The invention relates to a
passivation contact N-type
solar cell and a manufacturing method, a component and a
system. The
passivation contact N-type
solar cell comprises an N-type crystalline siliconsubstrate. A front surface successively comprises a p+ doped area, a front surface
passivation anti-reflection film, a front surface main grid and an auxiliary grid from inside to outside. A back surface successively comprises a tunneling
oxide layer, an n+ doped polysilicon layer, a back surface passivation film and a back
surface electrode from inside to outside. The back
surface electrode andthe n+ doped polysilicon layer form
ohmic contact. A front surface auxiliary grid is aluminum which forms
ohmic contact with the p+ doped area. The
cell has advantages that the front surface auxiliarygrid is aluminum, the
aluminum can directly burn through SiNx and a
recombination rate with
silicon is low, grooving is not needed, a
silver paste is saved and an open-circuit
voltage is high; the n+doped polysilicon layer is taken as a
back surface field of the N-type
solar cell, and an excellent field passivation effect is provided for a
silicon substrate surface; and a
recombination rate of minority carriers is low, and a
cell open-circuit
voltage, a
short circuit current and
energy conversion efficiency are high.