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Flip-chip light emitting diodes and method of manufacturing thereof

A flip-chip, light-emitting device technology, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as low luminous efficiency and low adhesion, and achieve increased packaging yield, low contact resistivity, and excellent current-voltage. Effects of Features

Active Publication Date: 2008-10-01
SAMSUNG ELECTRONICS CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, these electrode structures also have disadvantages such as low adhesion and low luminous efficiency due to reflective scattering

Method used

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  • Flip-chip light emitting diodes and method of manufacturing thereof
  • Flip-chip light emitting diodes and method of manufacturing thereof
  • Flip-chip light emitting diodes and method of manufacturing thereof

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Embodiment Construction

[0052] Hereinafter, a flip-chip nitride-based light emitting device according to a preferred embodiment of the present invention will be described in more detail with reference to the accompanying drawings.

[0053] figure 1 A cross-sectional view of a flip-chip nitride-based light emitting device according to a first embodiment of the present invention is shown.

[0054] now refer to figure 1 , a flip-chip nitride-based light-emitting device is formed by the following structure, which includes a substrate 110, a buffer layer 120, an n-type cladding layer 130, an active layer 140, a p-type cladding layer sequentially stacked thereon. layer 150, transparent conductive film layer 170 and reflective layer 180. Reference numerals 190 and 200 denote p-type electrode pads and n-type electrode pads, respectively.

[0055] The part from the substrate 110 to the p-type cladding layer 150 corresponds to a light-emitting structure, and the transparent conductive film layer 170 stacked...

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Abstract

Provided are a flip-chip nitride-based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising a reflective layer formed on the p-type clad layer and at least one transparent conductive thin film layer made up of transparent conductive materials capable of inhibiting diffusion of materials constituting the reflective layer, interposed between the p-type clad layer and reflective layer; and a process for preparing the same. In accordance with the flip-chip nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact properties with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current-voltage properties.

Description

technical field [0001] The invention relates to a flip-chip nitride-based light-emitting device and a preparation method thereof. More particularly, the present invention relates to a flip-chip nitride-based light emitting device having an electrode structure capable of improving luminous efficiency and a method of manufacturing the same. Background technique [0002] The ohmic contact structure between semiconductors and electrodes is very important to realize light emitting devices such as light emitting diodes (LEDs) and laser diodes (LDs) using nitride-based compound semiconductors such as emitting Gallium Nitride (GaN) semiconductor for blue and green light and ultraviolet light. Currently, commercially available GaN-based light-emitting devices are mainly formed on insulating sapphire (Al 2 o 3 ) on the substrate. [0003] Meanwhile, these GaN-based light emitting devices are roughly classified into top light emitting diodes (TLEDs) and flip chip light emitting dio...

Claims

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Application Information

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IPC IPC(8): H01L33/00
Inventor 成泰连宋俊午金庆国洪雄基
Owner SAMSUNG ELECTRONICS CO LTD
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