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208 results about "Nanolithography" patented technology

Nanolithography is a growing field of techniques within nanotechnology dealing with the engineering (etching, writing, printing) of nanometer-scale structures. From Greek, the word can be broken up into three parts: "nano" meaning dwarf, "lith" meaning stone, and "graphy" meaning to write, or "tiny writing onto stone." Today, the word has evolved to cover the design of structures in the range of 10⁻⁹ to 10⁻⁶ meters, or structures in the nanometer range. Essentially, field is a derivative of lithography, only covering significantly smaller structures. All nanolithographic techniques can be separated into two categories: those that etch away molecules leaving behind the desired structure, and those that directly write the desired structure to a surface (similar to the way a 3D printer creates a structure).

Parallel, individually addressable probes for nanolithography

A microfabricated probe array for nanolithography and process for designing and fabricating the probe array. The probe array consists of individual probes that can be moved independently using thermal bimetallic actuation or electrostatic actuation methods. The probe array can be used to produce traces of diffusively transferred chemicals on the substrate with sub-1 micrometer resolution, and can function as an arrayed scanning probe microscope for subsequent reading and variation of transferred patterns.
Owner:THE BOARD OF TRUSTEES OF THE UNIV OF ILLINOIS

Electrostatic nanolithography probe actuation device and method

Method and apparatus for selectively actuating a cantilevered probe for applying a compound to a substrate in nanolithography. A probe having a probe electrode and a substrate having a counter electrode are provided. Voltage applied to the probe electrode and / or counter electrode provides electrostatic attraction between them, moving a probe tip into sufficient proximity to the substrate to apply the patterning compound. Alternatively, a flexible cantilevered probe anchored to a holder includes a layer of conductive material forming a probe electrode. A counter electrode on the holder faces the probe electrode. The holder and probe are positioned so that a probe tip applies the compound to the substrate. The probe is disposed between the substrate and the counter electrode. An electrostatic attractive force generated between the probe electrode and the counter electrode flexes the probe and lifts the tip away from the substrate to suspend writing.
Owner:THE BOARD OF TRUSTEES OF THE UNIV OF ILLINOIS

Method and device for atomic interferometry nanolithography

The invention proposes a novel technique for implementing high performance atomic lithography, and in particular high resolution lithography. The technique makes use of Stern-Gerlach type atomic interferometry enabling disturbances to be implemented in the atomic phase of the beam. Such interaction then directly modulates the intensity of the associated wave in the plane extending transversely to the beam of atoms, and does so in controllable manner. The installation of the invention for nanolithography by atomic interferometry comprises a Stern-Gerlach type interferometer comprising, as its phase object, four-pole magnetic induction having a transverse gradient created by four parallel bars carrying alternating direct currents, bracketed between two separator plates, preceded and followed respectively by a spin polarizer and by an analyzer operating by laser pumping. An additional uniform field is being created by another four additional bars powered in paired manner by adjustable currents in order to create a uniform field of arbitrary intensity and orientation for the interference pattern by adjusting the two current parameters. The source of atoms is a source that continuously discharges metastable helium or argon with approximately Maxwell type speed dispersion of about 30% to 40% in order to obtain a central spot.
Owner:PARIS 13 UNIVERSITY

Short-wavelength polarizing elements and the manufacture and use thereof

While gold wire grids have been used to polarize infrared wavelengths for over a hundred years, they are not appropriate for shorter wavelengths due to their large period. With embodiments of the present invention, grids with periods a few tens of nanometers can be fabricated. Among other things, such grids can be used to polarize visible and even ultraviolet light. As a result, such wire grid polarizers have a wide variety of applications and uses, such as, e.g., in the fabrication of semiconductors, nanolithography, and more.
Owner:PRINCETON UNIV +1

Nanolithography methods and products therefor and produced thereby

In one aspect, a method of nanolithography is provided using a driving force to control the movement of a deposition compound from a scanning probe microscope tip to a substrate. Another aspect of the invention provides a tip for use in nanolithography having an internal cavity and an aperture restricting movement of a deposition compound from the tip to the substrate. The rate and extent of movement of the deposition compound through the aperture is controlled by a driving force.
Owner:NORTHWESTERN UNIV

System for automatic dual-grating alignment in proximity nanometer lithography

The invention relates to a system for automatic dual-grating alignment in proximity nanometer lithography, comprising a light path part, an image processing part and a circuit control part, wherein the light path part comprises a laser source, a lens group, a mask, a silicon wafer, a mask grating, a silicon wafer grating, a beam splitter, an objective lens and a CCD (charge coupled device) image detector; lasers pass through the lens group and then forms uniform and collimated parallel lights which are subjected to diffraction for a plurality of times through the silicon wafer grating and the mask grating, and the two gratings have approaching periods and are superposed with a certain gap; certain two same-level diffraction light beams from the two gratings are subjected to interference superposition, Moire interference fringes with the period of being amplified compared with that of the original grating are formed on the surface of the silicon wafer grating, and then the Moire interference fringes are imaged on the CCD image detector by virtue of the objective lens. By processing images, phase difference of two groups of Moire interference fringes can be extracted, further the relative displacement of the mask and the silicon wafer can be calculated, and the silicon wafer is controlled to move by the circuit control part so as to realize complete alignment of the silicon wafer and the mask. By utilizing the system provided by the invention, real-time alignment can be achieved, the accuracy is high, and the automation of alignment can be realized.
Owner:INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI
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