticle shield to reduce particle contamination on the reticle are disclosed. According to one aspect of the present invention, an apparatus that reduces particle contamination on a surface of an object includes a plate and a gas supply. The plate is positioned in proximity to the object such that the plate, which has a second temperature, and the object, which has a first temperature, are substantially separated by a space. The gas supply supplies a gas flow into the space. The gas has a third temperature that is lower than both the first temperature and the second temperature. The gas cooperates with the plate and the object to create a temperature gradient and, hence, a thermophoretic force that conveys particles in the space away from the object.

An EUV reticle pod is provided. The pod includes an inner and an outer box assembly. The inner box assembly contained in the outer box assembly includes a base and a cover. The base has an upper surface and a surrounding wall. The upper surface includes a carry surface, at least one trench, and a first contacting surface. The EUV reticle is carried above the carry surface. The trench has a circular loop structure and its bottom is lower than the carry surface. The carry surface, the trench, and the first contacting surface are sequentially distributed from the center of the upper surface towards the surrounding wall. The cover has a concave for accommodating the EUV reticle and a second contacting surface for cooperating with the first contacting surface to form an air-tight seal. The trench captures and traps particles to reduce the particle contamination on the reticle.

A method for singulating semiconductor wafers is disclosed. A preferred embodiment comprises forming scrub lines on one side of the wafer and filling the scrub lines with a temporary fill material. The wafer is then thinned by removing material from the opposite side of the wafer from the scrub lines, thereby exposing the temporary fill material on the opposite side. The temporary fill material is then removed, and the individual die are removed from the wafer.

An electrochemical deposition system having two or more electrochemical deposition modules arranged on a common platform and configured for depositing one or more metals on a substrate is described. Each electrochemical deposition module includes an anode compartment configured to contain a volume of anolyte fluid, a cathode compartment configured to contain a volume of catholyte fluid, and a membrane separating the anode compartment from the cathode compartment. Each electrochemical deposition module further includes a workpiece holder configured to hold opposing edges of a flexible workpiece between first and second leg members via a clamping mechanism, and a loader module configured to position the flexible workpiece in the workpiece holder while holding the flexible workpiece using an air cushion on each opposing planar surface of the flexible workpiece.

Transparent, electrically conductive layer, a process for producing the layer and its use, wherein the layer is based on at least one compound of the formula 1wherein the substituents are as defined.

The peeling of a reaction product deposition film 50 is prevented, reducing the particle contamination of a material to be treated 16 by roughening the surfaces (adhesion preventing surfaces) of an outer liner 40 and inner liner 42 both made of aluminum installed as an adhesion preventing plate inside a chamber of a plasma etching device to a surface roughness within a constant range without carrying out alumite treatment.

A method is provided for forming an amorphous carbon layer, deposited on a dielectric material such as oxide, nitride, silicon carbide, carbon doped oxide, etc., or a metal layer such as tungsten, aluminum or poly-silicon. The method includes the use of chamber seasoning, variable thickness of seasoning film, wider spacing, variable process gas flows, post-deposition purge with inert gas, and post-deposition plasma purge, among others, to make the deposition of an amorphous carbon film at low deposition temperatures possible without any defects or particle contamination.

A method and system is described for reducing particle contamination of a substrate in a deposition system. The deposition system comprises one or more particle diffusers disposed therein and configured to prevent or partially prevent the passage of film precursor particles, or break-up or partially break-up film precursor particles. The particle diffuser may be installed in the film precursor evaporation system, or the vapor delivery system, or the vapor distribution system, or two or more thereof.

The present invention is directed to aligning wafers within semiconductor fabrication tools. More particularly, one or more aspects of the present invention pertain to quickly and efficiently finding an alignment marking, such as an alignment notch, on a wafer to allow the wafer to be appropriately oriented within an alignment tool. Unlike conventional systems, the notch is located without firmly holding and spinning or rotating the wafer. Exposure to considerable backside contaminants is thereby mitigated and the complexity and / or cost associated with aligning the wafer is thereby reduced.

A system, method, and apparatus for mitigating contamination during ion implantation are provided. An ion source, end station, and mass analyzer positioned between the ion source and the end station are provided, wherein an ion beam is formed from the ion source and travels through the mass analyzer to the end station. An ion beam dump assembly comprising a particle collector, particle attractor, and shield are associated with the mass analyzer, wherein an electrical potential of the particle attractor is operable to attract and constrain contamination particles within the particle collector, and wherein the shield is operable to shield the electrical potential of the particle attractor from an electrical potential of an ion beam within the mass analyzer.

Disclosed is a die-bonding method having pick-and-probe features after wafer sawing where at least a die is probed and sorted according to different grades during a pick-and-place step performed after wafer sawing. A suction nozzle having a plurality of probes is utilized to probe the electrical terminals of the die. After picking, the suction nozzle is moved on a common moving path and the picked die is tested through the suction nozzle. The picked-and-probed die is moved and die-bonded to a die carrier loaded in a corresponding one of a plurality of die-bonding areas by moving the Suction nozzle on a chosen sorting path. Therefore, the die is probed and sorted during die-bonding processes. Higher graded dice at a same level are assembled on a same die carrier to form a higher graded semiconductor package.

