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Polymeric Composites, Oilfield Elements Comprising Same, and Methods of Using Same in Oilfield Applications
InactiveUS20070142547A1Improve barrier propertiesImprove mechanical propertiesNon-metal conductorsLayered productsSubject matterEngineering
Oilfield elements and assemblies are described comprising a polymeric matrix formed into an oilfield element, and a plurality of expanded graphitic nanoflakes and / or nanoplatelets dispersed in the polymeric matrix. Methods of using the oilfield elements and assemblies including same in oilfield operations are also described. This abstract allows a searcher or other reader to quickly ascertain the subject matter of the disclosure. It will not be used to interpret or limit the scope or meaning of the claims. 37 CFR 1.72(b).
Owner:SCHLUMBERGER TECH CORP
High heat-conducting thin graphene-based composite material, as well as preparation method and application thereof
InactiveCN103122075AGood thermal conductivityExcellent MechanicsHeat-exchange elementsCvd grapheneElectrospinning
The invention discloses a high heat-conducting thin graphene-based composite material, as well as a preparation method and an application thereof. The composite material comprises a base body component and a packing component, wherein the base body component and the packing component respectively include thin graphene, polymer and / or polymer monomer and a high heat-conducting material; the preparation method comprises a step of compounding the base body component with the packing component; the compounding method comprises fusing, ball-milling, solution blending, electrostatic spinning, solution spinning, melt-spinning, extruding by double screws, mixing by an open mill or powder metallurgy. The polymer, the thin graphene, the traditional high heat-conducting material and the like are compounded by a simple process, so as to form the product with excellent heat conducting property, and good mechanical and electrical properties. Therefore, the process is easy to perform and control, and cost is low; and the obtained product has a wide application prospect in the aspects such as efficient heat conduction and radiation.
Owner:苏州格瑞丰纳米科技有限公司
Lithium ion battery and anode strip thereof and stabilization lithium metal powder
ActiveCN102642024AImprove lithiation efficiencyImprove electronic conductivitySecondary cellsNon-aqueous electrolyte accumulator electrodesElectrical conductorElectrical battery
The invention belongs to the technical field of a lithium ion battery, and particularly relates to stabilization lithium metal powder. The stabilization lithium metal powder has a core shell structure; and the core layer is formed by lithium metal and is a composition consisting of an electron good conductor and a lithium ion good conductor. Compared with the prior art, the stabilization lithium metal powder provided by the invention has the advantages that: in the process of performing pre-lithiation of the anode-active material by use of the stabilization lithium metal powder, no limitation is imposed on the pressure of the cold pressing process, the 'dead lithium' disabling lithiation reaction is not produced, and the lithiation efficiency of the lithium metal powder is improved; and moreover, since the shell layer left on the electrode surface has good electron and lithium ion conductivity after the pre-lithiation, the electron and ion conductivity of the anode can be effectively improved so as to improve the electrochemical performance of the battery. In addition, the invention also discloses an anode strip performing pre-lithiation by use of the stabilization lithium metal powder, and a lithium ion battery comprising the anode strip.
Owner:NINGDE AMPEREX TECH +1
Thin film photovoltaic structure
InactiveUS20070277875A1Improve conversion efficiencyWide range of designsPhotovoltaic energy generationSemiconductor devicesSingle crystalEngineering
Photovoltaic devices include an insulator structure bonded to an exfoliation layer, preferably of a substantially single-crystal donor semiconductor wafer, and at least one photovoltaic device layer, such as a conductive layer. In a preferred embodiment, a device may include a conductive layer adjacent to the insulator substrate and integral to the exfoliation layer, near the side that faces the insulator substrate, such as between the insulator substrate and the exfoliation layer. In a further preferred embodiment, a device may include a plurality of photovoltaic device layers distal to the insulator substrate and in or on the exfoliation layer, preferably having been epitaxially grown on the exfoliation layer after the exfoliation layer has been anodically bonded to the insulator substrate by means of electrolysis.
