Anti-LID black silicon solar high-efficiency cell and production method thereof

Abstract

The invention relates to an anti-LID black silicon solar high-efficiency cell and a production method thereof. The anti-LID black silicon solar high-efficiency cell comprises a positive electrode, a negative electrode, an aluminum back surface field, a P-type silicon wafer substrate, and a PN junction, an SiO2 oxide film and an SiNx film located on the P-type silicon wafer substrate sequentially, wherein the thickness of the PN junction is uniform; and the SiNx film coats the surface of the SiO2 oxide film. Through high-light trapping nano column making, first-time diffusion, edge and phosphosilicate glass removal, second-time diffusion, SiNx surface passivation, anti-reflection film deposition, and cell negative electrode and positive electrode and aluminum back surface field making sequentially, the anti-LID black silicon solar cell is made. Thus, the light energy absorption is enhanced, the photoelectric conversion efficiency is improved, the leakage phenomenon of the cell is reduced, and the anti-LID and PID effects are realized.

Description

technical field [0001] The invention relates to the field of solar cells, and specifically discloses a high-efficiency anti-LID black silicon solar cell and a production method thereof. Background technique [0002] Silicon is one of the most abundant elements in the world, and it is widely used in important fields such as photoelectric detection, optical communication, and microelectronic equipment. However, due to the nature of crystalline silicon, the surface of crystalline silicon has a high reflection of visible-infrared light, which greatly limits the key technical indicators such as sensitivity, usable wavelength range and conversion efficiency of silicon-based optoelectronic devices. In recent years, a kind of microstructured silicon called black silicon has attracted great attention. Due to its extremely high absorption of visible-infrared light, black silicon can be widely used in biology, infrared detection, solar cells, Pharmacy, microelectronics, agriculture an...

AI Technical Summary

Problems solved by technology

Using RIE or MCCE method to prepare black silicon nano light-trapping eye structure can significantly improve the spectral absorption in the visible-infrared band, but due to the increase of the surface area and the introduction of defects during the preparation of black silicon, it has a high surface recombination rate. and lower minority carrier lifetime, resulting in a drop in open circuit voltage and increased leakage, and no significant improvement in the photoelectric conversion efficiency of solar cells

The black silicon nano-light trapping hole structure makes the PN junction depth uneven, and most of the boron and oxygen at the shallow junction of the PN junction are in a metastable state, and it is easy to form a boron-oxygen complex, resulting in a more serious light attenuation (LID) phenomenon

At the same time, the shallow junction of the PN junction is easy to burn through, resulting in more serious leakage of solar cells

Images