70results about How to "Improved ohmic contact characteristics" patented technology

Provided are a reflective electrode and a compound semiconductor light emitting device having the reflective electrode, such as LED or LD is provided. The reflective electrode formed on a p-type compound semiconductor layer of a compound semiconductor light emitting device, comprising a first electrode layer formed one of a Ag and Ag-alloy and forms an ohmic contact with the p-type compound semiconductor layer, a third electrode layer formed of a material selected from the group consisting of Ni, Ni-alloy, Zn, Zn-alloy, Cu, Cu-alloy, Ru, Ir, and Rh on the first electrode layer, and a fourth electrode layer formed of a light reflective material on the third electrode layer.

In the nitride semiconductor device using the silicon substrate, the metal electrode formed on the silicon substrate has both ohmic contact property and adhesion, so that the nitride semiconductor device having excellent electric properties and reliability is obtained. The nitride semiconductor device includes a silicon substrate (2), a nitride semiconductor layer (10) formed on the silicon substrate (2), and metal electrodes (8, 8′) formed in contact with the silicon substrate (2). The metal electrodes (8, 8′) has first metal layers (4, 4′) which are formed in a shape of discrete islands and in contact with the silicon substrate (2), and second metal layers (6, 6′) which are in contact with the silicon substrate (2) exposed among the islands of the first metal layers (4, 4′) and are formed to cover the first metal layers (4, 4′). Further, the second metal layers (6, 6′) are made of a metal capable of forming ohmic contact with silicon, and the first metal layers (4, 4′) are made of an alloy containing a metal and silicon, in which the metal is different than that in the second metal layer (6,6′).

Provided is an epitaxial substrate capable of achieving a semiconductor device that has excellent ohmic contact characteristics as well as satisfactory device characteristics. On a base substrate, a channel layer formed of a first group III nitride that contains at least Al and Ga and has a composition of Inx1Aly1Gaz1N (x1+y1+z1=1) is formed. On the channel layer, a barrier layer formed of a second group III nitride that contains at least In and Al and has a composition of Inx2Aly2Gaz2N (x2+y2+z2=1) is formed such that an In composition ratio of a near-surface portion is larger than an In composition ratio of a portion other than the near-surface portion.

Provided are a reflective electrode and a compound semiconductor light emitting device having the reflective electrode, such as LED or LD is provided. The reflective electrode formed on a p-type compound semiconductor layer of a compound semiconductor light emitting device, comprising a first electrode layer formed one of a Ag and Ag-alloy and forms an ohmic contact with the p-type compound semiconductor layer, a third electrode layer formed of a material selected from the group consisting of Ni, Ni-alloy, Zn, Zn-alloy, Cu, Cu-alloy, Ru, Ir, and Rh on the first electrode layer, and a fourth electrode layer formed of a light reflective material on the third electrode layer.

Provided is an organic light emitting device including a transparent electrode in which conducting filaments are formed and a method of manufacturing the same. In the organic light emitting device, a transparent electrode of an organic light emitting device is formed by using a resistance change material which has high transmittance with respect to light in a UV wavelength range and of which resistance state is to be changed from a high resistance state into a low resistance state due to conducting filaments, which current can flow through, formed in the material if a voltage exceeding a threshold voltage inherent in a material is applied to the material, so that it is possible to obtain the transparent electrode having high transmittance with respect to light in a UV wavelength range as well as light in a visible wavelength range generated by the organic light emitting device and having high conductivity.

In a p-n junction-type compound semiconductor light-emitting diode provided on a crystal substrate with at least an n-type active layer formed of a Group III nitride semiconductor as a light emitting layer, and with a Group III nitride semiconductor layer containing a p-type impurity on the n-type active layer, the diode has a boron phosphide-based Group III-V compound semiconductor layer possessing a band gap exceeding that of the Group III nitride semiconductor forming the n-type active layer at room temperature and exhibiting a p-type electroconductivity in an undoped state deposited on the p-type impurity-containing Group Ill nitride semiconductor layer, and has an ohmic positive electrode joined to a surface of the boron phosphide-based Group III-V compound semiconductor layer.

Provided are a flip-chip nitride-based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising a reflective layer formed on the p-type clad layer and at least one transparent conductive thin film layer made up of transparent conductive materials capable of inhibiting diffusion of materials constituting the reflective layer, interposed between the p-type clad layer and reflective layer; and a process for preparing the same. In accordance with the flip-chip nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact properties with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current-voltage properties.

A method of manufacturing a transistor and a method of manufacturing an organic electroluminescence display are disclosed. When an amorphous silicon layer is crystallized, a silicon oxide layer formed on a polysilicon layer is subsequently patterned. Impurity ions are implanted into first and second regions of the amorphous silicon layer to form first and second doped regions. The silicon oxide layer is patterned so that the silicon oxide layer may be removed from an ohmic contact region of the polysilicon layer, and covers only a channel region of the polysilicon layer.