Owner:CORNING INC
Graphene-coated porous silicon-carbon composite and method of manufacturing the same
ActiveUS20170047584A1Good electrical propertiesGood electrical conductivityElectrode thermal treatmentNegative electrodesSilicon particleCarbon composites
Provided are a porous silicon-carbon composite, which includes a core including a plurality of active particles, a conductive material formed on at least a portion of surfaces of the active particles, first pores, and second pores, and a first shell layer which is coated on the core and includes graphene, wherein the active particles include a plurality of silicon particles, silicon oxide particles, or a combination thereof, the first pores are present in the core and are formed by agglomeration of the plurality of active particles, and the second pores are irregularly dispersed and present in the core, has an average particle diameter smaller than an average particle diameter of the active particles, and are spherical, a method of manufacturing the same, and a negative electrode and a lithium secondary battery including the porous silicon-carbon composite.
Owner:LG ENERGY SOLUTION LTD
Halogen-less high frequency resin composition, and prepreg and laminate manufacturing by using same
ActiveCN101684191ALow heat resistanceImprove heat resistanceSynthetic resin layered productsWoven fabricsStyrene maleic anhydrideAbsorbance
Owner:GUANGDONG SHENGYI SCI TECH
Electrically conductive composite fibre containing carbon nanotube and method for making same
InactiveCN1840750AGood electrical propertiesIncreased durabilityFilament/thread formingArtifical filament manufactureFiberConductive polymer
The disclosed conductive composite fiber with carbon nano tube comprises a conductive core layer with 60~99.5wt% thermoplastic polymer, 0~5% carbon nano tube, 0~15% conductive carbon black, and 0.5~20% dispersant; and a shin layer with fiber-forming polymer. Wherein, the preparation method comprises mixing, extruding for granulation, and mixed spinning. This invention improves product performance.
Owner:DONGHUA UNIV
Preparation method of ceramizing fire-resistant silicon rubber
ActiveCN105694471AImprove flame retardant performanceWill not affect other performanceHalogenCombustion
The invention relates to a preparation method of ceramizing fire-resistant silicon rubber. The rubber comprises the following components in parts by weight: 100 parts of methyl vinyl silicon rubber, 20-50 parts of white carbon black, 2-10 parts of hydroxyl silicone oil, 1-5 parts of a coupling agent, 25-100 parts of ceramizing powder, 2-5 parts of a heat stabilizer, 10-40 parts of a fire retardant, and 1-2 parts of a vulcanizer. The preparation method includes the following steps: adding the methyl vinyl silicon rubber in a kneading machine; then adding the white carbon black and the hydroxyl silicone oil; mixing for 30 minutes at the temperature of 80 DEG C; then adding the coupling agent, the ceramizing powder, the heat stabilizer and the fire retardant; mixing for 1-1.5 hours; raising the temperature to be 100 DEG C and keeping high vacuum for 30 minutes; and after cooling to room temperature, adding the vulcanizer on an open mixing machine for mixing to obtain the ceramizing fire-resistant silicon rubber. The rubber has good mechanical property and electrical property at normal temperature, does not contain halogen, is smokeless and non-toxic during combustion, can be extinguished quickly and forms a ceramizing shell to guarantee integrity of the inside.
Owner:BEIJING UNIV OF CHEM TECH
Transparent Electrode Comprising Doped Graphene, Process of Preparing The Same, And Display Device And Solar Cell Comprising The Electrode
ActiveUS20120080086A1Improved opticalGood electrical propertiesMaterial nanotechnologySemiconductor/solid-state device manufacturingDopantDoped graphene
Owner:SAMSUNG ELECTRONICS CO LTD
Leadless tellurate low melting glass used as cementation phase in electronic slurry
The leadless tellurate low melting glass is used as binder phase for preparing electron paste. Said glass is mixed with functional powder to produce composite powder, which is then dispersed in organic solution to prepare thick paste, i.e. electron paste, used for making various kinds of electron devices. Said low melting glass, during sintering, melts-out and takes effect of adhering. The sintering temperature is between 350-600deg.C when making electron device. The components of the glass are (mass percentages): TeO2 10-90%,V2O5 0-40%,SiO2 0-5%,B2O3 0-5%,ZnO 0-10%,Bi2O3 0-20%,Sb2O3 0-8%,Al2O3 0-4%,SnO2 0-6%,Ag2O 0-10%,BaO 0-5%,MgO+CaO 0-5%.
