The invention provides an enhanced graphene waveguide photodetector for an integrally-distributed Bragg reflection grating. The photodetector is manufactured on an SOI substrate and comprises an optical waveguide, an insulating transparent thin film, a graphene thin film, a first metal electrode, a second metal electrode and a gate electrode window. The optical waveguide is formed on the substrate in the longitudinal direction. The insulating transparent thin film is evenly manufactured on the substrate and covers the optical waveguide. The graphene thin film is manufactured on the insulating transparent thin film and covers the middle of the strip-shaped optical waveguide. The first metal electrode is provided with a contact end and a strip-shaped electrode end, the contact end of the first metal electrode is manufactured on one side of the insulating transparent thin film, and the electrode end of the first metal electrode is longitudinally manufactured on the graphene thin film. The second metal electrode is provided with a contact end and a strip-shaped electrode end, the contact end of the second metal electrode is manufactured on one side of the insulating transparent thin film, and the electrode end of the second metal electrode is longitudinally manufactured on the graphene thin film. The gate electrode window is formed on the insulating transparent thin film and located on any exposed surface of the insulating transparent thin film. The graphene photodetector is integrated with the waveguide, a resonant cavity and the like, and the defect of low optical responsivity is overcome.