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Low-pressure diffusion technology for solar cells

A solar cell, solar cell technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of low cost, difference in square resistance, and high conversion efficiency, achieve high conversion efficiency, and reduce the cost of chemical and special gas losses , the effect of increasing the amount of doping

Inactive Publication Date: 2017-05-31
EGING PHOTOVOLTAIC TECHNOLOGY CO LTD
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Problems solved by technology

[0003] The technical problem to be solved by the present invention is: in order to solve the problem that the square resistance difference between the furnace mouth and the furnace tail is relatively large in the solar cell diffusion process in the prior art, a low-pressure diffusion process for solar cells is now improved. The prepared solar cells have good diffusion uniformity, high conversion efficiency and low cost

Method used

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  • Low-pressure diffusion technology for solar cells
  • Low-pressure diffusion technology for solar cells
  • Low-pressure diffusion technology for solar cells

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Embodiment 1

[0038] The diffusion furnace used has five heating zones, and the specific process flow is as follows:

[0039] Into the furnace: place the cleaned and textured crystalline silicon wafers on the quartz boat in sequence, place the quartz boat full of crystalline silicon wafers on the quartz boat support, and then move them from the horizontal diffusion furnace at a speed of 200mm / min by SiC paddles The furnace mouth is pushed into the furnace at a constant speed, and large nitrogen is introduced into the furnace at the same time during the pushing process. The initial temperature in the furnace is 750 ° C, the maximum nitrogen flow rate is 3L / min, and the pressure is 91mbar;

[0040] Vacuuming: After the quartz boat is pushed to the specified position in the furnace, the SiC paddle returns to the initial position outside the furnace at a speed of 300mm / min, the furnace door is closed, the temperature rises to 760°C, and the maximum nitrogen flow rate is reduced to 2.7L / min. The...

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Abstract

The invention relates to the technical field of solar cell preparation, in particular to a low-pressure diffusion technology for solar cells. A diffusion technology process is performed in a low-pressure state, so that low impurity source saturated vapor pressure is distributed in a furnace chamber, molecular free paths of impurities are improved, airflow field stability is improved, crystal silicon wafer diffusion evenness is greatly improved, and sheet resistance evenness is improved. The manufactured crystal silicon solar cells have high conversion efficiency, simple operation and large yield; meanwhile loss cost of chemicals and special gas is remarkably reduced, and a multistep diffusion method can reduce surface dead layers and increase the doping amount of electrical active phosphorus; compared with a conventional diffusion technology, open-circuit voltage Voc of the solar cells prepared through the technology is improved by 3mV, the photoelectric conversion efficiency Eff is absolutely improved by 0.1%, and power Pmpp is improved by 0.026W.

Description

technical field [0001] The invention relates to the technical field of solar battery sheet preparation, in particular to a low-voltage diffusion process for solar battery sheets. Background technique [0002] Diffusion of solar cells is a process of making silicon wafers of solar cells: P-N junction diffusion, diffusion process: put the silicon wafers into a high-temperature diffusion furnace, pass through gases such as nitrogen and POCL3, and decompose at high temperatures on the surface of the silicon wafers Forming a P-N junction, the purpose of its diffusion junction (p-n junction): On the surface of P-type silicon, it is formed by diffusing P atoms. The existing crystalline silicon wafers are generally placed in a horizontal diffusion furnace, and mixed gas is introduced into It is made by mixing nitrogen and phosphorus oxychloride in proportion, and diffuses crystalline silicon wafers under normal pressure. This method generally has a large difference in square resista...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L21/223H01L31/068
CPCH01L21/223H01L31/068H01L31/1804Y02E10/547Y02P70/50
Inventor 孙铁囤方辉郭银银
Owner EGING PHOTOVOLTAIC TECHNOLOGY CO LTD
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