Manufacturing method for thin film crystal silicon perovskite heterojunction solar cell

Abstract

The invention relates to semiconductor devices specially suitable for converting light energy into electric energy, in particular to a manufacturing method for a thin film crystal silicon perovskite heterojunction solar cell which has an electron hole recombination inhibition structure layer and adopts a high-temperature-resistant and non-transparent conductive substrate. The method comprises the steps of: preparing a P-type crystal silicon thin film layer on the high-temperature-resistant and non-transparent conductive substrate; preparing the electron hole recombination inhibition structure layer on the P-type crystal silicon thin film layer; spin-coating the electron hole recombination inhibition structure layer with a perovskite light absorption layer; making an electron transmission layer composed of dense titanium dioxide on the perovskite light absorption layer; and preparing a top electrode on the electron transmission layer composed of dense titanium dioxide. According to the method, the defects of current leakage, internal short circuit and limitation of a glass substrate to a high-temperature link of a subsequent preparation process possibly existent in a thin film crystal silicon perovskite heterojunction solar cell in the prior art are overcome.

Description

technical field [0001] The technical solution of the invention relates to a semiconductor device specially suitable for converting light energy into electric energy, specifically a method for preparing a thin-film crystal silicon perovskite heterojunction solar cell. Background technique [0002] The thin-film crystalline silicon perovskite composite solar cell composed of thin-film crystalline silicon and perovskite not only overcomes the problems of insufficient stability and high preparation cost of ordinary perovskite solar cells due to the use of organic hole transport materials, but also overcomes the It overcomes the disadvantage of large amount of silicon material used in perovskite solar cells using bulk crystalline silicon as the hole transport material, and at the same time overcomes the disadvantage of amorphous silicon in perovskite solar cells using non-thin-film crystalline silicon as the hole transport material. Many material defects lead to performance degra...

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Problems solved by technology

CN201410568822.X discloses an all-solid-state perovskite microcrystalline silicon composite solar cell and its preparation method, but it has the following disadvantages: first, the deposition rate of microcrystalline silicon is relatively slow, generally no more than 5 angstroms per second, and the deposition rate affects production efficiency and cost

However, limited by the maximum temperature that glass materials can withstand, many new processes for preparing thin-film crystalline silicon perovskite heterojunction solar cells are hindered by the following obstacles: the above-mentioned cells cannot be used in the new process of excimer laser crystallization of amorphous silicon thin films The higher crystallization temperature and longer crystallization time limit the crystallization degree of thin-film crystalline silicon, which hinders the improvement of the performance of the solar cell; moreover, it also limits the subsequent preparation of thin-film crystalline silicon perovskite. New preparation of SiO for mass-junction solar cells 2 The process link of the electron-hole recombination suppression structure layer cannot adopt the high temperature thermal oxidation method that is higher than the maximum temperature that the glass material can withstand, so the preparation cost cannot be reduced

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