813results about How to "Low process temperature" patented technology

A CVD method is to form a silicon nitride film on a target substrate (W). The method includes heating the substrate (W) accommodated in a process container (8), at a process temperature, and supplying a process gas including hexaethylamino-disilane gas and ammonia gas onto the substrate (W) heated at the process temperature, thereby depositing a silicon nitride film on the substrate (W).

A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0.1-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.

The present invention relates to customized implants for bone replacement that are prepared from poly(ether ketone ketone) or PEKK, and to a computer-based imaging and rapid prototyping (RP)-based manufacturing method for the design and manufacture of these customized implants. The PEKK customized implants made using rapid prototyping demonstrate biomechanical properties similar (if not identical) to that of natural bone even when prepared without the use of processing aids such as carbon black and aluminum powder.

An insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding gas, and a third process gas containing a carbon hydride gas. This method includes repeatedly performing supply of the first process gas to the process field, supply of the second process gas to the process field, and supply of the third process gas to the process field. The supply of the third process gas includes an excitation period of supplying the third process gas to the process field while exciting the third process gas by an exciting mechanism.

An insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding gas or oxynitriding gas, a third process gas containing a boron-containing gas, and a fourth process gas containing a carbon hydride gas. A first step performs supply of the first process gas and a preceding gas, which is one of the third and fourth process gases, while stopping supply of the second process gas and a succeeding gas, which is the other of the third and fourth process gases. A second step performs supply of the succeeding gas, while stopping supply of the second process gas and the preceding gas. A third step performs supply of the second process gas while stopping supply of the first process gas.

Compositions and methods for making a pharmaceutical dosage form include making a pharmaceutical composition that includes one or more active pharmaceutical ingredients (API) with one or more pharmaceutically acceptable excipients by thermokinetic compounding into a composite. Compositions and methods of preprocessing a composite comprising one or more APIs with one or more excipients include thermokinetic compounding, comprising thermokinetic processing the APIs with the excipients into a composite, wherein the composite can be further processed by conventional methods known in the art, such as hot melt extrusion, melt granulation, compression molding, tablet compression, capsule filling, film-coating, or injection molding.

A method of forming a silicon nitride film which can form a silicon nitride film having a high film stress at a low process temperature is described herein. The method includes the steps of (a) supplying dichlorosilane into a reaction chamber containing a process object, thereby allowing chemical species originated from dichlorosilane as a precursor to be adsorbed on the process object; (b) hydrogenating chlorine contained in the chemical species, thereby removing the chlorine from the chemical species; and (c) supplying ammonia radicals into the reaction chamber, thereby nitriding the chemical species, from which the chlorine has been removed, by the ammonia radicals to, deposit resultant silicon nitride on the process object, wherein the steps (a), (b) and (c) are performed repeatedly for plural times in that order, thereby a silicon nitride film of a desired thickness is formed on a semiconductor wafer.

The present invention is directed to a method of making an inclusion complex comprising an acylated cyclodextrin host molecule and a guest molecule, wherein the method comprises the steps of: a) contacting the acylated cyclodextrin host molecule and the guest molecule to form an inclusion complex; and b) precipitating the inclusion complex in an aqueous medium. The present invention is further directed to an inclusion complex comprising an acylated cyclodextrin host molecule and a guest molecule, wherein the guest molecule comprises from about 2% (wt.) to about 15% (wt.) of the inclusion complex. Moreover, the present invention relates to a composition comprising a polymer and an inclusion complex, wherein the inclusion complex comprises an acylated cyclodextrin host molecule and a guest molecule and medical devices and solid pharmaceutical compositions comprised thereof.

A CVD method is to form a silicon nitride film on a target substrate (W). The method includes heating the substrate (W) accommodated in a process container (8), at a process temperature, and supplying a process gas including hexaethylamino-disilane gas and ammonia gas onto the substrate (W) heated at the process temperature, thereby depositing a silicon nitride film on the substrate (W).

The invention relates to a graphene / phosphoric acid iron-lithium composite material with a 'sandwich' structure and a preparation method thereof. The structure characteristics of the graphene / phosphoric acid iron-lithium composite material are that: blocky particles are formed by a grapheme laminated sheet which is completely coated by a phosphoric acid iron-lithium shell; and the insides of the particles present a similar 'sandwich' structure overlapped by a plurality of layers of phosphoric acid iron-lithium and graphene one by one. The preparation method thereof adopts a 'two-step' method. The characteristic steps are as follows: a graphene / phosphoric acid iron precursor with a 'sandwich' structure is compounded by a liquid phase method during the first step; then lithium is embedded in the second step; lithium iodide liquid phase low temperature reaction is adopted for embedding the lithium; then the graphene / phosphoric acid iron-lithium composite material is obtained through high temperature calcination under reducing (inertia) atmospheres; moreover, the graphene / phosphoric acid iron-lithium composite material can also be formed by the embedding of the lithium through high temperature solid phase reaction. The graphene / phosphoric acid iron-lithium composite material prepared by the method has high capacity and good charging-discharging circulating performances, and is suitable to be used as an anode material of a lithium ion battery.