Multi-beam semiconductor laser interference nanoimprinting technology and system

Abstract

The invention discloses multi-beam semiconductor laser interference nanoimprinting technology and system which adopt the following principle that the required two or more bundles of coherent lights can be obtained by using semiconductor pulse laser through beam splitting, the coherent lights are subjected to coupling, beam expansion and reshaping and redistributed on the surface of material by using the light intensity in an interference field to form a periodical interference pattern. When the system is used for imprinting, a photosensing material can be directly subjected to the interference exposure and then etching without masking. By using an optical fiber beam splitting device as a light splitter, the complicity of a light path is greatly reduced, and the system is more stable and reliable; in addition, the selection from two light beams to a plurality of light beams is more flexible and convenient.

Description

technical field [0001] The invention relates to a micro-nano surface structure manufacturing technology and system, in particular to a simple and low-cost multi-beam semiconductor laser interference nanolithography technology and system, which can be widely used in information storage, advanced manufacturing, new energy and new Materials and other technology fields. technical background [0002] The principle of laser interference lithography is to use the energy distribution of the interference pattern array generated by the interference of two or more laser beams to interact with materials to create surface micro-nano structures. The interference pattern can be an energy distribution of a line (two-beam interference) or a two-dimensional array of spots (multi-beam interference). This technology has the advantage of continuously adjustable feature size, shape and period from nanometers to micrometers. In air, the minimum period can be close to 1 / 2 wavelength. Laser inter...

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Problems solved by technology

[0003] The current laser interference lithography method is mainly based on the traditional lithography system design idea, the laser used is relatively large in size, and the optical path design of the beam splitting system is also very complicated, which makes the complexity and price of the entire lithography system Very high, not only has no portability at all, but also greatly limits the application range of the system

For example, in a traditional photolithography system, the laser is generally fixed at a specific position in the room, and the exposure method is either a single exposure or multiple exposures by rotating and shifting the sample platform, and due to the complexity of the spectroscopic system, the coherent It is relatively difficult to precisely adjust the incident angle and phase of the beam, and the choice from two-beam interference to multi-beam interference will also cause a large change in the optical path, and the flexibility is not high

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