2252results about "Superconductor devices" patented technology

A memory cell and method of fabricating the memory cell includes an insulating layer formed on a first electrode layer, the insulating layer having a first opening, a stencil layer formed on the insulating layer, and having a second opening formed in an area of the first opening, a phase-change material layer formed on a surface of the first electrode layer in the first opening, and an electrically conductive layer including a first portion formed on the stencil layer and defining a second electrode layer and a second portion formed on the phase-change material layer.

The present invention relates to a tunable resonating arrangement comprising a resonator apparatus (10), input / output coupling (4) means for coupling electromagnetic energy into / out of the resonator apparatus, and a tuning device (3) for application of a biasing voltage / electric field to the resonator apparatus. The resonator apparatus comprises a first resonator (1) and a second resonator (2). Said first resonator is non-tunable and said second resonator is tunable and comprises a ferroelectric substrate (21). Said first and second resonators are separated by a ground plane (13) which is common for said first and second resonators, and coupling means (5) are provided for providing coupling between said first and second resonators. For tuning of the resonator apparatus, the biasing voltage / electric field is applied to the second resonator (2).

A cooling system is provided employing multiple coolant conditioning units (CCUs). Each CCU, which is coupled to a different, associated electronics rack of multiple electronics racks to be cooled, includes a heat exchanger, a first cooling loop with a control valve, and a second cooling loop. The first cooling loop receives chilled facility coolant from a source and passes at least a portion thereof via the control valve through the heat exchanger. The second cooling loop provides cooled system coolant to the associated electronics rack, and expels heat in the heat exchanger from the electronics rack to the chilled facility coolant in the first cooling loop. The control valve allows regulation of the facility coolant flow through the heat exchanger, thereby allowing independent control of temperature of the system coolant in the second cooling loop. Various CCU and associated component redundancies of the cooling system are also provided.

An analog processor, for example a quantum processor may include a plurality of elongated qubits that are disposed with respect to one another such that each qubit may selectively be directly coupled to each of the other qubits via a single coupling device. Such may provide a fully interconnected topology.

A tunnel barrier in proximity with a layer of a rare earth element-transition metal (RE—TM) alloy forms a device that passes negatively spin-polarized current. The rare earth element includes at least one element selected from the group consisting of Gd, Tb, Dy, Ho, Er, Tm, and Yb. The RE and TM have respective sub-network moments such that the absolute magnitude of the RE sub-network moment is greater than the absolute magnitude of the TM sub-network moment. An additional layer of magnetic material may be used in combination with the tunnel barrier and the RE—TM alloy layer to form a magnetic tunnel junction. Still other layers of tunnel barrier and magnetic material may be used in combination with the foregoing to form a flux-closed double tunnel junction device.

Provided is a highly accurate optical pumping magnetometer, in which a static magnetic field and an oscillating field to be applied to a vapor cell are stabilized. To this end, the optical pumping magnetometer includes: Helmholtz coils for applying a constant static magnetic field to a vapor cell serving as a magnetic field detector; fluxgate magnetometers for detecting environmental magnetic noise in two directions of X-axis direction and Y-axis direction other than Z-axis direction which is a direction for detecting a magnetic field coming out of a measurement object while locating the vapor cell in the center thereof; magnetometer drive circuits for driving the fluxgate magneotometers; current converters for converting outputs of the magnetometer drive circuits into amount of currents; and magnetic field generating coils for generating a magnetic field in a phase opposite to the environmental magnetic noise in the two directions.

A memory cell and method of fabricating the memory cell includes an insulating layer formed on a first electrode layer, the insulating layer having a first opening, a stencil layer formed on the insulating layer, and having a second opening formed in an area of the first opening, a phase-change material layer formed on a surface of the first electrode layer in the first opening, and an electrically conductive layer including a first portion formed on the stencil layer and defining a second electrode layer and a second portion formed on the phase-change material layer.

A memory using a tunnel barrier is disclosed. A memory element includes a tunneling barrier and two conductive materials. The conductive material typically has mobile ions that either move towards or away from the tunneling barrier in response to a voltage across the memory element. A low conductivity region is irreversibly formed for one time programmable memory. The tunneling barrier can be formed by mobile ions combining with complementary ions. The low conductivity region increases the effective width of the tunnel barrier, making electrons tunnel a greater distance, which reduces the memory element's conductivity. By varying conductivity, multiple states can be created in the memory cell.

