459 results about "Dielectric membrane" patented technology

A method for forming a film on a patterned surface of a substrate by atomic layer deposition (ALD) processing includes: adsorbing onto a patterned surface a first precursor containing silicon or metal in its molecule; adsorbing onto the first-precursor-adsorbed surface a second precursor containing no silicon or metal in its molecule; exposing the second-precursor-adsorbed surface to an excited reactant to oxidize, nitride, or carbonize the precursors adsorbed on the surface of the substrate; and repeating the above cycle to form a film on the patterned surface of the substrate.

A silicon dioxide-based dielectric layer is formed on a substrate surface by a sequential deposition/anneal technique. The deposited layer thickness is insufficient to prevent substantially complete penetration of annealing process agents into the layer and migration of water out of the layer. The dielectric layer is then annealed, ideally at a moderate temperature, to remove water and thereby fully densify the film. The deposition and anneal processes are then repeated until a desired dielectric film thickness is achieved.

A method for forming a dielectric film in a trench on a substrate by plasma-enhanced atomic layer deposition (PEALD) performs one or more process cycles, each process cycle including: (i) feeding a silicon-containing precursor in a pulse; (ii) supplying a hydrogen-containing reactant gas at a flow rate of more than about 30 sccm but less than about 800 sccm in the absence of nitrogen-containing gas; (iii) supplying a noble gas to the reaction space; and (iv) applying RF power in the presence of the reactant gas and the noble gas and in the absence of any precursor in the reaction space, to form a monolayer constituting a dielectric film on a substrate at a growth rate of less than one atomic layer thickness per cycle.

A method of forming a dielectric film having Si—C bonds and/or Si—N bonds on a semiconductor substrate by cyclic deposition, includes: (i) conducting one or more cycles of cyclic deposition in a reaction space wherein a semiconductor substrate is placed, using a Si-containing precursor and a reactant gas; and (ii) before or after step (i), applying a pulse of RF power to the reaction space while supplying a rare gas and a treatment gas without supplying a Si-containing precursor, whereby a dielectric film having Si—C bonds and/or Si—N bonds is formed on the semiconductor substrate.

Methods of patterning low-k dielectric films are described. For example, a method includes forming and patterning a mask layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. Exposed portions of the low-k dielectric layer are modified with a plasma process. The modified portions of the low-k dielectric layer are removed selective to the mask layer and unmodified portions of the low-k dielectric layer.

A method of forming a dielectric film having at least Si—N, Si—C, or Si—B bonds on a semiconductor substrate by atomic layer deposition (ALD), includes: supplying a precursor in a pulse to adsorb the precursor on a surface of a substrate; supplying a reactant gas in a pulse over the surface without overlapping the supply of the precursor; reacting the precursor and the reactant gas on the surface; and repeating the above steps to form a dielectric film having at least Si—N, Si—C, or Si—B bonds on the substrate. The precursor has at least one Si—C or Si—N bond, at least one hydrocarbon, and at least two halogens attached to silicon in its molecule.

A method for forming a dielectric film containing a Si—O bond a trench formed in an upper surface of a substrate, includes: designing a topology of a final dielectric film containing a Si—O bond formed in the trench by preselecting a target portion to be selectively removed relative to a non-target portion of an initial dielectric film resulting in the final dielectric film; conformally depositing the initial dielectric film on the upper surface and in the trench; and relatively increasing an amount of impurities contained in the target portion of the initial dielectric film relative to an amount of impurities contained in the non-target portion of the initial dielectric film to obtain a treated dielectric film, thereby giving the target portion and the non-target portion different chemical resistance properties when subjected to etching.

Methods of forming structures having dielectric films with improved properties, such as, for example, improved elastic modulus and/or dielectric constant are disclosed. Exemplary films can be formed using a cyclic deposition process. Exemplary methods use activated species to cleave (e.g., symmetric-structured) precursor molecules to form the high quality dielectric layers.

An anode (14, 208, 410) and/or cathode (12, 212, 420) of a capacitor has a large surface area. The high surface area of the anode is provided by forming the anode from a thin, electrically conductive layer (16) formed from metal particles (18) or an electrically conductive metallic sponge (416). These materials provide a porous structure with a large surface area of high accessibility. The particles are preferably directional or non-directional sponge particles of a metal, such as titanium. The conductive layer hasa dielectric film (36, 236, 414) on its surface, formed by anodizing the particle surfaces. The dielectric film has a combination of high dielectric constant and high dielectric strength. The cathode (12, 212, 420) of the capacitor is either a conventional solid material or, more preferably, has a large surface provided by forming the surface from a sponge or particles analogously to the anode. The high dielectric strengths obtainable from the capacitor allow for extreme miniaturization, making the capacitor particularly suited for integrated circuit applications.

In a near-infrared reflective substrate prepared by forming on a transparent substrate a near-infrared reflective film prepared by alternate deposition of low-refractive-index dielectric films and high-refractive-index dielectric films, there is provided a near-infrared reflective substrate characterized in that the transparent substrate is a plate glass or polymer resin sheet, that it is 70% or greater in visible light transmittance defined in JIS R3106-1998, and that it has a maximum value of reflection that exceeds 50% in a wavelength region of 900 nm to 1400 nm.

