116results about How to "Reduce contact resistivity" patented technology

A method of electrically contacting a semiconductor layer (13) coated with at least one dielectic layer (12) which is coated with a metal layer the metal layer (11) is applied on the dielectric layer (12) and the metal layer (11) is temporarily locally heated in a line, linear or dotted pattern by means of a source of radiation (9) in a controlled manner in such a way that a local molten mixture, is formed consisting exclusively of the metal layer (11), the dielectric layer (12) and the semiconductor layer (13) are located directly underneath the metal layer (11) and upon solidification, leads to an electrical contact between the semiconductor layer (13) and the metal layer (11).

A source / drain electrode is used in a thin-film transistor substrate containing a substrate, a thin-film transistor semiconductor layer, source / drain electrodes, and a transparent picture electrode. The source / drain electrode includes a nitrogen-containing layer and a thin film of pure aluminum or an aluminum alloy. Nitrogen of the nitrogen-containing layer binds to silicon of the thin-film transistor semiconductor layer, and the thin film of pure aluminum or aluminum alloy is connected to the thin-film transistor semiconductor layer through the nitrogen-containing layer.

A nitride-based light-emitting device and a method of manufacturing the same. The light-emitting device includes a substrate, and an n-cladding layer, an active layer, a p-cladding layer, a grid cell layer and an ohmic contact layer sequentially formed on the substrate. The grid cell layer has separated, conducting particle type cells with a size of less than 30 micrometers buried in the ohmic contact layer. The nitride-based light-emitting device and the method of manufacturing the same improve the characteristics of ohmic contact on the p-cladding layer, thereby increasing luminous efficiency and life span of the device while simplifying a manufacturing process by omitting an activation process after wafer growth.

Provided are a flip-chip type light emitting device and a method of manufacturing the same. The provided flip-chip type light emitting device includes a substrate, an n-type cladding layer, an active layer, a p-type cladding layer, an ohmic contact layer formed of tin oxide to which at least one of antimony, fluorine, phosphorus, and arsenic is doped, and a reflection material formed of a reflective material. According to the provided flip-chip type light emitting device and the method of manufacturing the same, a current-voltage characteristic and durability are improved by applying a conductive oxide electrode structure having low surface resistivity and high carrier concentration.

The invention discloses a production technology of an all-back electrode solar battery. The production technology comprises the steps of: (1) forming a back n+ diffusion layer area and a back p+ diffusion layer area, which are arranged in a finger-crossed manner, on the back surface of a n type silicon substrate, and forming a front surface n+ diffusion layer on the front surface of the n type silicon substrate; (2) carrying out annealing oxidation treatment on the n type silicon substrate to form an oxide layer; (3) deposing passivation layers on the front surface and the back surface of the n type silicon substrate, and deposing a reflection increasing film on the passivation layer on the front surface; and (4) printing conductive slurry on the back passivation layer, after sintering, forming contact electrodes respectively on the back p+ diffusion layer area and the back n+ diffusion layer area, and finishing the preparation of the all-back electrode solar battery. According to the invention, the single conductive slurry is printed on the passivation layers of the back p+ diffusion layer and the back n+ diffusion layer at the same time, the finger-crossed conductive electrodes low in contact resistance are formed on the p+ diffusion layer and the n+ diffusion layer after the sintering, the production technology of the IBC battery is simplified, and the production cost of the IBC battery is lowered.

Forming low contract resistance metal contacts on GaN films by treating a GaN surface using a chlorine gas Inductively Coupled Plasma (ICP) etch process before the metal contacts are formed. Beneficially, the GaN is n-type and doped with Si, while the metal contacts include alternating layers of Ti and Al. Additionally, the GaN film is dipped in a solution of HCl:H2O prior to metal contact formation.

A new transparent conducting oxide (TCO), which can be expressed as AlxGa3-x-yIn5+ySn2-zO16-2z; 0≦x<1, 0<y<3, 0≦z<2, has been used to improve the brightness and current spreading in GaN base LED process. The optical properties of this system are superior to regular Ni / Au transparent conducting layer in blue-green region, and the new Al2O3—Ga2O3—In2O3—SnO2 system is able to increase the brightness at 1.5˜2.5 time to compare to regular process. Furthermore, the new transparent conducting oxide thin film has the highest conductivity, which is better than the Ni / Au transparent conducting thin film.

