81 results about "Tetramethylammonium" patented technology

Sulfonate salts have the formula: CF3—CH(OCOR)—CF2SO3−M+ wherein R is C1-C20 alkyl or C6-C14 aryl, and M+ is a lithium, sodium, potassium, ammonium or tetramethylammonium ion. Onium salts, oximesulfonates and sulfonyloxyimides and other compounds derived from these sulfonate salts are effective photoacid generators in chemically amplified resist compositions.

Sulfonate salts have the formula: R1COOCH2CH2CF2CF2SO3−M+ wherein R1 is alkyl, aryl or hetero-aryl, M+ is a Li, Na, K, ammonium or tetramethylammonium ion. Onium salts, oxime sulfonates and sulfonyloxyimides derived from these salts are effective photoacid generators in chemically amplified resist compositions.

Sulfonate salts have the formula: HOCH2CH2CF2CF2SO3−M+ wherein M+ is a Li, Na, K, ammonium or tetramethylammonium ion. Onium salts, oxime sulfonates and sulfonyloxyimides derived from these salts are effective photoacid generators in chemically amplified resist compositions.

Sulfonate salts have the formula:CF3—CH(OCOR)—CF2SO3−M+ wherein R is C1-C20 alkyl or C6-C14 aryl, and M+ is a lithium, sodium, potassium, ammonium or tetramethylammonium ion. Onium salts, oximesulfonates and sulfonyloxyimides and other compounds derived from these sulfonate salts are effective photoacid generators in chemically amplified resist compositions.

A film comprising a crystalline halide perovskite composition having the following formula:AMX3   (1)wherein: A is an organic cation selected from the group consisting of methylammonium, tetramethylammonium, formamidinium, and guanidinium; M is at least one divalent metal; and X is independently selected from halide atoms; wherein the crystalline film of the halide perovskite composition possesses at least one of an average grain size of at least 30 microns, substantial crystal orientation evidenced in an ordering parameter of at least 0.6, and a level of crystallinity of at least 90%. Methods for producing films of these halide perovskite compositions using ionic liquids instead of volatile organic solvents are also described herein.

The invention discloses a method for preparing electronic grade tetramethylammonium hydroxide by a continuous method. The method comprises the following steps of: sequentially dividing an electrolytic cell into a cathode chamber, a first cathode middle chamber, a second cathode middle chamber and an anode chamber, wherein the two adjacent chambers are partitioned by a cation exchange membrane and connected by using a circulating pump and a filter connected in series, and the anode chamber is connected with the circulating pump and the filter connected in series; putting a 5 to 50 percent aqueous solution of a tetramethyl ammonium salt into the anode chamber, wherein (CH3)4N<+>, H<+> and metal cation R<+> in the solution enter the two cathode middle chambers and the cathode chamber through the cation exchange membranes; and removing the sediment generated by partial metal cation R<+> and OH<-> by using the filter, pumping the filtrate for reaction by using the circulating pump, and discharging the 5 to 30 percent tetramethylammonium hydroxide from the cathode chamber, wherein the concentration of each metal ion is less than 10ppb, the concentration of each anion is less than 500ppb, and the tetramethylammonium hydroxide has high purity. The current efficiency of the tetramethylammonium hydroxide is 70 to 80 percent, the tetramethylammonium hydroxide has high utilization rate, and the method has no pollution and can be used for large-scale production.

A process for depositing porous silicon oxide-based films using a sol-gel approach utilizing a precursor solution formulation which includes a purified nonionic surfactant and an additive among other components, where the additive is either an ionic additive or an amine additive which forms an ionic ammonium type salt in the acidic precursor solution. Using this precursor solution formulation enables formation of a film having a dielectric constant less than 2.5, appropriate mechanical properties, and minimal levels of alkali metal impurities. In one embodiment, this is achieved by purifying the surfactant and adding ionic or amine additives such as tetraalkylammonium salts and amines to the stock precursor solution. In some embodiments, the ionic additive is a compound chosen from a group of cationic additives of the general composition [NR(CH3)3]+A−, where R is a hydrophobic ligand of chain length 1 to 24, including tetramethylammonium and cetyltrimethylammonium, and A− is an anion, which may be chosen from the group consisting essentially of formate, nitrate, oxalate, acetate, phosphate, carbonate, and hydroxide and combinations thereof. Tetramethylammonium salts, or more generally tetraalkylammonium salts, or tetraorganoammonium salts or organoamines in acidic media are added to surfactant templated porous oxide precursor formulations to increase the ionic content, replacing alkali ion impurities (sodium and potassium) removed during surfactant purification, but which are found to exhibit beneficial effects in promoting the formation of the resulting dielectric.

