The invention discloses a nitride-based semiconductor light-emitting device with improved ohmic contact characteristics for an n-electrode and a manufacturing method thereof. The nitride-based semiconductor light emitting device includes an n-electrode, a p-electrode, and an n-type compound semiconductor layer, an active layer, and a p-type semiconductor layer formed between the n- and p-electrodes. The n-electrode includes a first electrode layer formed of at least one element selected from the group consisting of Pd, Pt, Ni, Co, Rh, Ir, Fe, Ru, Os, Cu, Ag, and Au; Conductivity of at least one element selected from the group consisting of Ti, V, Cr, Zr, Nb, Hf, Ta, Mo, W, Re, Ir, Al, In, Pb, Ni, Rh, Ru, Os, and Au material and form the second electrode layer on the first electrode layer.