Crystalline silicon solar cell and diffusion method thereof
A diffusion method and cell technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as low conversion efficiency of solar cells, and achieve uniform sheet resistance, improved uniformity, and uniform distribution
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Embodiment 1
[0043] This embodiment provides a diffusion method, which is mainly used in the production of crystalline silicon solar cells. The basic process is as follows: image 3 shown, including the following steps:
[0044] Step S31, putting the silicon wafer into a diffusion furnace, raising the temperature to 780°C-800°C,
[0045] Preferably it is 790°C.
[0046] Step S32, feed small nitrogen and oxygen with a volume flow ratio of 4:1 to 7:1 into the diffusion furnace through the diffusion furnace tube, and simultaneously feed large nitrogen at 5L / min to 7L / min, and keep the temperature in the diffusion furnace at 780°C ~800℃, the time is 15min~20min,
[0047] The flow rate of small nitrogen is preferably 1.3L / min, the flow rate of oxygen is preferably 0.3L / min, the flow rate of large nitrogen is preferably 5.4L / min, and the time is preferably 17min.
[0048]Step S33: 2L / min-3L / min of oxygen and 4L / min-5L / minL of large nitrogen are introduced into the diffusion furnace through th...
Embodiment 2
[0079] This embodiment provides a crystalline silicon solar cell prepared by the diffusion method described in the previous embodiment.
[0080] The PN junction depth of the solar cell is between 0.18um and 0.22um, that is, about 0.2um; the unevenness of the sheet resistance is controlled within 4%; the conversion efficiency is between 16.5% and 17.5%, and the average value can reach 16.84%.
[0081] The junction depth of the solar cell is shallower than that under the existing diffusion technology, the unevenness of the sheet resistance is also reduced a lot, and the average conversion efficiency is improved compared with the existing diffusion technology.
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