Nitride-based compound semiconductor light emitting device and method of fabricating the same
A light-emitting device and compound technology, applied in the direction of semiconductor lasers, semiconductor devices, lasers, etc., can solve problems such as difficult to form ohmic contacts, and achieve the effect of improving ohmic contact characteristics
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[0021] A nitride-based compound semiconductor light emitting device and a manufacturing method thereof according to embodiments of the present invention will now be described in detail with reference to the accompanying drawings. In the drawings, the thicknesses of layers and regions are exaggerated for clarity.
[0022] figure 1 is a schematic cross-sectional view of a nitride-based compound semiconductor light emitting device according to an embodiment of the present invention. refer to figure 1 , the nitride-based compound semiconductor light-emitting device according to the current embodiment of the present invention includes an n-electrode 31, a p-electrode 20, and an n-type compound semiconductor layer 12 formed between the n-electrode 31 and the p-electrode 20, an active layer 14, and a p-electrode type compound semiconductor layer 16. More specifically, n-type compound semiconductor layer 12 , active layer 14 , p-type compound semiconductor layer 16 , and p-electrod...
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