Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for improving photoelectric conversion efficiency of crystal silicon solar battery

A photoelectric conversion efficiency, solar cell technology, applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems that are not enough to make up for the increase in cost, the process is complicated, and it is difficult to apply to actual production. It is suitable for large-scale production and equipment. Low investment and the effect of improving photoelectric conversion efficiency

Inactive Publication Date: 2011-02-16
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
View PDF7 Cites 16 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to achieve the above requirements, photolithography technology or extremely sophisticated alignment equipment must be used, which is complex and difficult to apply to actual production; and the benefits brought by the increase in cell efficiency may not be enough to make up for the increase in costs and the decline in productivity loss, commercially unviable

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for improving photoelectric conversion efficiency of crystal silicon solar battery
  • Method for improving photoelectric conversion efficiency of crystal silicon solar battery
  • Method for improving photoelectric conversion efficiency of crystal silicon solar battery

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] 1. Perform acid texturing and pre-diffusion cleaning on P-type polysilicon wafers;

[0028] 2. Wafer in POCl 3 Diffusion of high-temperature phosphorus is carried out under the atmosphere, the entire diffusion surface is doped with low concentration, the sheet resistance is 60Ω / □, and POCl 3 Reacts with silicon to form phosphosilicate glass;

[0029] 3. If figure 1 As shown in the figure, a laser with a power of 10W and a wavelength of 532nm is used to scan parallel lines on the surface of a silicon wafer covered with phosphosilicate glass, so that the phosphorous in the phosphosilicate glass at the irradiated area diffuses into the silicon, forming a thin parallel line array doped with high concentration. , the distance between parallel lines is 2mm;

[0030] 4. Etch the edge of the silicon wafer to remove the peripheral PN junction;

[0031] 5. After washing away the phosphosilicate glass on the surface of the silicon wafer, deposit a silicon nitride anti-reflecti...

Embodiment 2

[0034] 1. Alkali texturing and pre-diffusion cleaning of P-type monocrystalline silicon wafers;

[0035] 2. Wafer in POCl 3 Diffusion of high-temperature phosphorus is carried out in the atmosphere, the entire diffusion surface is doped with low concentration, the sheet resistance is 120Ω / □, and POCl 3 Reacts with silicon to form phosphosilicate glass;

[0036] 3. If figure 1 As shown, use a laser with a power of 10W and a wavelength of 532nm to scan the surface of a silicon wafer covered with phosphosilicate glass, so that the phosphorous in the phosphosilicate glass at the irradiated area diffuses into the silicon, forming an array of highly doped thin parallel lines. The spacing is 0.3mm;

[0037] 4. Etch the edge of the silicon wafer to remove the peripheral PN junction;

[0038] 5. After washing away the phosphosilicate glass on the surface of the silicon wafer, deposit a silicon nitride anti-reflection film on the diffusion surface;

[0039] 6. Screen printing front...

Embodiment 3

[0041] 1. Alkali texturing and pre-diffusion cleaning of P-type monocrystalline silicon wafers;

[0042] 2. Wafer in POCl 3 Diffusion of high-temperature phosphorus in the atmosphere, the entire diffusion surface is doped with low concentration, the sheet resistance is 200Ω / □, after the diffusion is completed, the phosphosilicate glass on the surface of the silicon wafer is washed away;

[0043] 3. Press figure 2 As shown in the figure, the phosphor paste is printed on the diffusion surface of the silicon wafer, and the figure forms a parallel line array with a line spacing of 0.8mm. The angle between the array and the straight edge of the wafer is 45°. Then put the silicon wafer into the chain diffusion furnace for rapid diffusion, so that the printed phosphorous paste area forms a highly doped area;

[0044] 4. Etch the edge of the silicon wafer to remove the peripheral PN junction;

[0045] 5. Deposit silicon nitride anti-reflection film on the diffusion surface;

[0...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Line spacingaaaaaaaaaa
Sheet resistanceaaaaaaaaaa
Sheet resistanceaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for improving photoelectric conversion efficiency of a crystal silicon solar battery. The method is characterized in that: based on the conventional crystal silicon solar battery process, high-doped parallel linear arrays are formed on the surface of an emitter by adopting processes such as screen printing or local laser annealing and the like; and the high-doped parallel linear arrays are crossed with fine grids of a metal electrode in a vertical or certain angle mode. The method improves the ohmic contact of the metal grid electrode and silicon, and meanwhile reduces the number of the required fine grids so as to reduce the shading area and improve the photoelectric conversion efficiency of the crystal silicon solar battery. The method has low equipment investment, does not need to change other conventional process equipment, and is suitable for large-scale industrialized production.

Description

technical field [0001] The invention relates to the technical field of solar cell production, in particular to a method for improving the photoelectric conversion efficiency of a crystalline silicon solar cell. Background technique [0002] The existing commercial production process of crystalline silicon solar cells is as follows: texturing to form a surface anti-reflection structure; diffusion doping to form a PN junction to separate photo-generated carriers; removal of peripheral PN junctions to prevent leakage current; anti-reflection coating coating ; Screen printed electrodes followed by sintering to form metallization. The technological process is simple and easy for large-scale production, but the photoelectric conversion efficiency of the prepared solar cell is low. [0003] In the existing process of preparing crystalline silicon solar cells, the bottleneck that limits the improvement of cell efficiency is the mutual restriction of diffusion and metallization proc...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L31/0352H01L31/18
CPCY02P70/50
Inventor 万青黄晋李莉龚骏
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com