Reaction cavity and semiconductor processing device

Abstract

The invention provides a reaction cavity and a semiconductor processing device. The reaction cavity comprises a technical cavity for generating plasmas, an ignition device arranged at the top of the technical cavity and an RF source; the ignition device starts the plasmas positioned in part of the ignition device; and the RF source provides an RF energy to a first RF coil and the ignition device, adjusts distribution of the RF energy obtained by the first RF coil and the ignition device, and starts the plasmas in part of the ignition device and in the technical cavity sequentially. The reaction cavity provided by the invention ensure smooth starting, keeps the technical air pressure in the technical cavity constant, and thus, improves the total technical stability. In the starting process, the technical air pressure in the technical cavity is relatively low, the etching uniformity can be improved, and a substrate is prevented from damage caused by relatively high starting voltage.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a reaction chamber and semiconductor processing equipment. Background technique [0002] In the semiconductor manufacturing process, the inductively coupled plasma (ICP) equipment can obtain high-density plasma at a low working pressure, and has a simple structure and low cost. (determines the plasma density) and the substrate stage radio frequency source (determines the particle energy incident on the wafer) is independently controlled, therefore, ICP equipment is widely used in plasma etching (IC), physical vapor deposition (PVD), plasma Chemical Vapor Deposition (CVD), Micro Electro Mechanical Systems (MEMS) and Light Emitting Diodes (LED) and other processes. [0003] Currently, in the pre-cleaning process, inductively coupled plasma is usually used to generate high-density plasma to process the substrate. The composition of the pre-cleaning chamber is as follows ...

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Problems solved by technology

[0005] In order to achieve uniform physical etching results, the above pre-cleaning process usually needs to be carried out at a lower process pressure (about 1mT), but the lower process pressure will make it difficult to start the inductively coupled plasma, or even fail to start at all. , therefore, the process needs to be divided into two steps of initiation and process, and this will have the following problems:

[0006] First, in the ignition step, the process pressure is high (above 10mT), the free paths of various particles are short, and the directionality of ions is poor. At this time, a negative bias voltage is applied to the carrier 10 to attract argon Ion bombardment of the substrate can cause deterioration of etch uniformity

In addition, since the high-pressure ignition area is relatively close to the substrate, the substrate is easily damaged due to the high ignition voltage at the moment of ignition.

[0007] Second, when the ignition is completed and the process is started, it is necessary to reduce the argon flow into the chamber and adjust the exhaust flow of the exhaust port 7 to reduce the process pressure to below 1mT, that is to say, at When the process is carried out, the process pressure will change from large to small, which is not conducive to the stability of the entire process, and even the situation of broken light will appear

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