In a dye-sensitized photovoltaic device including a semiconductor fine particle layer 2 on which a sensitizing dye is adsorbed, a counter electrode 3, and an electrolyte layer 4 between the electrodes, a molecule having a plurality of acid functional groups for adsorption onto the semiconductor electrode is used as a molecule of the sensitizing dye, and part of the acid functional groups is neutralized with an alkaline compound which is a hydroxide of at least one metal or compound selected from the group consisting of Li, Na, K, tetramethylammonium, tetraethyl ammonium, tetrapropyl ammonium, tetrabutyl ammonium, an imidazolium compound, and a pyridinium compound. In this manner, a dye-sensitized photovoltaic device that can achieve high photoelectric conversion efficiency even in the cases where a dye containing readily aggregating acid functional groups, such as carboxylic acid, as the adsorbing groups is used. A method for making the device is also provided.

Sulfonate salts have the formula: R1SO3—CH(Rf)-CF2SO3−M+ wherein R1 is alkyl or aryl, Rf is H or trifluoromethyl, and M+ is a Li, Na, K, ammonium or tetramethylammonium ion. Onium salts, oximesulfonates and sulfonyloxyimides and other compounds derived from these sulfonate salts are effective photoacid generators in chemically amplified resist compositions.

Sulfonate salts have the formula: CF3—CH(OH)—CF2SO3−M+ wherein M+ is a Li, Na, K, ammonium or tetramethylammonium ion. Because of inclusion within the molecule of a hydroxyl group which is a polar group, the sulfonic acids are effective for restraining the length of acid diffusion through hydrogen bond or the like. The photoacid generators that generate these sulfonic acids perform well during the device fabrication process including coating, pre-baking, exposure, post-exposure baking, and developing steps. The photoacid generators are little affected by water left on the wafer during the ArF immersion lithography.

The invention relates to nano polishing solution for chemically mechanical polishing of vanadium oxide, which consists of a nano-abrasive, a pH regulator, a surfactant, a defoaming agent, a bactericide, a cleaning aid and a solvent, wherein the nano-abrasive is zirconium oxide, titanium oxide, plutonium oxide or silica; the pH regulator comprises inorganic base of KOH and organic base of tetramethylammonium, tetraethyl ammonium hydroxide or hydroxy amine; the surfactant is silicane polyethylene glycol ether, polyethylene glycol ether or 2-(2-dodecyloxyethoxy)ethanol; the defoaming agent is poly(dimethylsilane); the bactericide is isomerous thiazolidinone; the cleaning aid is isopropanol; and the solvent is deionized water. The invention has the advantages that: the polishing rate is stably controllable, the damage is low, the cleaning is simple, equipment is not corroded, the environment is not polluted, and the storage time is long; and a vanadium oxide film material is subjected to the chemically mechanical polishing by the nano polishing solution for preparing a resistive random access memory, and the method is simple and practicable, and is completely compatible with an integrated circuit process.

Sulfonate salts have the formula:R1SO3—CH(Rf)—CF2SO3−M+wherein R1 is alkyl or aryl, Rf is H or trifluoromethyl, and M+ is a Li, Na, K, ammonium or tetramethylammonium ion. Onium salts, oximesulfonates and sulfonyloxyimides and other compounds derived from these sulfonate salts are effective photoacid generators in chemically amplified resist compositions.

