593results about How to "Suppress Diffuse" patented technology

The present invention is related to an apparatus and a method for chemical vapor deposition (CVD) using a showerhead through which a reactive gas of at least one kind and a purge gas is injected over a substrate on which a film is growing. A plural number of reactive gas showerhead modules are laid on a purge gas showerhead module. Each reactive gas is injected from a bottom of the showerhead after flowing through the showerhead as separated, thereby preventing the reactive gases from causing homogeneous gas phase reactions and from generating unwanted particles at the inside of the showerhead. And purge gas is injected from the bottom surface of the showerhead by forming a protective curtain, thereby suppressing diffusion of the reactive gas injected backwardly. Each reactive gas is mixed with an injection support gas which is a kind of inert gas in a mixing zone at inside of the showerhead, where the injection velocity of each reactive gas is regulated positively by the amount of the injection support gas mixed. The present invention further includes an apparatus and a method, wherein the showerhead is cooled by a cooling jacket which keeps the temperature of the showerhead at proper levels to prevent both the condensation and the thermal decomposition of the reactive gas used.

There is provided a semiconductor substrate for solid-state image sensing device in which the production cost is lower than that of a gettering method through a carbon ion implantation and problems such as occurrence of particles at a device production step and the like are solved.Silicon substrate contains solid-soluted carbon having a concentration of 1×1016-1×1017 atoms / cm3 and solid-soluted oxygen having a concentration of 1.4×1018-1.6×1018 atoms / cm3.

A negative electrode for a lithium ion secondary battery includes a current collector, an intermediate layer formed on a surface of the current collector, and an active material layer formed on the intermediate layer. The current collector includes a metal capable of being alloyed with silicon. The active material layer includes an active material including silicon. The intermediate layer includes silicon and oxygen. The intermediate layer prevents the metal capable of being alloyed with silicon from diffusing into the active material layer. The diffusion of the constituent element of the current collector into the active material layer is suppressed.

A method of manufacturing a semiconductor device includes forming isolation regions, a gate insulator film and gate electrodes, implanting in the silicon substrate with impurity ions, annealing to recover crystallinity of the implanted silicon substrate without diffusing the impurity ions, depositing an interlayer insulator film on the isolation regions, the silicon substrate, and the gate electrodes, and heating the silicon substrate by irradiating a light having a wavelength that the light is absorbed by the silicon substrate without being absorbed by the interlayer insulator film, activating the impurity ions so as to form source and drain regions.

Structure and methods of fabrication are disclosed for an enhanced FET devices in which dopant impurities are prevented from diffusing through the gate insulator. The structure comprises a Si:C, or SiGe:C, layer which is sandwiched between the gate insulator and a layer which is doped with impurities in order to provide a preselected workfunction. It is further disclosed how this, and further improvements for FET devices, such as raised source / drain and multifaceted gate on insulator, MODFET on insulator are integrated with strained Si based layer on insulator technology.

A display device according to the present invention includes: a planarization layer for insulating between a gate electrode etc. and a data wiring, a drain electrode, or the like of the transistor; and a barrier layer that is formed on an upper surface or lower surface of the planarization layer and at the same time, adapted to suppress diffusion of moisture or degassing components from the planarization layer. The display device adopts a device structure effective in reducing the plasma damage on the planarization layer by devising a positional relationship between the planarization layer and the barrier layer. Also, in combination with a novel structure as a structure for a pixel electrode, effects such as an increase in luminance can be provided as well.

Source and drain extension regions are selectively removed by a dopant concentration dependent etch or a doping type dependent etch, and an embedded stress-generating material such as SiGe alloy or a Si:C alloy in the source and drain extension regions is grown on a semiconductor substrate. The embedded stress-generating material may be grown only in the source and drain extension regions, or in the source and drain extension regions and in deep source and drain regions. In one embodiment, an etch process that removes doped semiconductor regions of one conductivity type selective to doped semiconductor regions of another conductivity type may be employed. In another embodiment, a dopant concentration dependent etch process that removes doped semiconductor regions irrespective of the conductivity type selective to undoped semiconductor regions may be employed.

A light emitting device includes a package having a recessed portion defined by a bottom surface and a side surface and a light emitting element mounted on the bottom surface of the recessed portion, in which the package has fibrous fillers, and at least some of the fillers are projected outwards through the side surface and coated with a reflection film made of metal.

First irradiation which causes an emission output from a flash lamp to reach its maximum value over a time period in the range of 1 to 20 milliseconds is performed to increase the temperature of a front surface of a semiconductor wafer from a preheating temperature to a target temperature for a time period in the range of 1 to 20 milliseconds. This achieves the activation of the impurities. Subsequently, second irradiation which gradually decreases the emission output from the maximum value over a time period in the range of 3 to 50 milliseconds is performed to maintain the temperature of the front surface within a ±25° C. range around the target temperature for a time period in the range of 3 to 50 milliseconds. This prevents the occurrence of process-induced damage while suppressing the diffusion of the impurities.

The present invention is related to an apparatus and a method for chemical vapor deposition (CVD) using a showerhead through which a reactive gas of at least one kind and a purge gas is injected over a substrate on which a film is growing. A plural number of reactive gas showerhead modules are laid on a purge gas showerhead module. Each reactive gas is injected from a bottom of the showerhead after flowing through the showerhead as separated, thereby preventing the reactive gases from causing homogeneous gas phase reactions and from generating unwanted particles at the inside of the showerhead. And a purge gas is injected from the bottom surface of the showerhead by forming a protective curtain, thereby suppressing diffusion of the reactive gas injected backwardly. Each reactive gas is mixed with an injection support gas which is a kind of inert gas in a mixing zone at inside of the showerhead, where the injection velocity of each reactive gas is regulated positively by the amount of the injection support gas mixed. The present invention further includes an apparatus and a method, wherein the showerhead is cooled by a cooling jacket which keeps the temperature of the showerhead at proper levels to prevent both the condensation and the thermal decomposition of the reactive gas used.

To provide a semiconductor device including an oxide semiconductor in which a change in electrical characteristics is suppressed or whose reliability is improved. In a semiconductor device including an oxide semiconductor film in which a channel formation region is formed, an insulating film which suppresses entry of water and contains at least nitrogen and an insulating film which suppresses entry of nitrogen released form the insulating film are provided over the oxide semiconductor film. As water entering the oxide semiconductor film, water contained in the air, water in a film provided over the insulating film which suppresses entry of water, or the like can be given. Further, as the insulating film which suppresses entry of water, a nitride insulating film can be used, and the amount of hydrogen molecules released by heating from the nitride insulating film is smaller than 5.0×1021 molecules / cm3.

A pseudo surface microwave produced plasma shielding system is a simple device that creates a prescribed plasma environment with a prescribed plasma density gradient, and protects an object surrounded by this environment as a shield. Pseudo surface microwaves interacting with an artificial intelligence equipped on board are used to create and to adjust this plasma environment for a particular application. This plasma environment provides potential capabilities of military applications of the plasma in the system. Examples of military applications include a stealth system from RADAR and SONAR, a protection system from WMD, and a weapon system to generate and launch plasmoids as a plasma gun. The scope of this invention extends to commercial applications of this plasma shielding system as a conditioned and controlled flow field, for example, a boundary layer and turbulence control system, and a lift control system to improve flight performance and flight economy of aircrafts. It further extends to develop a concept of a new type of engine using this plasma shielding system as a heating method alternative to the conventional combustion method that uses petroleum based fuel in the combustion chamber of an engine.