Owner:BEIJING INSTITUTE OF GRAPHIC COMMUNICATION
Process to obtain biolubricants and bioparaffins by hydroprocessing mixtures of wax obtained from renewable resources and waxes of mineral origin
InactiveUS20080132435A1Good electrical propertiesElevated melting pointRefining to change hydrocarbon structural skeletonLiquid hydrocarbon mixture productionWaxChemistry
Process for hydroconversion of loads of mixtures of waxes from renewable resources that may be made up of waxes of mineral origin or waxes of animal origin, that may be used in their pure form or mixed in any proportion, that may optionally be combined with loads of hydrocarbons of mineral origin, as is the case of waxes obtained from petroleum, by industrial treatment. This mixture flow is submitted to a hydrotreatment and hydroisomerization / hydrofinishing process and the referenced process takes place under the usual hydroconversion conditions, in the presence of a hydrogen stream and hydroconversion catalysts, resulting in obtaining products referred to as biolubricants and bioparaffins, that present characteristics of being biodegradable and less of an environmental pollutant.
Owner:PETROLEO BRASILEIRO SA (PETROBRAS)
Graphene-based ternary composite film gas sensor and preparation method thereof
ActiveCN103926278ALow resistivityGood electrical propertiesMaterial electrochemical variablesMetal oxide nanoparticlesComposite film
The invention discloses a graphene-based ternary composite film gas sensor and a preparation method thereof. The graphene-based ternary composite film gas sensor consists of a ternary composite film and a substrate, wherein the ternary composite film is formed by compounding graphene, metal or metal oxide nanoparticles and conducting polymers. The high specific surface area and excellent electric and physicochemical characteristics of the graphene and the nanoparticles and the specific gas-sensitive response characteristic of the conducting polymers are fully utilized, a gain complementary mechanism is formed between different materials due to ternary compounding, and the gas-sensitive characteristic and stability of the system are enhanced. Meanwhile, the preparation method is combined with a self-assembling process with high ordering property and can be used for preparing the high-sensitivity room temperature detection gas sensor.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA
Method for preparing metal chalcogenide film
ActiveCN103194729AControl thicknessSmall sizeChemical vapor deposition coatingDeposition temperatureSulfur
The invention discloses a method for preparing a metal chalcogenide film. The method is used for growing the metal chalcogenide film on a substrate with the vapor deposition process by using a chalcogen source and a metal element source and comprises the following steps of: providing three temperature zones, wherein the temperature of the three temperature zones can be controlled independently, and the chalcogen source, the metal element source and the substrate are put in the three temperature zones respectively; controlling the three temperature zones, evaporating the chalcogen source to generate the chalcogen source steam, evaporating the metal element source to generate the metal element source steam, and heating the substrate to the predetermined deposition temperature; providing a carrier gas, and enabling the carrier gas to flow through the three temperature zones in sequence to deliver the metal element source steam to the substrate to deposit and grow so as to form the metal chalcogenide film. The method disclosed by the invention is simple, dispenses with the original complex step of introducing a nucleation site and effectively ensures the purity and the surface cleanness of a sample. The metal chalcogenide film prepared by adopting the method has high quality.
Owner:INST OF PHYSICS - CHINESE ACAD OF SCI
Method for manufacturing semiconductor device
InactiveUS20050191847A1Good electrical propertiesImprove reliabilitySemiconductor/solid-state device detailsSolid-state devicesResistDevice material
A heat treatment is performed to an insulating film composition, formed on a semiconductor substrates at a temperature of 350° C. in an inert gas ambient to form a non-porous insulating film. Next, dry etching is performed using a resist pattern as a mask to form a trench in the non-porous insulating film, ashing is performed to remove the resist pattern, and the surface of the semiconductor substrate is cleaned. Thereafter, a second heat treatment is performed for the non-porous insulating film to form a porous insulating film. Since the second heat treatment is performed in an oxidizing-gas atmosphere, the pore-generating material can be removed at a temperature lower than the temperature of conventional methods to form an insulating film having a low dielectric constant.