The invention discloses a manganese dioxide composite material of amino intercalation and making method of planar assembly, wherein the chemical composition of composite material is (A<+>)a(Amino+)bMnO2mH2O ( A<+> is inorganic or organic cation, such as one, two or three of sodium ion, hydrogen ion and tetramethyl ammonium ion; Amino is one of L- lysine, L- arginine and L-histidine; a and b is the quantity of A<+> and Amino<+> separately; a+b<=0.4; m is the quantity of crystallinic water; 0.1 and A<+> in the middle; the stratified structure Delta-MnO2 is prepared by hot water, which is stripped by tetramethyl ammonium hydroxide to form plywood with negative electricity; the plywood and amino cation are self-assembly by electrostatic action, which produces the composite material of intercalation-structured amino acid-manganese dioxide. The invention possesses potential appliance value in the chiral catalysis, electrochemical catalysis and electrochemical biological sensor domain.

The invention discloses a method for enhancing the high temperature resistance and low temperature resistance of an aluminum electrolytic capacitor, which includes the preparation of an electrolyte, and the electrolyte includes the following raw materials in parts by weight: main solvent: 48-80%; auxiliary solvent: 10-32%, solute : 15-30%, additives: 0.3-3.2%, wherein, the solvent composed of the main solvent and the auxiliary solvent is a liquid with low saturated vapor pressure; the solute is tetramethylammonium maleate, ammonium adipate, triethylamine, One or more of 1,2-dimethylimidazolium phosphoric acid and phosphorous acid. Due to the selection of solvents with low saturated vapor pressure, the ratio of solutes is increased to ensure that the electrolyte does not condense at low temperature and the solutes do not precipitate; adding hydrogen absorbing agents and water suppressing agents reduces the internal pressure of the product; adding inhibitors and low leakage agents, The occurrence of high-temperature characteristic defects such as too fast recovery of electric leakage is prevented; the invention can also effectively ensure the low-temperature stability of the electrolyte, and provide guarantee for the stable operation of the LED driving power supply.

The invention is an electrochemical capacitor with its electrodes made on a conducting substrate with a layer of a redox polymer of the poly[Me(R-Salen)] type deposited onto the substrate. Me is a transition metal (for example, Ni, Pd, Co, Cu, Fe), R is an electron-donating substituent (for example, CH3O—, C2H5O—, HO—, —CH3), Salen is a residue of bis(salicylaldehyde)-ethylendiamine in Schiff's base. The electrolyte comprises of an organic solvent, compounds capable of dissolving in such solvents with the resulting concentration of no less than 0.01 mol / l and dissociating with the formation of ions, which are electrochemically inactive within the range of potentials from −3.0 V to +1.5 V (for example, salts of tetramethyl ammonium, tetrapropyl ammonium, tetrabutyl ammonium), and a dissolved metal complex [Me(R-Salen)]. The method of using the capacitor contemplates periodically alternating the connection polarity of the electrodes, causing the electrochemical characteristics of the electrodes to regenerate.

Sulfonate salts have the formula: CF3—CH(OH)—CF2SO3−M+ wherein M+ is a Li, Na, K, ammonium or tetramethylammonium ion. Because of inclusion within the molecule of a hydroxyl group which is a polar group, the sulfonic acids are effective for restraining the length of acid diffusion through hydrogen bond or the like. The photoacid generators that generate these sulfonic acids perform well during the device fabrication process including coating, pre-baking, exposure, post-exposure baking, and developing steps. The photoacid generators are little affected by water left on the wafer during the ArF immersion lithography.

The invention relates to a process for producing silicon rubber by using waste silicon rubber materials, which comprises the following steps: preparing dimethylsilane by using the waste silicon rubbermaterials through splitting, base-catalysed rearrangement, and discoloration and filtration of active carbon; and then placing the dimethylsilane, end-capping agent and tetramethylammonium hydroxideinto a kettle to prepare the silicon rubber. The process for producing silicon rubber by using waste silicon rubber materials comprises two additional process flows: 1) refining silicon dioxide from chemical waste residues generated in the process of preparing the silicon dioxide; and 2) finely preparing baking-free bricks by further utilizing the waste residues generated in the process of preparing the silicon dioxide, and adding coal ash, quartz sands, cement and rock sands into the waste residues. The process for producing silicon rubber by using waste silicon rubber materials prepares thesilicon dioxide and the baking-free bricks by using the waste silicon rubber materials, thereby having environmental protection value.

