279results about How to "Improve light absorption" patented technology

The invention discloses metal graphene of a composite structure and a preparing method thereof. The metal graphene is composed of nano-porous gold of double-connection split-phase structure and a graphene film. The graphene film covers the nano-porous gold. The nano-porous gold structure can greatly enhance a surface electric field, so that interaction efficiency of the electric field and the graphene is improved, the composite structure can effectively improve light absorptivity of the graphene in a visible waveband, and therefore the metal graphene is widely applied to the field of photoelectric detectors based on graphene.

A method for forming a solar cell having a plasmonic back reflector is disclosed. The method includes the formation of a nanoimprinted surface on which a metal electrode is conformally disposed. The surface structure of the nanoimprinted surface gives rise to a two-dimensional pattern of nanometer-scale features in the metal electrode enabling these features to collectively form the plasmonic back reflector.

The invention discloses a silicon-avalanche photodetector (Si-APD) with black silicon as a photosensitive layer and a preparation method of the Si-APD with the black silicon as the photosensitive layer, and belongs to the field of photoelectric detection technology. The Si-APD comprises a silicon intrinsic substrate 1, an N<+> region 2, a P type region 3, an annular N type region 4, an N<+> region black silicon layer 5, a P<+> region 6, an upper electrode 7 and a lower electrode 8, wherein the N<+> region 2 is located in the middle of the upper surface of the silicon intrinsic substrate 1, the P type region 3 is located below the N<+> region, the annular N type region 4 is located on the periphery of the upper surface of the silicon intrinsic substrate, the N<+> region black silicon layer 5 is located on the upper surface of the N<+> region, the P<+> region 6 is located on the lower surface of the silicon intrinsic substrate, the upper electrode 7 is located on the upper surfaces of the N<+> region black silicon layer and the annular N type region, and the lower electrode 8 is located on the lower surface of the P<+> region. According to the Si-PAD, the black silicon material serves as the photosensitive layer, and meanwhile the annular N type region is additionally arranged on the peripheries of the N<+> region and the P type region. Thus, the Si-APD with the black silicon as the photosensitive layer can absorb light waves of a near-infrared band and have higher light absorptivity and a wider response wave band, the preparation technique is simple, the cost is low, and the Si-PAD has the advantages of being easy to integrate, quick in response speed, high in responsivity and wide in response wave band.

The invention provides a flexible thin-film solar photoelectric cell and a large-scale continuous automatic production method thereof. The solar photoelectric cell comprises an antireflection layer, a transparent upper electrode layer, an isolating layer, a window layer, a protective layer, an absorbing layer, a reflecting layer, a metal back electrode layer, an insulating layer, a substrate layer and a solder flux layer in sequence. The material of the antireflection layer is magnesium fluoride, the material of the transparent upper electrode layer is aluminum zinc oxide, the material of the isolating layer is intrinsic zinc oxide, the material of the window layer is zinc sulfide, the material of the protective layer is sulfur or zinc, the material of the absorbing layer is CIGS (copper indium gallium diselenide) or CIAS (copper indium aluminum diselenide), the material of the reflecting layer is aluminum, the material of the metal back electrode layer is copper-molybdenum-sodium alloy, the material of the insulating layer is titanium oxide, and the material of the substrate layer is stainless steel, copper, aluminum foil or polyimide film. The production method of the flexible thin-film solar photoelectric cell comprises sputtering layer by layer in a closed environment on a continuous automatic production line through a plurality of sputtering methods to form a multilayer structure. The large-scale continuous automatic production method provided by the invention has the advantages of high efficiency, high quality, and low cost.

The invention discloses a thermoelectric generator capable of effectively absorbing solar energy. A semiconductor thermoelectric power generation sheet assembly comprises an upper insulation heat-conduction plate I, a semiconductor thermoelectric device and a lower insulation heat-conduction plate II; the three are sequentially arranged from top to bottom; a carbon nano-particle film is attached to the upper surface of the upper insulation heat-conduction plate I; a cooling system is attached to the lower surface of the lower insulation heat-conduction plate II; and an insulation layer is arranged around the semiconductor thermoelectric power generation sheet assembly. The device is simple in structure and small in volume; when the sun as a heat source irradiates the carbon nano-particle film, due to the rough micro-surface and carbon nano-particles of different particle diameters, sunlight is nearly absorbed by the carbon nano-particle film completely; a radiator rapidly dissipates heat on the lower surface of the semiconductor thermoelectric power generation sheet assembly, so that a cold end is formed; after the cold and hot ends of the semiconductor thermoelectric power generation sheet based on the seebeck effect form a temperature difference, thermoelectromotive force is generated; electric energy is stably output; furthermore, the investment cost is low; the service lifeis long; and electricity generation is steady.