Owner:SANYO ELECTRIC CO LTD
Three-dimensional compound structure based on three-dimensional MXene and general synthesis method thereof
ActiveCN108516528AReduce energy consumptionEasy to control versatilityNitrogen-metal/silicon/boron binary compoundsTitanium carbideSolventSolid phases
The invention discloses a general synthesis method of a three-dimensional compound structure based on three-dimensional MXene, and belongs to the field of nano materials. The three-dimensional compound structure is composed of a three-dimensional MXene load inorganic nano structure and is of a flower-like hierarchical porous structure. The method comprises the steps that an ultrasonic atomizer isadopted for atomizing mixed suspension liquid of three-dimensional MXene particles, metal salt and an auxiliary into aerosol micro-droplets, and under inert or reactive atmosphere, high-temperature fast drying is conducted to obtain the three-dimensional compound structure with controllable structure and size; or the three-dimensional MXene particles and metal salt or a nonmetallic compound are evenly mixed in solvent or in a solid-phase mode to obtain a mixture, and high-temperature calcination is conducted under the inert or reactive atmosphere to obtain the three-dimensional compound structure with controllable structure and size. By means of the three-dimensional compound structure based on the three-dimensional MXene, the problems of inorganic nano material particle aggregation, poorconductivity and two-dimensional MXene stacking can be solved, and thus a foundation is laid for preparation, processing and various aspects of application of a MXene-based high-performance functionalmaterial.
Owner:DALIAN UNIV OF TECH
Fluorinated alkyl substituted-thieno[3,4-b]thiophene monomers and polymers therefrom
ActiveUS20050209419A1Easy to processGood electrical propertiesGroup 4/14 element organic compoundsHeteroatomPhotochemistry
Partially and fully fluorinated alkyl substituted thienothiophene monomers (and polymers thereof) wherein the monomers are represented by the formula: wherein R is a partially or fully fluorinated primary, secondary or tertiary alkyl having from 1 to 8 carbon atoms; and X and X′ are independently selected from the group consisting of H, F, Cl, Br, I, MgCl, MgBr, Mgl, Sn(R′)3, CH═CHR″, —OR″, —COOR″, —S—COR″, —B(OR″)2, —COR″, —C≡CH, and a polymerizable cyclic pi-conjugated carbon-ring structure optionally comprising S, N or O heteroatoms; wherein R′ is a primary, secondary or tertiary alkyl having from 1 to 6 carbon atoms, and R″ is H or a primary, secondary or tertiary alkyl having from 1 to 6 carbon atoms.
![Fluorinated alkyl substituted-thieno[3,4-b]thiophene monomers and polymers therefrom](https://images-eureka-patsnap-com.libproxy1.nus.edu.sg/patent_img/e982f1c5-f099-409f-9d56-3f43cf1b83ef/US20050209419A1-20050922-C00001.png "Fluorinated alkyl substituted-thieno[3,4-b]thiophene monomers and polymers therefrom")
![Fluorinated alkyl substituted-thieno[3,4-b]thiophene monomers and polymers therefrom](https://images-eureka-patsnap-com.libproxy1.nus.edu.sg/patent_img/e982f1c5-f099-409f-9d56-3f43cf1b83ef/US20050209419A1-20050922-C00002.png "Fluorinated alkyl substituted-thieno[3,4-b]thiophene monomers and polymers therefrom")
![Fluorinated alkyl substituted-thieno[3,4-b]thiophene monomers and polymers therefrom](https://images-eureka-patsnap-com.libproxy1.nus.edu.sg/patent_img/e982f1c5-f099-409f-9d56-3f43cf1b83ef/US20050209419A1-20050922-C00003.png "Fluorinated alkyl substituted-thieno[3,4-b]thiophene monomers and polymers therefrom")
Owner:SAMSUNG ELECTRONICS CO LTD
Method for transferring and washing graphene film
ActiveCN102583356AAvoid breakingIntegrity guaranteedElectrolysis componentsGraphenePolymer scienceElectrochemistry
The invention relates to a method for transferring and washing a graphene film, which belongs to the field of graphene film materials. An electrochemical method is used for peeling the graphene film, and a wetting agent is added in the used electrolyte after the graphene film is obtained by peeling. The method can achieve reutilization of a metal growth substrate, the obtained graphene film has good integrity and electrical conductivity, simultaneously the method for transferring and washing the graphene film has the advantages of being strong in applicability, low in cost and short in period and having wide application prospect.