The invention discloses a preparation method of nickel-catalyzed trifluoromethyl diaryliodonium. The method comprises the following steps of mixing aryl halide, trifluoromethyl selenium-based tetramethyl ammonium, a nickel catalyst and an organic phosphine ligand or dipyridyl compound, reacting at -80 DEG C to 10 DEG C for 5min to 48h, separating and purifying to obtain the trifluoromethyl diaryliodonium. The aryl halide comprises an antidepressant moclobemide or fenofibrate for treating adult hyperlipidaemia. The preparation method is available in raw materials, mild in condition, good in reaction selectivity, high in yield, good in functional group compatibility, wide in substrate application range (suitable for aryl chloride), low in demands on instruments and equipment and simple in technological operation.

The present invention provides an ionic liquid or plastic crystal comprising anions and cations, said anions including [C(SO2F)3]- and said cations including at least one type selected from the group consisting of 1-ethyl-3-methylimidazolium ([EMI]+), N,N-diethyl-N-methyl-(2-methoxyethyl ) ammonium ([DEME]+), N-methyl-N-propylpyrrolidinium ([Py13]+), N-methyl-N-propylpiperidinium ([PP13]+), tetramethylammonium ([N1111]+), tetraethylammonium ([N2222]+), triimethyl hexyl ammonium ([N6111]+), triethylhexylammonium ([N6222]+), N-methyl-N-ethylpyrrolidinium ([Py12]+), 1-butyl-3-methylimidazolium ([C4mim]+), and 1-hexyl-3-methylimidazolium ([C6mim]+).

The present invention provides an ionic liquid or plastic crystal comprising an anion and a cation, the anion comprising [C(SO2F)3]−, and the cation comprising at least one member selected from the group consisting of 1-ethyl-3-methylimidazolium ([EMI]+), N,N-diethyl-N-methyl-(2-methoxyethyl)ammonium ([DEME]+), N-methyl-N-propylpyrrolidinium ([Py13]+), N-methyl-N-propylpiperidinium ([PP13]+), tetramethylammonium ([N1111]+), tetraethylammonium ([N2222]+), trimethylhexylammonium ([N6111]+), triethylhexylammonium ([N6222]+), N-methyl-ethylpyrrolidinium ([Py12]+), 1-butyl-3-methylimidazolium ([C4mim]+), and 1-hexyl-3-methylimidazolium ([C6mim]+).

A perovskite material including an organic-inorganic perovskite structure of formula (I), AnMX3 (I), n being the number of cation A and an integer >4, A being a monovalent cation selected from inorganic cations Ai and / or from organic cations Ao, M being a divalent metal cation or a combination thereof, X being a halide and / or pseudohalide anion or a combination thereof, wherein at least one cation A is selected from organic cations Ao, the inorganic cations Ai are independently selected from Li+, Na+, K+, Rb30, Cs+, or Tl+ and the organic cations Ao are independently selected from ammonium (NH4+), methyl ammonium (MA) (CH3NH3+), ethyl ammonium (CH3CH2NH3)+, formamidinium (FA) (CH(NH2)2+), methylformamidinium (CH3C(NH2)2+), guanidium (C((NH)2)3+), tetramethylammonium ((CH3)4N+), dimethylammonium ((CH3)2NH230) or trimethylammonium ((CH3)3NH+).

In a dye-sensitized photovoltaic device including a semiconductor fine particle layer 2 on which a sensitizing dye is adsorbed, a counter electrode 3, and an electrolyte layer 4 between the electrodes, a molecule having a plurality of acid functional groups for adsorption onto the semiconductor electrode is used as a molecule of the sensitizing dye, and part of the acid functional groups is neutralized with an alkaline compound which is a hydroxide of at least one metal or compound selected from the group consisting of Li, Na, K, tetramethylammonium, tetraethylammonium, tetrapropylammonium, tetrabutylammonium, an imidazolium compound, and a pyridinium compound. In this manner, a dye-sensitized photovoltaic device that can achieve high photoelectric conversion efficiency even in the cases where a dye containing readily aggregating acid functional groups, such as carboxylic acid, as the adsorbing groups is used. A method for making the device is also provided.

