Method for reducing Ohmic contact resistivity of gallium nitride high electron mobility transistor
A technology with high electron mobility and ohmic contact, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as difficult ohmic contact resistance, achieve good process implantability, improve device performance, and improve device performance Effect
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[0017] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0018] see figure 1 , is a schematic flowchart of a method for reducing the ohmic contact resistivity of a gallium nitride high electron mobility transistor according to an embodiment of the present invention. The method of the present embodiment comprises the following steps:
[0019] S11: Spin-coat photoresist on the surface of the wafer to form a photoresist layer.
[0020] Among them, such as figure 2 As shown, a photoresist layer 20 is formed on the s...
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