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Semiconductor components, in particular photodetectors, light emitting diodes, optical modulators and waveguides with multilayer structures grown on silicon substrates

A semiconductor component, selected from the group comprising a photodetector, a light emitting diode, an optical modulator and a waveguide. The semiconductor component comprises an Si substrate, an active region formed on said substrate, and an Si capping layer on said active region. In one embodiment the active region is a superlattice comprising alternating layers of Si1-yCy and Si1-x-yGexCy, with the atomic fraction y of the Si1-x-yGexCy layers being equal to or different from the atomic fraction y of the Si1-yCy layers. In another embodiment it is a superlattice comprising a plurality of periods of a three-layer structure comprising Si, Si1-yCy and Si1-xGex layers. In a third embodiment it is a superlattice comprising a plurality of periods of a three-layer structure comprising Si, Si1-yCy and Si1-x-yGexCy layers, with the atomic fraction y of the Si1-x-yGexCy layers being equal to or different from the atomic fraction y of the Si1-yCy layers. The components have faborable optical and electrical properties and are suitable for integration on a Si substrate.
Owner:MAX PLANCK GESELLSCHAFT ZUR FOERDERUNG DER WISSENSCHAFTEN EV

Nitride semiconductor laser device

A nitride semiconductor laser device has a group III nitride semiconductor multilayer structure. The group III nitride semiconductor multilayer structure includes an n-type semiconductor layer, a p-type semiconductor layer and a light emitting layer held between the n-type semiconductor layer and the p-type semiconductor layer, and the p-type semiconductor layer is formed by successively stacking a p-side guide layer, a p-type electron blocking layer in contact with the p-side guide layer and a p-type cladding layer in contact with the p-type electron blocking layer from the side closer to the light emitting layer. The p-side guide layer is formed by stacking a layer made of a group III nitride semiconductor containing Al and a layer made of a group III nitride semiconductor containing no Al. The p-type cladding layer is made of a group III nitride semiconductor containing Al, and the p-type electron blocking layer is made of a group III nitride semiconductor having a larger Al composition than the p-type cladding layer.
Owner:ROHM CO LTD

Light-emitting element, lighting device, light-emitting device, and electronic device

A light-emitting element includes a first electrode; a first light-emitting layer over the first electrode, containing a first phosphorescent compound and a first host material; a second light-emitting layer over the first light-emitting layer, containing a second phosphorescent compound and a second host material; a third light-emitting layer over the second light-emitting layer, containing a third phosphorescent compound and a third host material; and a second electrode over the third light-emitting layer. Between peaks of emission spectra of the first, second, and third phosphorescent compounds, the peak of the emission spectrum of the second phosphorescent compound is on the longest wavelength side and that of the emission spectrum of the third phosphorescent compound is on the shortest wavelength side. The third host material has higher triplet excitation energy than the first host material and the second host material.
Owner:SEMICON ENERGY LAB CO LTD

Illumination apparatus

An illumination apparatus, comprising at least one light emitting source embedded in a waveguide material is disclosed. The waveguide material is capable of propagating light generated by light emitting source(s), such that at least a portion of the light is diffused within the waveguide material and exits through at least a portion of its surface.
Owner:OREE ADVANCED ILLUMINATION SOLUTIONS LTD +1

Ii-vi mqw vscel on a heat sink optically pumped by a GAN ld

Light sources are disclosed. A disclosed light source includes a III-V based pump light source (170) that includes nitrogen and emits light at a first wavelength. The light source further includes a vertical cavity surface emitting laser (VCSEL) that converts at least a portion of the first wavelength light (174) emitted by the pump light source (170) to at least a partially coherent light at a second wavelength (176). The VCSEL includes first and second mirrors (120, 160) that form an optical cavity for light at the second wavelength. The first mirror (120) is substantially reflective at the second wavelength and includes a first multilayer stack. The second mirror (160) is substantially transmissive at the first wavelength and partially reflective and partially transmissive and the second wavelength. The second mirror includes a second multilayer stack. The VCSEL further includes a semiconductor multilayer stack (130) that is disposed between the first and second mirrors and converts at least a portion of the first wavelength light to the second wavelength light. The semiconductor multilayer stack (130) includes a quantum well that includes a Cd(Mg)ZnSe alloy.
Owner:3M INNOVATIVE PROPERTIES CO

Method, control apparatus and powertrain system controller for real-time, self-learning control based on individual operating style

Method, control apparatus and powertrain system controller are provided for real-time, self-learning control based on individual operating style. The method calibrates powertrain system performance in a passenger vehicle in real-time based on individual operating style. The method includes powering the vehicle with the system and generating a sequence of system operating point transitions based on an operating style of an operator of the vehicle during the step of powering. The method further includes learning a set of optimum values of controllable system variables in real-time during the steps of powering and generating based on the sequence of system operating point transitions and predetermined performance criteria for the system. The method still further includes generating control signals based on the set of optimum values to control operation of the system.
Owner:RGT UNIV OF MICHIGAN
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