When a wavelength of a first laser beam with which a first recording medium including a first recording layer is recorded and reproduced is indicated as λ1 (nm), a wavelength of a second laser beam with which a second recording medium including a second recording layer is recorded and reproduced as λ2 (nm), the relationship between the wavelength λ1 and the wavelength λ2 is set to be expressed by 10≦|λ1−λ2|≦120. The first recording layer has a light absorptance ratio of at least 1.0 with respect to the wavelength λ1. The light transmittance of the first recording medium with respect to the wavelength λ2 is set to be at least 30 in both the cases where the recording layer is in a crystal state and in an amorphous state. In order to record and reproduce the optical multilayer disk with the above-mentioned characteristics, a multiwavelength light source with the following configuration is used. Wavelengths of fundamental waves with different wavelengths from injection parts formed at one end of a plurality of optical waveguides, which satisfy phase matching conditions different from one another and are formed in the vicinity of the surface of a substrate, are converted simultaneously, and the first and second laser beams are emitted from emission parts formed at substantially the same position at the other end of the optical waveguides. This enables an optimum optical system for high density recording and reproduction to be obtained.

This indium tin oxide powder has a median diameter of 30 nm to 45 nm and a D90 value of 60 nm or less in a particle size distribution. This method for producing an indium tin oxide powder includes, in series: a step (A) of coprecipitating an indium tin hydroxide by using a tin (Sn2+) compound under conditions where a pH is in a range of 4.0 to 9.3 and a liquid temperature is in a range of 5° C. or higher, wherein the indium tin hydroxide has a color tone ranging from bright yellow to color of persimmon in a dried powder state; a step (B) of drying and calcining the indium tin hydroxide, and thereby, obtaining indium tin oxide; and a step (C) of dry pulverizing the obtained indium tin oxide in a nitrogen atmosphere.

Systems and methods for plasmonic heating by combined use of thin plasmonic film-based 2D and 3D structures and a light-emitting diode (LED) for nucleic acids amplification through fast thermal cycling of polymerase chain reaction (PCR) are described.

The invention provides a laser machining method and device for a wafer. The method comprises that at least two laser beams having different energy distribution respectively execute a hacking process and a grooving process on a predetermined cutting path on the upper surface of the wafer in sequence and are used for forming a groove in the predetermined cutting path on the upper surface of the wafer. The predetermined cutting path on the upper surface of the wafer can be hacked by the laser beams with lower energy, the surface of the predetermined cutting path is roughened to improve a light absorptivity, which is convenient for preparation for a subsequent machining process, and the wafer is prevented from being damaged by stripping of a Low-K material caused by a fact that a Low-K layer on the surface of the wafer is machined by adopting the laser beams with over high energy; and meanwhile, the control precision on the energy of the laser beams in a subsequent machining process is higher, and further a laser machining effect of the upper surface of the wafer is improved.

The invention discloses a photoelectric detector, and the photoelectric detector comprises an absorption layer, a metal layer, a dielectric film and reflective metal, which are sequentially arranged from a bottom layer to a top layer. The absorption layer is used for absorbing target detection light. The metal layer comprises a strip-shaped grating and an upper contact electrode, and one side of the strip-shaped grating is located on the absorption layer, and the strip-shaped grating is used for gathering target detection light, and the upper contact electrode is electrically connected with alower contact electrode through a voltage. One side of the dielectric film is located above the other side of the strip-shaped grating, and the other side of the dielectric film is located below the reflective metal. The dielectric film is used for providing a cavity of the resonant cavity, and the reflective metal is used for reflecting target detection light. The invention also provides a preparation method of the photoelectric detector. According to the invention, a transverse resonant cavity effect and a longitudinal resonant cavity effect can be formed at the same time through the strip-shaped grating and the reflecting metal, and the higher light absorption rate is obtained in a thin absorption region. Moreover, the structure of the detector is simpler than the structure of a resonant cavity resonance detector, and the manufacturing cost is reduced.