445 results about "Perpendicular magnetic anisotropy" patented technology

A spin-torque transfer memory random access memory (STTMRAM) element includes a fixed layer formed on top of a substrate and a a tunnel layer formed upon the fixed layer and a composite free layer formed upon the tunnel barrier layer and made of an iron platinum alloy with at least one of X or Y material, X being from a group consisting of: boron (B), phosphorous (P), carbon (C), and nitride (N) and Y being from a group consisting of: tantalum (Ta), titanium (Ti), niobium (Nb), zirconium (Zr), tungsten (W), silicon (Si), copper (Cu), silver (Ag), aluminum (Al), chromium (Cr), tin (Sn), lead (Pb), antimony (Sb), hafnium (Hf) and bismuth (Bi), molybdenum (Mo) or rhodium (Ru), the magnetization direction of each of the composite free layer and fixed layer being substantially perpendicular to the plane of the substrate.

A magnetic memory element switchable by current injection includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers (e.g., between two of the magnetic layers). The memory element has the switching threshold current and device impedance suitable for integration with complementary metal oxide semiconductor (CMOS) integrated circuits.

A MTJ for a spintronic device is disclosed and includes a thin composite seed layer made of at least Ta and a metal layer having fcc(111) or hcp(001) texture as in Ta/Ti/Cu to enhance perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (CoFe/Ni)_X, (Co/NiFe)_X, (Co/NiCo)_X, (CoFe/NiFe)_X, or (CoFe/NiCo)_X composition where x is from 5 to 30. In one embodiment, a CPP-TMR spin valve has one or both of a laminated free layer and laminated reference layer with the aforementioned compositions. The MTJ includes an interfacial layer made of CoFeB, CoFeB/CoFe, or CoFe/CoFeB between each laminated structure and the tunnel barrier. The laminated layers are deposited by a low power and high Ar pressure process to avoid damaging interfaces between adjoining layers. Annealing occurs at 220° C. to 400° C. A laminated layer with high PMA may also be included in one or more layers of a spin transfer oscillator.

A memory cell including information that is stored in the state of a magnetic bit (i.e. in a free layer, FL), where the FL magnetization has two stable states that may be canted (form an angle) with respect to the horizontal and vertical directions of the device is presented. The FL magnetization may be switched between the two canted states by the application of a voltage (i.e. electric field), which modifies the perpendicular magnetic anisotropy of the free layer.

Perpendicular magnetic anisotropy and Hc are enhanced in magnetic devices with a Ta/M1/M2 seed layer where M1 is preferably Ti, and M2 is preferably Cu, and including an overlying (Co/Ni)_X multilayer (x is 5 to 50) that is deposited with ultra high Ar pressure of >100 sccm to minimize impinging energy that could damage (Co/Ni)_X interfaces. In one'embodiment, the seed layer is subjected to one or both of a low power plasma treatment and natural oxidation process to form a more uniform interface with the (Co/Ni)_X multilayer. Furthermore, an oxygen surfactant layer may be formed at one or more interfaces between adjoining (Co/Ni)_X layers in the multilayer stack. Annealing at temperatures between 180° C. and 400° C. also increases Hc but the upper limit depends on whether the magnetic device is MAMR, MRAM, a hard bias structure, or a perpendicular magnetic medium.

A method and system for providing a magnetic element and a magnetic memory utilizing the magnetic element are described. The magnetic element is used in a magnetic device that includes a contact electrically coupled to the magnetic element. The method and system include providing pinned, nonmagnetic spacer, and free layers. The free layer has an out-of-plane demagnetization energy and a perpendicular magnetic anisotropy corresponding to a perpendicular anisotropy energy that is less than the out-of-plane demagnetization energy. The nonmagnetic spacer layer is between the pinned and free layers. The method and system also include providing a perpendicular capping layer adjoining the free layer and the contact. The perpendicular capping layer induces at least part of the perpendicular magnetic anisotropy in the free layer. The magnetic element is configured to allow the free layer to be switched between magnetic states when a write current is passed through the magnetic element.

A magnetic tunnel junction (MTJ) includes a magnetic free layer, having a variable magnetization direction; an insulating tunnel barrier located adjacent to the free layer; a magnetic fixed layer having an invariable magnetization direction, the fixed layer disposed adjacent the tunnel barrier such that the tunnel barrier is located between the free layer and the fixed layer, wherein the free layer and the fixed layer have perpendicular magnetic anisotropy; and one or more of: a composite fixed layer, the composite fixed layer comprising a dusting layer, a spacer layer, and a reference layer; a synthetic antiferromagnetic (SAF) fixed layer structure, the SAF fixed layer structure comprising a SAF spacer located between the fixed layer and a second fixed magnetic layer; and a dipole layer, wherein the free layer is located between the dipole layer and the tunnel barrier.

