436 results about "Binary alloy" patented technology

A novel method for preparing fine particles comprising a transition metal and a noble metal which are monodispersed and have almost no particle diameter distribution, and are transferable to a CuAu-I type L10 ordered phase, with safety and at a low cost, wherein a salt or a complex of at least one transition metal selected from Fe and Co and a salt or a complex of at least one transition metal selected from Pt and Pd (exclusive of the combination of Co—Pd) is dissolved in an organic solvent miscible with water or an alcohol in the presence of an organic protecting agent, and the resultant solution is heated under reflux in the presence of an alcohol in an inert atmosphere, to thereby prepare a binary alloy comprising a transition metal and a noble metal, or a salt or a complex of at least one element selected from the group consisting of Cu, Bi, Sb, Sn, Pb and Ag is further dissolved in the above solvent and the resultant solution is heated under reflux in the presence of an alcohol in an inert atmosphere, to thereby prepare a ternary alloy comprising a transition metal, a noble metal and an additional element.

The invention discloses thermal interface materials and a manufacturing method of the thermal interface materials. The interface materials are formed by means of heating and oxidization of metals such as gallium, indium, mercury, sodium, potassium, cesium or binary alloy and multicomponent alloy of the cesium. The manufacturing method comprises the following steps: selecting metals such as the gallium, the indium, the mercury, the sodium, the potassium, the cesium or the binary alloy and the multicomponent alloy of the cesium, and enabling the metals or the alloy to become liquid and enabling the liquid metals or the alloy to be placed in air or oxygen through heating. By means of placing the metals such as the gallium, the indium, the mercury, the sodium, the potassium, the cesium or the binary alloy and the multicomponent alloy of the cesium in the air and the oxygen to be oxidized to form the thermal interface materials, wettability between metal-based fluid and each interface can be greatly enhanced, thereby requirements of the thermal interface materials can be met. Due to the good thermal and wetting properties, the thermal interface materials can play significant roles in an aspect of electric chip thermal conductivity of the fields such as cryogenic engineering, boosters of computers, satellites and rockets and laser device.

A quantum-well infrared photodetector (QWIP) is presented. The photodetector includes a substrate, a buffer layer, a first conductive layer, a multiple quantum well, an optional blocking layer, and a second conductive layer. Substrate is composed of a monocrystal which may be removed after fabrication. Remaining layers are composed of group III-V nitrides, including binary, ternary, and quaternary compositions. Alternate embodiments of the present invention include a doped binary alloy along first and second conductive layers, a binary alloy along buffer and blocking layers, and alternating alloys of binary, ternary and quaternary compositions within the multiple quantum well. The present invention responds to infrared light at normal and oblique incidences, from near infrared to very far infrared.

There is disclosed medical devices, such as stents, guidewires and embolic filters, comprising a binary alloy of titanium and one binary element selected from platinum, palladium, rhodium, and gold. There is also disclosed a radiopaque marker comprising the disclosed binary alloy, as well as medical devices having the radiopaque marker attached thereto. Methods of attaching the radiopaque marker to the medical devices, such as by welding, are also disclosure also disclosed.

This invention relates to a method for producing group IB-IIA-VIA quaternary or higher alloy semiconductor films wherein the method comprises the steps of (i) providing a metal film comprising a mixture of group IB and group IIIA metals; (ii) heat treating the metal film in the presence of a source of a first group VIA element (said first group VIA element hereinafter being referred to as VIA1) under conditions to form a first film comprising a mixture of at least one binary alloy selected from the group consisting of a group IB-VIA1 alloy and a group IIIA-VIA1 alloy and at least one group IB-IIIA-VIA1 ternary alloy (iii) optionally heat treating the first film in the presence of a source of a second group VIA element (said second group VI element hereinafter being referred to as VIA2) under conditions to convert the first film into a second film comprising at least one alloy selected from the group consisting of a group IB-VIA1-VIA2 alloy and a group IIIA-VIA1-VIA2 alloy; and the at least one group IB-III-VIA1 ternary alloy of step (ii); (iv) heat treating either the first film or second film to form a group IB-IIIA-VIA quaternary or higher alloy semiconductor film.

A method for manufacturing a Co-base sintered alloy sputtering target for the formation of a magnetic recording film including providing a Cr—Co alloy powder consisting of 50 to 70 atomic % of Cr and remaining Co, a Pt powder, a non-magnetic oxide powder, and a Co powder, blending and mixing the powders together so as to give the chemical composition consisting of 2 to 15 mol % of a non-magnetic oxide, 3 to 20 mol % of Cr, and 5 to 30 mol % of Pt and a remainder containing Co, and sintering the mixture under pressure. Or alternatively providing a Pt—Cr binary alloy powder consisting of 10 to 90 atomic % of Pt and remaining Cr, a Pt powder, a non-magnetic oxide powder, and a Co powder, blending and mixing the powders so as to give the chemical composition above, and then sintering the mixture under pressure.

A quantum-well infrared photodetector (QWIP) is presented. The photodetector includes a substrate, a buffer layer, a first conductive layer, a multiple quantum well, an optional blocking layer, and a second conductive layer. Substrate is composed of a monocrystal which may be removed after fabrication. Remaining layers are composed of group III-V nitrides, including binary, ternary, and quaternary compositions. Alternate embodiments of the present invention include a doped binary alloy along first and second conductive layers, a binary alloy along buffer and blocking layers, and alternating alloys of binary, ternary and quaternary compositions within the multiple quantum well. The present invention responds to infrared light at normal and oblique incidences, from near infrared to very far infrared.