An apparatus for measuring a temperature of a substrate is disclosed. The apparatus includes a phosphor material in thermal contact to the substrate, the phosphor material producing a fluorescent response in a first wavelength range when exposed to a electromagnetic radiation in a second wavelength range, the fluorescent response decaying at a decay rate that is related to a temperature of the phosphor material, and the phosphor material producing a first set of non volatile byproducts when exposed to a plasma. The apparatus also includes a barrier window positioned between the phosphor material and a plasma, wherein the barrier window allows at least a portion of the first wavelength and the second wavelength to be transmitted, and wherein the barrier window produces a second set of non volatile byproducts that is less than the first set of non volatile byproducts when exposed to the plasma, wherein when the electromagnetic radiation is transmitted to the phosphor material through the barrier window, the temperature is determined from the decay rate of the fluorescent response.

Techniques for a door system for sealing an opening between two chambers in a semiconductor processing system are described. The opening has at least one angled corner. The door system includes a door, actuator, and sealing member. The door is moveable in the plane and has at least one angled corner to align the door with the opening. The actuator moves the door to selectively open and close the opening. The sealing member seals the opening when the door is in a closed position. The door is sized to apply substantially uniform seal compression to the sealing member when in the closed position.

A method is disclosed for reducing particle contamination in an ion implantation system, wherein an ion beam is created via the ion source operating in conjunction with an extraction electrode assembly. A cathode voltage is applied to the ion source for generating ions therein, and a suppression voltage is applied to the extraction assembly for preventing electrons in the ion beam from being drawn into the ion source. The suppression voltage is selectively modulated, thereby inducing a current flow or an arc discharge through the extraction assembly to remove deposits on surfaces thereof to mitigate subsequent contamination of workpieces. An improvement to an ion implantation system is also disclosed in accordance with the foregoing, wherein a controller is configured to selectively modulate a voltage between a predetermined voltage and a predetermined suppression voltage generally concurrent with the transferring of the workpiece, thereby inducing a current flow or an arc discharge through the extraction electrode assembly to remove deposits on surfaces thereof to mitigate subsequent contamination of workpieces.

The present invention is directed to a beam control circuit and method used to minimize particle contamination in an ion implantation system by reducing the duty factor of the ion beam. In one embodiment the beam control circuit comprises a,high voltage switch connected in series with a power supply and an ion source portion of the ion implantation system, wherein the switch is operable to interrupt or reestablish a connection between the power supply and an electrode of the ion source including electrodes for plasma production. The beam control circuit also comprises a switch controller operable to control the duty factor of the ion beam by controlling the switch to close before a start of ion implantation and to open after a completion of implantation or at other times when the beam is not needed, thereby minimizing beam duty and particle contamination. The beam control technique may be applied to wafer doping implantation and duty factor reduction. Protection circuits for the high voltage switch absorb energy from reactive components and clamp any overvoltages.

The present invention is directed to a beam control circuit and method used to minimize particle contamination in an ion implantation system by reducing the duty factor of the ion beam. In one embodiment the beam control circuit comprises a high voltage switch connected in series with a power supply and an ion source portion of the ion implantation system, wherein the switch is operable to interrupt or reestablish a connection between the power supply and an electrode of the ion source including electrodes for plasma production. The beam control circuit also comprises a switch controller operable to control the duty factor of the ion beam by controlling the switch to close before a start of ion implantation and to open after a completion of implantation or at other times when the beam is not needed, thereby minimizing beam duty and particle contamination. The beam control technique may be applied to wafer doping implantation and duty factor reduction. Protection circuits for the high voltage switch absorb energy from reactive components and clamp any overvoltages.

A method for reducing wafer backside large particle contamination, comprising: performing front end of line processing of a memory device, depositing a thick oxide on the wafer backside so that at least pre-selected oxide thickness remains after back end of line processing is complete and performing the back end of line processing of the memory device.

A method for reducing wafer backside large particle contamination, comprising: performing front end of line processing of a memory device, depositing a thick oxide on the wafer backside so that at least pre-selected oxide thickness remains after back end of line processing is complete and performing the back end of line processing of the memory device.

The invention discloses an electrostatic chuck component. The electrostatic chuck component comprises an electrostatic chuck, a fixing frame and a temperature sensor. The fixing frame is mounted on the electrostatic chuck. The temperature sensor is arranged on the fixing frame and opposite to the upper surface of the electrostatic chuck, and the lower end face of the temperature sensor is at a preset distance with the upper surface of the electrostatic chuck. According to the electrostatic chuck component and by means of a non-contact temperature measuring method, the lower end face of the temperature sensor is spaced from the upper surface of the electrostatic chuck, particle pollution produced during temperature measuring is decreased, secondary pollution to the electrostatic chuck is avoided, and service life of the electrostatic chuck is prolonged; meanwhile, compared with a temperature measuring mode by a conventional handheld temperature gauge, the non-contact temperature measuring method has the advantages that the temperature sensor is fixed through the fixing frame, measuring error produced by handheld operation of an operator is avoided, and temperature measuring accuracy of the temperature sensor is improved. The invention further discloses a plasma device provided with the above electrostatic chuck component.