Owner:WUXI GRAPHENE FILM +1
High-sensitivity capacitive flexible tactile sensor based on three-dimensional porous microstructure composite dielectric layer and manufacturing method thereof
ActiveCN109520646AHigh sensitivitySimple processMaterial nanotechnologyForce measurementCarbon nanotubeTactile sensor
The invention discloses a high-sensitivity capacitive flexible tactile sensor based on a three-dimensional porous microstructure composite dielectric layer and a manufacturing method thereof. The upper and lower surfaces of a three-dimensional porous microstructure composite dielectric layer are orderly provided with flexible isolation layers, flexible plates and flexible protection layers. According to the three-dimensional porous microstructure composite dielectric layer, a graphene / multi-wall carbon nanotube / silicone rubber conductive composite material is used as a force sensitive composite material, and dipping and coating the graphene / multi-wall carbon nanotube / silicone rubber conductive composite material at a polyurethane sponge three-dimensional framework surface layer, the three-dimensional porous microstructure composite dielectric layer is obtained through self-assembly. The capacitive flexible tactile sensor of the invention has good flexibility, detection sensitivity anddynamic response characteristics, and a design idea is provided for the design of the highly-sensitivity flexible tactile sensor for an electronic skin application of an intelligent robot.
Owner:ANHUI UNIVERSITY
High heat conduction organosilicon filling and sealing gum
InactiveCN101054507AImprove mechanical propertiesGood electrical propertiesOther chemical processesAdhesivesHeat conductingCohesive strength
The invention discloses an organic silicon potting adhesive with a high heat conduction capacity. The curing time of the additive type organic silicon potting adhesive with a high heat conduction capacity can be controlled by the temperature and the amount of the catalyst. The condensate has good mechanical and electrical properties, especially outstanding cohesive strength, high and low temperature resistance and radiation resistance. The inventive heat-conducting organic silicon potting adhesive includes component A and B: said component A is mixed by following parts by weight: 100 shares of organic silica-base adhesive, 10-80 shares of heat-conducting filling, 3-20 shares of reinforced-filling, 1-10 shares of catalyst; said component A is mixed by following parts by weight: 100 shares of organic silica-base adhesive, 10-80 shares of heat-conducting filling, and 1-10 shares curing agent.
Owner:NANJING UNIV OF TECH
High-frequency copper foil substrate and composite material used thereby
ActiveCN102304264ALow costHigh frequencySynthetic resin layered productsCircuit susbtrate materialsCross-linkSolubility
The invention discloses a high-frequency copper foil substrate with an operating frequency of more than 1GHz, which has a dielectric constant Dk of less than 3.2 and a loss factor Df of less than 0.005 as well as high glass transition temperature, high thermostability and low moisture-absorption characteristic. The high-frequency copper foil substrate contains a special composite material and is prepared by impregnating a reinforcing material with blended resin mixture. The resin mixture of the composite material is prepared by blending the following materials: (a) high molecular weight polybutadiene resin; (b) low molecular weight polybutadiene resin; (c) modified polyphenyl ether thermosetting resin; (d) inorganic powder; (e) flame retardant; (f) cross-linking agent; (g) binding aid; and (h) hardening initiator. In the invention, the drawback of low processability of pure polybutadiene with low viscosity and the drawback of need of adding plasticizer of polyphenyl ether resin (PPE) with low solubility; particularly, the non-viscous pre-impregnated sheets made by the composite material can be processed into copper foil substrates automatically.
