Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements

Abstract

A method and system for providing a magnetic element and a magnetic memory utilizing the magnetic element are described. The magnetic element is used in a magnetic device that includes a contact electrically coupled to the magnetic element. The method and system include providing pinned, nonmagnetic spacer, and free layers. The free layer has an out-of-plane demagnetization energy and a perpendicular magnetic anisotropy corresponding to a perpendicular anisotropy energy that is less than the out-of-plane demagnetization energy. The nonmagnetic spacer layer is between the pinned and free layers. The method and system also include providing a perpendicular capping layer adjoining the free layer and the contact. The perpendicular capping layer induces at least part of the perpendicular magnetic anisotropy in the free layer. The magnetic element is configured to allow the free layer to be switched between magnetic states when a write current is passed through the magnetic element.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]The present application is a continuation-in-part of co-pending patent application Ser. No. 12 / 538,489, filed Aug. 10, 2009, entitled “Method and System for Providing Magnetic Tunneling Junction Elements Having Improved performance Through Capping Layer Induced Perpendicular Anisotropy and Memories Using Such Magnetic Elements”, and assigned to the assignee of the present application.BACKGROUND OF THE INVENTION[0002]Magnetic memories, particularly magnetic random access memories (MRAMs), have drawn increasing interest due to their potential for high read / write speed, excellent endurance, non-volatility and low power consumption during operation. An MRAM can store information utilizing magnetic materials as an information recording medium. One type of MRAM is a spin transfer torque random access memory (STT-RAM). STT-RAM utilizes magnetic elements written at least in part by a current driven through the magnetic element.[0003]For example, ...

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Benefits of technology

[0020]FIG. 9 depicts an exemplary of a dual magnetic element having improved thermal stability.

[0021]FIG. 10 depicts another exemplary of a dual magnetic element having improved thermal stability.

[0022]FIG. 11 depicts another exemplary embodiment of a dual magnetic element having improved thermal stability.

[0023]FIG. 12 depicts an

Problems solved by technology

The random nature of these fluctuations translates to the occurrence of generally rare, unusually large fluctuations.

Although a large energy barrier is desired for thermal stability, a large energy barrier may adversely affect writeability of the conventional MTJ.

In general, a larger energy barrier provided by the in plane, generally uniaxial anisotropy results in a larger switching current.

Use of a larger write current is generally undesirable for a variety of reasons including, but not limited to, increased heat generated and the potential need for a larger transistor in a magnetic memory cell.

Thus, thermal stability may be considered to be at odds with a reduced write current.

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