A spin transfer oscillator with a seed/SIL/spacer/FGL/capping configuration is disclosed with a composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (A1/A2)_X laminated spin injection layer (SIL). Field generation layer (FGL) is made of a high Bs material such FeCo. Alternatively, the STO has a seed/FGL/spacer/SIL/capping configuration. The SIL may include a FeCo layer that is exchanged coupled with the (A1/A2)_X laminate (x is 5 to 50) to improve robustness. The FGL may include an (A1/A2)_Y laminate (y=5 to 30) exchange coupled with the high Bs layer to enable easier oscillations. A1 may be one of Co, CoFe, or CoFeR where R is a metal, and A2 is one of Ni, NiCo, or NiFe. The STO may be formed between a main pole and trailing shield in a write head.

A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/Ni)_n composition or the like where n is from 2 to 30. The seed layer is preferably NiCr, NiFeCr, Hf, or a composite thereof with a thickness from 10 to 100 Angstroms. Furthermore, a magnetic layer such as CoFeB may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. There may be a Ta insertion layer between the CoFeB layer and laminated layer to promote (100) crystallization in the CoFeB layer. The laminated layer may be used as a reference layer, dipole layer, or free layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer.

A magnetic recording medium includes a non-magnetic substrate; a soft magnetic layer which is formed on the non-magnetic substrate and which includes projected parts arranged on the surface thereof and recessed parts surrounding each of the projected part; and a ferromagnetic layer which is formed on the soft magnetic layer and which includes projected parts and recessed parts reflecting the projected parts and the recessed parts of the soft magnetic layer. Further the magnetic recording medium includes recording areas which have perpendicular magnetic anisotropy and ferromagnetism, and which are formed of the projected parts of the ferromagnetic layer and separated magnetically from their surroundings. A method for manufacture of the magnetic recording medium includes forming a soft magnetic layer including of projected parts arranged regularly on the surface thereof and recessed parts surrounding each projected part; and forming a ferromagnetic layer having perpendicular magnetic anisotropy on the soft magnetic layer.

Disclosed is a spin-orbit torque magnetic random access memory (SOT-MRAM) without an external magnetic field. The spin-orbit torque magnetic tunneling junction(SOT-MTJ) of the random access memory is based on perpendicular magnetic anisotropy, apart from comprising an anti-parallel layer, a tunneling barrier layer, a reference layer and an antiferromagnetc metal layer in a conventional MTJ structure, is also additionally provided with a nonferromagnetic metal layer, optimizes the material of the antiferromagnetc metal layer and improves the shape of the tunneling barrier layer; and the SOT-MTJ structure is successively provided with seven layers which are respectively a bottom electrode, the nonferromagnetic metal layer, a first ferromagnetic metal layer, i.e., the anti-parallel layer, a wedge tunneling barrier layer, a second ferromagnetic metal layer, i.e., the reference layer, the antiferromagnetc metal layer and a top electrode from the bottom to the top. According to the invention, writing operation can be carried out without the external magnetic field. Compared to a conventional SOT-MRAM, the energy consumption is smaller, and the geometric ratio micro-shrink performance reduced along with a technical node is more excellent.

A magnetic tunnel junction (MTJ) for a magnetic random access memory (MRAM) includes a magnetic free layer having a variable magnetization direction; an iron (Fe) dusting layer formed on the free layer; an insulating tunnel barrier formed on the dusting layer; and a magnetic fixed layer having an invariable magnetization direction, disposed adjacent the tunnel barrier such that the tunnel barrier is located between the free layer and the fixed layer; wherein the free layer and the fixed layer have perpendicular magnetic anisotropy and are magnetically coupled through the tunnel barrier.

A magnetoresistive element includes an underlying layer having a cubic or tetragonal crystal structure oriented in a (001) plane, a first magnetic layer provided on the underlying layer, having perpendicular magnetic anisotropy, and having an fct structure oriented in a (001) plane, a non-magnetic layer provided on the first magnetic layer, and a second magnetic layer provided on the non-magnetic layer, and having perpendicular magnetic anisotropy. An in-plane lattice constant a1 of the underlying layer and an in-plane lattice constant a2 of the first magnetic layer satisfy the following equation in which b is a magnitude of Burgers vector of the first magnetic layer, ν is an elastic modulus of the first magnetic layer, and hc is a thickness of the first magnetic layer.

|√{square root over (2)}a1/2−a2|/a2<b×{ln (hc/b)+1}/{2π×hc×(1+ν)}