Preparation method of perovskite solar cell with GaN semiconductor material as dual-function layer
A solar cell and perovskite technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, organic semiconductor devices, etc., to achieve high photoelectric conversion efficiency, improve photoelectric conversion efficiency, and increase light absorption rate
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Embodiment 1
[0038] A perovskite solar cell based on a porous GaN / n-GaN single crystal as a double functional layer, including a single crystal double functional layer cathode structure, a perovskite layer, a hole transport layer and a metal counter electrode layer from bottom to top. structured as figure 1 shown.
[0039] GaN semiconductor material is used as the preparation method of the perovskite solar cell of bifunctional layer, and the steps are as follows:
[0040] (1) The substrate of n-type GaN thin film grown on double-sided polished sapphire substrate by MOCVD method is cleaned in sequence with acetone, IPA and deionized water in an ultrasonic bath for 10 minutes; the substrate is placed in a high-temperature atmosphere furnace Perform high temperature annealing, the annealing gas is high-purity N 2 Gas, annealing temperature 1100°C, annealing time 30min, porous GaN / n-GaN single crystal is obtained after annealing; SEM image and contact angle test results of porous GaN / n-GaN s...
Embodiment 2
[0047] A method for preparing a GaN semiconductor material as a perovskite solar cell with a double functional layer, the steps are as follows:
[0048] (1) The substrate of n-type GaN thin film grown on double-sided polished sapphire substrate by MOCVD method is cleaned in sequence with acetone, IPA and deionized water in an ultrasonic bath for 10 minutes; the substrate is placed in a high-temperature atmosphere furnace Perform high temperature annealing, the annealing gas is high-purity N 2 Gas, annealing temperature 1150°C, annealing time 60min, porous GaN / n-GaN single crystal is obtained after annealing;
[0049] (2) Clean the porous GaN / n-GaN single crystal substrate in an ultrasonic bath with acetone, IPA and deionized water for 10 minutes, and then treat it with oxygen plasma for 15 minutes;
[0050] (3) in N 2 In the glove box, 100 mL of the perovskite precursor solution was spin-coated onto the porous GaN / n-GaN single wafer at a speed of 4000 rpm for 45 s, and then ...
Embodiment 3
[0055] A method for preparing a GaN semiconductor as a perovskite solar cell with a double functional layer, the steps are as follows:
[0056] (1) The substrate of n-type GaN thin film grown on double-sided polished sapphire substrate by MOCVD method is cleaned in sequence with acetone, IPA and deionized water in an ultrasonic bath for 10 minutes; the substrate is placed in a high-temperature atmosphere furnace Perform high temperature annealing, the annealing gas is high-purity N 2 Gas, annealing temperature 1120°C, annealing time 90min, porous GaN / n-GaN single crystal is obtained after annealing;
[0057] (2) Clean the porous GaN / n-GaN single crystal substrate in an ultrasonic bath with acetone, IPA and deionized water for 10 minutes, and then treat it with oxygen plasma for 15 minutes;
[0058] (3) in N 2 In the glove box, 100 mL of the perovskite precursor solution was spin-coated onto the porous GaN / n-GaN single wafer at a speed of 4000 rpm for 45 s, and then 200 mL of...
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