Owner:NANYA PLASTICS CORP
Halogen-free Tg resin composite and presoaked material and laminated board made by adopting same
ActiveCN102134375AExcellent dielectric propertiesLow dielectric propertiesPrinted circuit aspectsSynthetic resin layered productsVitrificationPhosphonium
Owner:GUANGDONG SHENGYI SCI TECH
Additive high-thermal-conductivity organic silicon electronic pouring sealant and preparation method thereof
ActiveCN102337033ALow viscosityImprove liquidityNon-macromolecular adhesive additivesOther chemical processesHeat conductingBoron nitride
The invention discloses an additive high-thermal-conductivity organic silicon electronic pouring sealant and a preparation method thereof. The preparation method comprises the following steps of: adding vinyl-ended polydimethylsiloxane, spherical aluminum oxide, boron nitride and silicon carbide whiskers into a kneader, dehydrating and blending at the temperature of 100-150 DEG C and under the vacuum degree of 0.06-0.1MPa, cooling, and grinding for three times to obtain a substrate; adding a hydrogen-containing silicon oil crosslinking agent and a crosslinking inhibitor into the substrate at normal temperature, and fully stirring to prepare a component A; adding a platinum catalyst into the substrate, and fully stirring to prepare a component B; and uniformly blending the component A and the component B having equal part by weight, and defoaming under the vacuum degree of 0.06-0.1MPa to obtain the additive high-thermal-conductivity organic silicon electronic pouring sealant. The pouring sealant has high flowability and thermal conductivity of higher than 1.0 W.m<-1>.K<-1>, and can be widely applied to the fields of electronic apparatuses, automobiles, chip encapsulation, LED (Light-Emitting Diode) encapsulation and the like having high requirements on heat conducting performance; and a condensate has high mechanical property and high electrical property.
Owner:SOUTH CHINA UNIV OF TECH +1
Non-covalently modified graphene field effect transistor-based tumor marker detection sensor and production method thereof
InactiveCN105651845ALittle influence on electrical characteristicsGood electrical propertiesMaterial analysis by electric/magnetic meansInsulation layerMetal electrodes
The invention relates to a non-covalently modified graphene field effect transistor-based tumor marker detection sensor and a production method thereof. The sensor comprises a silica substrate, a graphene channel and a reaction chamber. The production method comprises the following steps: making a metal electrode, carrying out wet transfer on graphene, making the graphene channel and a protection insulation layer of the graphene channel, and modifying the surface of graphene in a non-covalent mode. The sensor has the advantages of convenient making process, simple modification process, easy operation, and high sensitivity and good specificity in application; and the making method can also be used to make most of biosensors of capture probes with amino groups, and the sensor is used to detect target molecules.
Owner:SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
Modified ABS antistatic material and preparation method thereof
The invention discloses a modified ABS antistatic material and a preparation method thereof. The antistatic material is formed by melting the mixture in an injection machine after mixing PEEA, maleic anhydride grafted ABS resin (or styrene maleic anhydride copolymer SMA), ABS resin, zlnc oxide whisker, coupler and other additives according to a given proportion. The antistatic ABS material has the advantages of low surface resistance, permanent static resistance, light color and good mechanics performance; and moreover, the antistatic ABS material has appropriate cost, no toxicity and pollution, simple formation processing technology, easy realization and promising application prospect.
Owner:EAST CHINA UNIV OF SCI & TECH
Nitride semiconductor device and method of manufacturing the same
ActiveUS20080296627A1Improve adhesionImproved ohmic contact characteristicsSolid-state devicesSemiconductor/solid-state device manufacturingContact formationOhmic contact
In the nitride semiconductor device using the silicon substrate, the metal electrode formed on the silicon substrate has both ohmic contact property and adhesion, so that the nitride semiconductor device having excellent electric properties and reliability is obtained. The nitride semiconductor device includes a silicon substrate (2), a nitride semiconductor layer (10) formed on the silicon substrate (2), and metal electrodes (8, 8′) formed in contact with the silicon substrate (2). The metal electrodes (8, 8′) has first metal layers (4, 4′) which are formed in a shape of discrete islands and in contact with the silicon substrate (2), and second metal layers (6, 6′) which are in contact with the silicon substrate (2) exposed among the islands of the first metal layers (4, 4′) and are formed to cover the first metal layers (4, 4′). Further, the second metal layers (6, 6′) are made of a metal capable of forming ohmic contact with silicon, and the first metal layers (4, 4′) are made of an alloy containing a metal and silicon, in which the metal is different than that in the second metal layer (6,6′).