Provided are a graphene field effect transistor and a manufacturing method thereof.The manufacturing method comprises the following steps that a top gate metal is used as a gate medium under a mask protecting top gate metal, and a gate medium layer is etched to remove the gate medium covering a graphene active area between a gate source and a gate drain; a top gate electrode is used as a mask to etch graphene, and a lattice structure of a graphene material is destroyed to form a defect; then, a metal film layer is formed on a formed device, and a source electrode and a drain electrode are prepared on the metal film layer; and the completed device is annealed.By the adoption of the manufacturing method, the separation distance between the gate source and the gate drain can be decreased, the graphene pollution caused by a device machining process is effectively avoided, the lower contact resistivity can be obtained by partially etching the graphene material in a contact area, and accordingly the performance of the graphene transistor can be improved.

A method of manufacturing a semiconductor device includes providing a semiconductor substrate having a front surface and a back surface; forming a transition metal layer in a surface of the semiconductor substrate; and exposing the semiconductor substrate having the transition metal layer formed thereon to a hydrogen plasma atmosphere formed by microwaves, to cause the transition metal layer to generate heat, Thus, during the exposure of the semiconductor substrate, a portion of the semiconductor substrate contacting the transition metal layer is heated by a transfer of heat from the transition metal layer and, at an interface of the transition metal layer and the semiconductor substrate, an ohmic contact is formed by reaction of the transition metal layer and the semiconductor substrate, such as to form a transition metal silicide when the semiconductor substrate is silicon carbide. The ohmic contact provides a lower contact resistivity and device properties can be prevented from degrading.

In sophisticated semiconductor devices, the contact structure may be formed on the basis of contact bars formed in a lower portion of an interlayer dielectric material, which may then be contacted by contact elements having reduced lateral dimensions so as to preserve a desired low overall fringing capacitance. The concept of contact bars of reduced height level may be efficiently combined with sophisticated replacement gate approaches.

The invention provides a film transistor substrate which has a low contact resistivity and good space continuity even a Cu series alloy wiring film directly contacts with a semiconductor. The film transistor substrate comprises a semiconductor layer and a Cu alloy layer. An oxygen-containing layer is disposed between the semiconductor layer and the Cu alloy layer. A part of or the whole oxygen of the oxygen-containing layer combines with the Si of the semiconductor layer of the film transistor. The Cu alloy layer as an alloy element has X arranged from 2 atom% to 20 atom% (X is at least one of Mn, Ni, Zn and Mg). . The Cu alloy layer is connected to the semiconductor layer of the film transistor through the oxygen-containing layer.

A top-emitting nitride-based light-emitting device and a method of manufacturing the same. The top-emitting nitride-based light-emitting device having a substrate, an n-cladding layer, an active layer, and a p-cladding layer sequentially formed includes: a grid cell layer formed on the p-cladding layer by a grid array of separated cells formed from a conducting material with a width of less than 30 micrometers to improve electrical and optical characteristics; a surface protective layer that is formed on the p-cladding layer and covers at least regions between the cells to protect a surface of the p-cladding layer; and a transparent conducting layer formed on the surface protective layer and the grid cell layer using a transparent conducting material. The light-emitting device and the method of manufacturing the same provide an improved ohmic contact to the p-cladding layer, excellent I-V characteristics, and high light transmittance, thus increasing luminous efficiency of the device.

A semiconductor device manufacturing method which achieves a contact of a low resistivity is provided.In a state where a first metal layer in contact with a semiconductor is covered with a second metal layer for preventing oxidation, only the first metal layer is silicided to form a silicide layer with no oxygen mixed therein. As a material of the first metal layer, a metal having a work function difference of a predetermined value from the semiconductor is used. As a material of the second metal layer, a metal which does not react with the first metal layer at an annealing temperature is used.