222 results about "Laser energy density" patented technology

The invention relates to a laser ablation method for patterning thin film layers for thick dielectric electroluminescent displays without substantial ablation of or damage to any other layers. Typically, the thin film layers are phosphor layers. The laser ablation method for patterning a thin film phosphor layer of a thick dielectric electroluminescent display includes selecting a wavelength of laser radiation, a laser pulse length, a laser energy density and a sufficient number of laser pulses to pattern the thin film phosphor layer without substantial ablation of or damage to other layers, whereby the wavelength of laser radiation is such that the laser radiation is substantially absorbed by the thin film phosphor layer with minimal absorption by other layers, the laser pulse length is sufficiently short that during the duration of the laser pulse there is minimal heat flow from the thin film phosphor layer to other layers, and the laser energy density and the sufficient number of laser pulses is sufficiently high that energy is deposited in the thin film phosphor layer, whereby the entire thickness of at least a portion of the thin film phosphor layer is ablated.

First laser light is irradiated (energy density of 400 to 500 mj / cm2) to a semiconductor film 102 in an atmosphere containing oxygen in order to obtain a semiconductor film 102b having large depressions and projections on the surface. Then, an oxidized film 105a formed by the irradiation of the first laser light is removed. After that, an inert gas with an oxygen density of 10 ppm or below is blown thereto, and, at the same time, second laser light is irradiated thereto (the energy density is higher than that of the irradiation of the first laser light). Thus, the surface of the semiconductor film 102b is flattened, and a semiconductor film 102c having fewer depressions and projections on the surface can be obtained.

The invention discloses an optical film defect laser damage threshold test method. According to the method, after a laser beam passes through an attenuator and arrives at a beam splitter, and the laser beam in the transmission direction of the beam splitter passes through a focusing lens and arrives at a metal film; a CCD camera records a spot position where the laser irradiates on the surface ofthe metal film and a laser damage point coordinate where the laser irradiates on the surface of the optical film; and a scanning electron microscope records the longitudinal depth position of the defect damage point of the optical film in the irradiation of the laser and completes a defect damage point lateral energy density subdivision and longitudinal electric field normalization processing-combined analysis. In an optical film defect laser damage threshold test in the prior art, randomly-distributed defect damage points and laser energy density of Gaussian distribution in a laser spot are considered to be uniformly-distributed damage points and laser energy density equivalently, and influence on the defect damage point caused by the electric field distribution of the optical film is ignored, and as a result, many problems are brought about, while with the optical film defect laser damage threshold test method of the invention adopted, the above problems can be solved, and test accuracy can be improved.