A semiconductor device in which the threshold voltage of transistors is controlled through the applied substrate bias and having relatively small size. The semiconductor device includes: a clock signal line; a shield wiring for shielding the clock signal line from another interconnection; and a substrate bias generating circuit. The substrate bias is applied through the shield wiring to a region on which a transistor is formed. The threshold voltage of the transistor depends to the substrate bias applied to the transistor.

A structure comprising (i) a first information device, (ii) a second information device, (iii) a first coupling element and (iv) a second coupling element is provided. The first information device has at least a first lobe and a second lobe that are in electrical communication with each other. The second information device and has at least a first lobe and a second lobe that are in electrical communication with each other. The first coupling element inductively couples the first lobe of the first information device to the first lobe of the second information device. The second coupling element inductively couples the first lobe of the first information device to the second lobe of the second information device.

A memory device including a phase change element and a vacuum jacket. The device includes a first electrode element; a phase change element in contact with the first electrode element; an upper electrode element in contact with the phase change element; a bit line electrode in contact with the upper electrode element; and a dielectric fill layer surrounding the phase change element and the upper electrode element, spaced from the same and sealed by the bit line electrode to define a vacuum jacket around the phase change element and upper electrode element.

A MgO tunnel barrier is sandwiched between semiconductor material on one side and a ferri- and / or ferromagnetic material on the other side to form a spintronic element. The semiconductor material may include GaAs, for example. The spintronic element may be used as a spin injection device by injecting charge carriers from the magnetic material into the MgO tunnel barrier and then into the semiconductor. Similarly, the spintronic element may be used as a detector or analyzer of spin-polarized charge carriers by flowing charge carriers from the surface of the semiconducting layer through the MgO tunnel barrier and into the (ferri- or ferro-) magnetic material, which then acts as a detector. The MgO tunnel barrier is preferably formed by forming a Mg layer on an underlayer (e.g., a ferromagnetic layer), and then directing additional Mg, in the presence of oxygen, towards the underlayer.

A compact multi-stage switching network (100), and a router (510) incorporating such multi-stage switching network, adapted for simultaneously routing a plurality of data packets from a first plurality of input ports (110) to selected ones of a second plurality of output ports (190) comprising: a first stack (140) of IC switching layers (113) that are stacked in physical contact with one another, each IC switching layer containing at least one switching element circuit (142); a second stack (160) of IC switching layers (113) that are stacked in physical contact with one another, each IC switching layer (113) containing at least one switching element circuit (162); and interconnecting circuitry (150) that connects the first stack (140) of IC layers to the second stack (160) of IC layers to form the compact multi-stage switching network. The stacks (140, 160) are preferably mated to one another in a transverse fashion in order to achieve a natural full-mesh connection. Also contemplated are the use of superconducting IC switching circuits (142) and a suitable superconducting cooling housing (730), as permitted by the compact nature of the multi-stage switching network (100), in order to operate at high speed and low power.

Provided is a highly accurate optical pumping magnetometer, in which a static magnetic field and an oscillating field to be applied to a vapor cell are stabilized. To this end, the optical pumping magnetometer includes: Helmholtz coils for applying a constant static magnetic field to a vapor cell serving as a magnetic field detector; fluxgate magnetometers for detecting environmental magnetic noise in two directions of X-axis direction and Y-axis direction other than Z-axis direction which is a direction for detecting a magnetic field coming out of a measurement object while locating the vapor cell in the center thereof; magnetometer drive circuits for driving the fluxgate magneotometers; current converters for converting outputs of the magnetometer drive circuits into amount of currents; and magnetic field generating coils for generating a magnetic field in a phase opposite to the environmental magnetic noise in the two directions.

An electrical junction that includes a semiconductor (e.g., C, Ge, or an Si-based semiconductor), a conductor, and an interface layer disposed therebetween. The interface layer is sufficiently thick to depin a Fermi level of the semiconductor, yet sufficiently thin to provide the junction with a specific contact resistance of less than or equal to approximately 1000 Ω-μm2, and in some cases a minimum specific contact resistance.