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Solar cell and production method therefor

A technology of silicon solar cells and manufacturing methods, applied in circuits, electrical components, photovoltaic power generation, etc., can solve the problems of poor performance of solar cells, inability to obtain diffusion barrier properties, and poor ohmic contact characteristics, etc., and achieve excellent adhesion , reduced reflection, low wiring resistance and low contact resistance

Active Publication Date: 2016-08-03
MATERIAL CONCEPT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, oxides that become TCO are not the same as SiO 2 It is more unstable than that, so there is the following problem: when the collector is formed by firing at high temperature, TCO is reduced by silicon to change its properties, and an insulating SiO is formed at the interface. 2 , the ohmic contact characteristics deteriorate
However, since the silicide is not formed with a uniform thickness, there is a problem that the emission layer near the surface of the Si substrate is not uniformly eroded, and the performance of the solar cell deteriorates.
Therefore, there is a problem that it cannot be formed with a uniform thickness over the entire area of ​​the solar cell, and sufficient diffusion barrier properties cannot be obtained.

Method used

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  • Solar cell and production method therefor
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  • Solar cell and production method therefor

Examples

Experimental program
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Effect test

Embodiment 1

[0153] A single-crystal p-type silicon wafer having a length of 156 mm x a width of 156 mm x a thickness of 0.2 mm was used as the silicon substrate. The p-type impurity is boron (B), and the impurity concentration is about 1×10 16 cm －3 . The upper surface of the wafer was etched with a KOH solution to form a concave-convex texture. Next, coat the upper surface with POCl 3, and then heat treatment at high temperature to diffuse phosphorus (P) in silicon to form n+ regions. The maximum concentration of P is about 1×10 19 cm －3 . As described above, a silicon substrate having an n-p junction was produced.

[0154] As a raw material solution, a mixed solution containing a Ti-based alkoxide compound, an Nb-based alkoxide compound, and a solvent was prepared. Using a slit coater, the raw material solution was evenly coated on the silicon substrate. The coated substrate is dried at about 200°C, and then fired at 600°C for 10 minutes in an atmospheric pressure atmosphere co...

Embodiment 2

[0170] Using the silicon substrate having an n-p junction of Example 1, an 80-nm-thick SiN film for antireflection was formed on the surface of the substrate by plasma chemical vapor deposition (PECVD). Then, the portion where the copper wiring is formed is removed by laser ablation.

[0171] On the above-mentioned silicon substrate on which the antireflection film was formed, under the same conditions as in Example 1, formation of a metal oxide and formation of copper wiring were carried out.

[0172] The resistivity of the copper wiring was 3.3 μΩcm, the adhesion strength of the copper wiring was 1.9 N / mm, and the visible light transmittance at a wavelength of 500 nm of the metal oxide layer was 92%. In addition, after heat treatment at 500° C. for 30 minutes, copper atoms were below the detection limit, no interdiffusion of Cu and Si was observed, and the diffusion barrier property was good.

Embodiment 3

[0174] Under the same conditions as in Example 1, a metal oxide layer comprising copper, titanium, and niobium is formed on a silicon substrate with a thickness of about 30 nm, and then in a reducing atmosphere formed by mixing 5% hydrogen in nitrogen, the The pressure of the atmosphere is 10 4 The heat treatment was performed for 10 minutes under the conditions of Pa and a temperature of 500°C. In the heat-treated structure, copper particles were precipitated in metal oxides containing titanium and niobium. The average diameter of the copper particles is about 5 nm.

[0175] Then, copper wiring was formed by the method described in Example 1. The resistivity of the copper wiring was 3.0 μΩcm, the adhesion strength of the copper wiring was 4.2 N / mm, and the visible light transmittance at a wavelength of 500 nm of the metal oxide layer was 90%. In addition, after heat treatment at 500° C. for 30 minutes, the copper atoms were below the detection limit, no interdiffusion of C...

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Abstract

The present invention is provided with an interface layer that minimizes interdiffusion between a silicon substrate and copper electrode wiring that are used as a solar cell, that improves the adhesive properties of copper wiring, and that is used to obtain ohmic contact characteristics. This silicon solar cell comprises a silicon substrate (1) and is provided with a metal oxide layer (100) that is formed on the silicon substrate and wiring (10) that is formed on the metal oxide layer and that comprises mainly copper. The metal oxide layer contains (a) one of either titanium or manganese, (b) one of vanadium, niobium, tantalum, or silicon, and (c) at least one of copper and nickel. In addition, the metal oxide layer comprises copper or nickel as metal particles that are diffused in the interior of the metal oxide layer.

Description

technical field [0001] The present invention relates to a silicon solar cell including copper-based metal wiring and a method of manufacturing the same. Background technique [0002] Silicon-based solar cells typically use silver as collector wiring. In recent years, the raw material price of silver has risen rapidly, accounting for more than 20% of the material price of the entire solar cell. Therefore, in order to lower the price of solar cells, it is desired to switch to copper, which is an inexpensive raw material. [0003] However, copper (Cu) and silicon (Si) diffuse into each other to form copper silicide. In addition, copper diffuses at high speed in the silicon region and forms an acceptor level at a deep level position in the band gap of silicon. The above-mentioned phenomenon causes deterioration of the characteristics of the solar cell, and therefore, in order to prevent mutual diffusion of copper and silicon, a diffusion barrier layer is required between coppe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/18
CPCH01L31/022425H01L31/068Y02E10/547H01L31/02168H01L31/022466H01L31/1884
Inventor 小池淳一须藤祐司安藤大辅T·H·黄
Owner MATERIAL CONCEPT
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