An object of the present invention is to ensure the stable operation of a
vacuum pump for discharging an unused source gas and reaction byproduct gases from a low-pressure
processing chamber, to recover the reaction byproducts efficiently for the effective utilization of resources and reduction of running costs. A low-pressure CVD
system has a
processing vessel (10) for carrying out a low-pressure CVD process for forming a
copper film, a source
gas supply unit (12) for supplying an organic
copper compound as a source gas, such as Cu(I)hfacTMVS, into the
processing vessel (10), and an evacuating
system (14) for evacuating the processing vessel (10). The evacuating
system (14) includes a
vacuum pump (26), a high-temperature
trapping device (28) disposed above the
vacuum pump (26) with respect to the flowing direction of a gas, and a low-temperature
trapping device (30) disposed below the vacuum pump with respect to the flowing direction of a gas. The high-temperature
trapping device (28) decomposes the unused Cu(I)hfacTMVS contained in a gas sucked out of the processing vessel (10) to trap metallic
copper. The low-temperature trapping device traps Cu(II)(hfac)2 produced as a reaction byproduct.