Owner:NICHIA CORP
Porous composite carbon material and application thereof
ActiveCN103295798AGood electrical propertiesLower internal resistanceHybrid capacitor electrodesGrapheneActivated carbonInternal resistance
The invention discloses a porous composite carbon material and application thereof. The porous composite carbon material comprises 0.01wt-99.9wt% of porous thin-layer graphene, porous activated carbon and 0.01wt-20wt% of conductive agent. The porous composite carbon material can be used for manufacturing a supercapacitor comprising a positive electrode and a negative electrode, and at least one of the positive and negative electrodes comprises 0wt-100wt% of the porous composite carbon material. The porous composite carbon material has good electric performance and the supercapacitor manufactured by the porous composite carbon material has the advantages of low internal resistance, high power density and energy density, long service life and the like.
Owner:SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
Flexible bismaleimide, benzoxazine, epoxy-anhydride adduct hybrid adhesive
ActiveUS20140199549A1Improve thermal stabilityLow water absorptionSilicaAcid polymer adhesivesPolyethylene terephthalate glycolThermal expansion
A resin composition which has low stress, and good adhesive property in high temperature and high moisture environments and which is useful in adhesive applications in low stress, high moisture sensitivity level electronic packages. Preferably, a flexible epoxy anhydride adduct modified solid bismaleimide and solid benzoxazine resin composition that can survive high temperature and high moisture conditions and maintain good adhesion strength and minimize the stress resulting from a coefficient of thermal expansion mismatch between a silicon die and a substrate which is Ball Grid Array solder mask or a smart card polyethylene terephthalate or silver or copper metal lead frame.
Owner:PROTAVIC KOREA
Binary carbon material-conductive polymer composite nano gas-sensitive thin film and preparation method thereof
ActiveCN103897183AEnhanced conductivity and gas-sensing propertiesExcellent gas sensing performanceCvd grapheneCarbon nanofiber
The invention discloses a binary carbon material-conductive polymer composite nano gas-sensitive thin film and a preparation method thereof. The binary carbon material-conductive polymer composite nano gas-sensitive thin film is a composite thin film formed by self-assembling a binary carbon material and a conductive polymer material through chemical polymerization, the binary carbon material is a combination of any of a graphene material and a carbon nanotube as well as a carbon nanofiber, nano porous carbon or nano graphite. The composite nano thin film with excellent gas-sensitive characteristic can be prepared by fully utilizing the excellent conductivity and high specific surface area of the carbon nano material and the peculiar response characteristic of the conductive polymer, playing the synergistic and supplementary roles generated among different materials and combining an orderly controllable self-assembled film forming method. The binary carbon material-conductive polymer composite nano gas-sensitive thin film and the preparation method thereof can open up a new approach for the sensitive thin film for a gas sensor which is high in performance, low in cost and capable of working at room temperature.
Owner:UNIV OF ELECTRONIC SCI & TECH OF CHINA
Conductive paste composition for low temperature firing
InactiveUS20130069014A1Good electrical propertiesSuperior adhesive forceMaterial nanotechnologyTransportation and packagingConductive materialsSolar cell
Disclosed is a conductive paste composition for low temperature firing, including conductive copper powder composed of flake powder, spherical powder and nano powder, a melamine-based binder, and an organic solvent, thus enabling the formation of a conductive wire having a high aspect ratio with high printability, and inexpensive formation of a metal wire, and exhibiting superior electrical properties and adhesive force even when conducting low temperature firing at 200° C. or less, so that the conductive paste composition can be usefully applied as a conductive material for forming electrodes of a variety of products such as solar cells, touch panels, printed circuit boards (PCBs), radio-frequency identification (RFID), plasma display panels (PDPs) and so on.
Owner:SAMSUNG ELECTRO MECHANICS CO LTD
Integrated semiconductor light-emitting device and method for manufacturing same
InactiveUS20050175053A1Ease of mass productionExcellent optical propertiesOptical wave guidanceSemiconductor laser arrangementsLight emitting deviceSemiconductor
An integrated semiconductor light-emitting device suitable for being mounted on a pickup is provided. The integrated semiconductor light-emitting device has a first laser part stacked on a semiconductor substrate and a projection-shaped second laser part formed by stack in thin-film-layer form. The second laser part is fitted into a trench formed adjacent to the first laser part in the semiconductor substrate. At least the first and second laser parts and the trench are bonded together through a metal bonding layer. An emission spot of the first laser part and an emission spot of the second laser part are located away in approximately the same horizontal direction perpendicular to the direction of the stack of the first and second laser parts.
Owner:PIONEER CORP
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