267results about How to "Uniform etching" patented technology

An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching.

A two stage plasma etching technique is described that allows the fabrication of an enhancement mode GaN HFET / HEMT. A gate recess area is formed in the Aluminum Gallium Nitride barrier layer of an GaN HFET / HEMT. The gate recess is formed by a two stage etching process. The first stage of the technique uses oxygen to oxidize the surface of the Aluminum Gallium Nitride barrier layer below the gate. Then the second stage uses Boron tricloride to remove the oxidized layer. The result is a self limiting etch process that uniformly thins the Aluminum Gallium Nitride layer below the HFET's gate region such that the two dimensional electron gas is not formed below the gate, thus creating an enhancement mode HFET.

There is provided a plasma etching device for generating plasma as a processing gas between an upper electrode (34) and a lower electrode (16) and subjecting a wafer (W) to plasma etching. The upper electrode (34) includes a variable DC power source (50) for applying DC voltage so that the absolute value of the self bias voltage Vdc on the surface of the upper electrode (34) becomes large enough to obtain an appropriate sputter effect to the surface and the thickness of the plasma sheath on the upper electrode (34) becomes thick enough to form a desired miniaturization plasma.

The invention provides a rotary cylindrical magnetic control sputtering target, which comprises a pole terminal, permanent magnets, hollow cylindrical target material and a mandrel, wherein, the permanent magnets are embedded into the pole terminal along the axial direction of the cylindrical target material; the permanent magnets are long permanent magnetic strips and short permanent magnetic strips; positioning slots which are used for arrangement of the long permanent magnetic strips and the short permanent magnetic strips are arranged on the pole terminal; the long permanent magnetic strips and the short permanent magnetic strips are respectively arranged in corresponding positioning slots; a multipath bar magnet is formed by alternate distribution of the long permanent magnetic strips and the short permanent magnetic strips along the circumferential direction of the pole terminal; the polarity of the long permanent magnetic strips and that of the short permanent magnetic strips are different; the polarization direction is perpendicular to a central axis of a sputtering cathode; and closed racetrack shaped magnetic force lines are formed by magnetic rings on both ends of the pole terminal and the long permanent magnetic strips and the short permanent magnetic strips. The rotary cylindrical magnetic control sputtering target realizes low air pressure, high density and uniformity of discharge plasma, guarantees formation of a closed electronic racetrack under the condition of glow discharge, makes sputtering perform stably, has good surface quality of membranous layers and compact membranous layers, and is uniform in the consumption of the target materials and high in the utilization rate of the target materials.

The invention discloses ITO-Ag-ITO etching liquid for an AMOLED. The liquid comprises, by weight percentage, 3% to 10% of nitric acid, 10% to 25% of acetic acid, 30% to 60% of a mixture of phosphoric acid and soluble orthophosphate, 1% to 5% of an additive and the balance deionized water, wherein the additive comprises nitrate. The soluble orthophosphate is added so that the viscosity of the etching liquid can be properly increased, it is guaranteed that the etched surface has the reasonable reactant and product concentration gradient in the etching process, and compared with the prior art, the silver etching speed can be properly reduced, the even etching effect can be achieved, and the controllable electrode shape is obtained; and decomposition of the acetic acid, the nitric acid and nitrous acid in the etching process can be remarkably reduced, and environment-friendly production of the etching process can be achieved conveniently.

The invention relates to a rotary magnetic control sputtering target, which comprises a pole terminal, permanent magnets and cylindrical target material, wherein, tree rows of permanent magnets are uniformly arranged in the pole terminal along the circumferential direction towards one side of a matrix within the range of 120 DEG; the permanent magnets comprise long permanent magnetic strips and short permanent magnetic strips; the short permanent magnetic strips are arranged in the middle position of the pole terminal; a long permanent magnetic strip is respectively arranged on both sides of the pole terminal; a shielding case is arranged on the circumference of the cylindrical target material and provided with sputtering openings on one sides of the permanent magnets facing to the matrix; the polarity of the long permanent magnetic strips and that of the short permanent magnetic strips are different; the polarization direction is perpendicular to a central axis of a sputtering cathode; and a closed racetrack shaped magnetic force line is formed by magnetic rings on both ends of the pole terminal and the long permanent magnetic strips and the short permanent magnetic strips. When the rotary magnetic control sputtering target is operated, the cylindrical target material is rotated at a constant speed and the surface etching of the target is uniform, thereby the consumption of the target material is uniform and the service life is long; the shielding case can effectively reduce sputtering precipitation of sputtering particles towards an anode and the wall of a vacuum cavity and satisfactorily guarantee stability of the sputtering process and the quality of a deposition film; the application prospect of the target is good.

The invention discloses a fabrication method of a Ti movable device. The fabrication method comprises the following steps: etching a Ti substrate by plasma etching technology to form a deep groove, and filling the deep groove; bonding the Ti substrate with another substrate; thinning the back of the Ti substrate by chemical corrosion and chemical mechanical polishing until the deep groove is exposed; removing the filler in the deep groove; and releasing the movable structure to obtain a Ti micro-device with the movable structure. The method can achieve high-accuracy and high-aspect-ratio 3D processing of Ti on a plurality kinds of substrates, and can be used for processing a plurality of MEMS devices. The entire process adopts micro-electronic processing method, and has the advantages of high accuracy and uniform etching. The fabricated device has the advantages of bright surface, smooth sidewall, flat surface and small stress.