The invention relates to a synthetic method of octakis (acetylenyl dimethyl siloxane) polysilsesquioxane. The synthetic method comprises the steps that (1) 1,3-acetylene-1,1,3,3-tetramethyldisiloxane is synthesized by Grignard reaction; (2) 1,3-acetylene-1,1,3,3-tetramethyldisiloxane is hydrolyzed to obtain ethinyl dimethyl silicon alcohol, and a chloridizing agent is used for chloridizing silicon hydroxyl to obtain acetenyl dimethylchlorosilane; (3) tetraethoxysilane is used, hydrolytic condensation is performed under an alkaline condition provided by tetramethylammonium hydroxide, and octamer tetramethylammonium silicate is obtained; (4) the octamer tetramethylammonium silicate and the acetenyl dimethylchlorosilane react to obtain the octakis (acetylenyl dimethyl siloxane) polysilsesquioxane. The prepared octakis (acetylenyl dimethyl siloxane) polysilsesquioxane has end alkynyl and excellent high temperature resistance and high reactivity, and can be used for preparing nanometer POSS (polyhedral oligomeric silsesquioxane) materials; the octakis(acetylenyl dimethyl siloxane)polysilsesquioxane can be applied in spatial and medical functional materials and the like and has an excellent development and application prospect.

The invention provides a wicker curing agent and a preparation method thereof. The wicker curing agent mainly comprises polyacrylamide, methylbenzene, glycerol, liquid-state low-molecular-weight polyamide, ethylene thiourea, epoxy resin, tetramethylammonium thiuram tetrasulfide, polylactic acid, calcined kaoline, epoxy chloropropane, pullulan, nanometer silicon dioxide, zinc stearate, carbon black, ethyl silicon oil, calcium carbonate, glutaraldehyde, octadecanol, chloromethyloxirane, silica gel vulcanized agents, modified epoxy resin, isoamyl alcohol, isobutyl alcohol, castor oil polyoxylethylene ether, sodium dodecylbenzene sulfonate, ash, urea, potassium chloride, sucrose, peanuts, dried mushroom, forage, fresh milk, cold water, boiled water, rhubarb, magnoliae officinalis cortex, fructus aurantii, titanium dioxide, radix aucklandiae, popcorns, maltose, pitted red dates, talcum powder and ginger juice. A reinforcing agent prepared through the method is good in reinforcing effect, free of corrosion and capable of enhancing the strength and toughness of softened parts.

In etching processing of silicon, in particular anisotropic etching processing of silicon in a manufacturing step of MEMS parts, an etchant having a long life of etchant and an etching method are provided by suppressing a lowering of an etching rate at the time of warming which is characteristic of a hydroxylamine-containing etchant.A silicon etchant for anisotropically dissolving monocrystalline silicon therein, which is an alkaline aqueous solution containing (A) tetramethylammonium hydroxide, (B) hydroxylamine and (C) carbon dioxide (CO2) and / or a carbonic acid salt of tetramethylammonium and having a pH of 13 or more, and an etching method of silicon using this etchant are provided.

The invention discloses a method for using ion exchange resins to process tetramethylammonium carbonate. The method comprises the following steps that: after the resins are activated by acids, acid and alkali resistant resins which are not dissolved in water are used for processing a tetramethylammonium carbonate water solution, and the content of a single metallic ion in the tetramethylammonium carbonate water solution is reduced to ppm level through ion exchange and absorption of metallic irons in the solution; and the processed resins are regenerated through acid treatment and can be recycled. The method can realize high-efficiency and energy-saving removal of the metallic ions, with high absorption rate; and the ion exchange resins are easy to regenerate and are recycled, thereby the cost is saved.

Described herein is an ink solution, comprising a composition of formula (I): ABX3 (I), wherein A comprises at least one cation selected from the group consisting of methylammonium, tetramethylammonium, formamidinium, cesium, rubidium, potassium, sodium, butylammonium, phenethylammonium, phenylammonium, and guanidinium; B comprises at least one divalent metal; and X is at least one halide; and a mixed solvent system comprising two or more solvents selected from the group consisting of dimethyl sulfoxide, dimethylformamide, gamma-butyrolactone, 2-methoxyethanol, and acetonitrile. Methods for producing polycrystalline perovskite films using the ink solutions described herein and the use of the films in photovoltaic and photoactive applications are additionally described.