An IR detector in the form of a thermopile including one or more thermocouples on a dielectric membrane supported by a silicon substrate. Each thermocouple is composed of two materials, at least one of which is p-doped or n-doped single crystal silicon. The device is formed in an SOI process. The device is advantageous as the use of single crystal silicon reduces the noise in the output signal, allows higher reproducibility of the geometrical and physical properties of the layer and in addition, the use of an SOI process allows a temperature sensor, as well as circuitry to be fabricated on the same chip. The detector can also have an IR filter wafer bonded onto it and/or have arrays of thermopiles to increase the sensitivity. The devices can also be integrated with an IR source on the same silicon chip and packaged to form a complete and miniaturised NDIR sensor.

A high dielectric film is formed by utilizing atom injection into a film through ion implantation or the like, and heat treatment. For example, an SiO2 film 102 which is a thermal oxide film is formed on a silicon substrate 101, and then Zr ions (Zr+) are injected from a plasma 105 into the SiO2 film 102. Thereafter, by annealing the SiO2 film 102 and a Zr injected layer 103, injected Zr is diffused in the Zr injected layer 103 and then the SiO2 film 102 and the Zr injected layer 103 are as a whole changed into a high dielectric film 106 of a high dielectric constant formed of Zr-Si-O (silicate). By using the high dielectric film 106 as an insulating film for an MISFET, an MISFET having excellent gate leakage properties can be achieved.

A method for forming electronic assemblies includes providing a plurality of IC die each having IC bonding conductors and a workpiece having workpiece bonding conductors. A curable dielectric film is applied to the IC bonding conductors or the workpiece surface. The plurality of IC die are placed on the workpiece surface so that the plurality of IC bonding conductors are aligned to and face the plurality of workpiece bonding conductors to provide a first bonding. The placing is performed at a vacuum level corresponding to a pressure <1 kPa, and at a temperature sufficient to provide tackiness to the curable dielectric film. The plurality of IC die are then pressed to provide a second bonding. A temperature during pressing cures the curable dielectric film to provide an underfill and forms metallic joints between the plurality of IC bonding conductors and the plurality of workpiece bonding conductors.

The present invention is directed to the use of a high vapor pressure liquid prior to or simultaneous with cryogenic cleaning to remove contaminants from the surface of substrates requiring precision cleaning such as semiconductors, metal films, or dielectric films. A liquid suitable for use in the present invention preferably has a vapor pressure above 5 kPa and a freezing point below −50° C.

In a capacitor device of the present invention includes a substrate, a plurality of lower electrodes formed on the substrate, a plurality of dielectric films formed on a plurality of lower electrodes respectively in a state that the dielectric films are separated mutually, and upper electrodes formed on a plurality of dielectric films respectively, a plurality of capacitors each composed of the lower electrode, the dielectric film, and the upper electrode are arranged on the substrate respectively, and each of the dielectric films in a plurality of capacitors has a different film thickness.

The invention relates to a preparation method of a dielectric-film diversion material of high vacuum vapor deposition; the preparation method comprises the following steps: A. a plastic film base-material layer is adopted and coated with a transparent demoulding coating layer; B. a release layer is coated with a holographical laser molding coating layer so as to form an imaging layer; C. molding is carried out on the imaging layer so as to form a holographical laser die pressing layer with anti-counterfeiting performance; D. vacuum vapor deposition is carried out on the molding layer so as to form a dielectric coated layer; E. an adhesive layer is coated on the vapor deposition dielectric layer, and paper or plastic film are stuck to the adhesive layer to form a sheet layer; F. the film is peeled from a release layer so as to obtain the diversion laser dielectric paper or plastic film. The dielectric film diversion material of high vacuum vapor deposition has not only the performance of anti-counterfeiting and anti-oxidation, but also ideal performance of air resistance, humidity resistance and wearing resistance, etc. by coating a functional paint in subsequent processing and is an ideal anti-counterfeiting material.

An infra-red (IR) device comprising a dielectric membrane formed on a silicon substrate comprising an etched portion; and at least one patterned layer formed within or on the dielectric membrane for controlling IR emission or IR absorption of the IR device, wherein the at least one patterned layer comprises laterally spaced structures.

The invention discloses a solar cell with a composite dielectric passivation layer structure and a preparation process thereof. A silicon oxide film, an alumina film and a silicon nitride or silicon oxynitride film are deposited in turn on the front, back and sides of a p-type silicon substrate to form a composite dielectric film on the whole surface, and windows are opened locally to lead electrodes out. Through aluminum oxide, silicon dioxide, silicon oxynitride, silicon nitride with different refractive indexes and a back surface passivation layer with a laminated structure of the materials, the back surface recombination rate is greatly reduced, the back reflectivity is improved, the CTM of a module is reduced, and the light attenuation and heat-assisted light attenuation and the anti-PID performance of the cell are improved. The structure can be made on a boron/gallium-doped p-type monocrystalline silicon, p-type polycrystalline silicon or p-type monocrystalline-silicon-like substrate, and a passivation method based on the composite dielectric film passivation structure can be used to manufacture PERC cells, double-sided PERC+ cells and imbricate PERC cells. Based on the preparation process steps and sequence, the corresponding preparation mode and the process parameter range of the laminated structure, the making of the cell can be well completed.

A capacitor includes a capacitor part formed of a dielectric film sandwiched by a pair of electrodes and a support body formed of a film of an organic polysilane. The support body is provided so as to support the capacitor part thereon.