Solar cell and surface treatment method of hydrogenated amorphous silicon i film layer thereof

Abstract

The invention discloses a silicon heterojunction solar cell and a surface treatment method of a hydrogenated amorphous silicon i film layer thereof. Plasma treatment is carried out on the surface of the hydrogenated amorphous silicon i film layer by adopting a gas mixture of hydrogen and argon or hydrogen and helium, the hydrogenated amorphous silicon i film layer can be preferably cleaned in a physical manner through argon or helium plasmas, and the increase of the amount of the helium plasmas is further promoted, so that the passivating and cleaning effects for the surface of the hydrogenated amorphous silicon i film layer are strengthened; and moreover, slight damage to the surface of the hydrogenated amorphous silicon i film layer can be generated in the physical bombarding process of the argon or helium plasmas, and the hydrogen plasmas can play a passivating role on the surface of the hydrogenated amorphous silicon i film layer and can also repair the slight damage. Through the synergistic effect of the gas mixture of hydrogen and argon or hydrogen and helium, better passivating and cleaning effects can be achieved for the surface of the hydrogenated amorphous silicon i film layer, so that the battery performance is promoted.

Description

technical field [0001] The invention relates to the technical field of solar cell production, in particular to a silicon heterojunction solar cell and a method for treating the surface of a hydrogenated amorphous silicon i-film layer thereof. Background technique [0002] Silicon heterojunction solar cell is a hybrid cell made of crystalline silicon substrate and amorphous silicon thin film technology. It has the advantages of high conversion efficiency, simple process flow, and low temperature coefficient, and has attracted widespread attention. The production process of existing silicon heterojunction solar cells includes: cleaning, texturing, hydrogenated amorphous silicon i(ia-Si:H) film layer and hydrogenated amorphous silicon p(pa-Si:H) film layer and hydrogenation Deposition of amorphous silicon n(na-Si:H) film, deposition of transparent conductive oxide film, screen printing of gate electrode, annealing, etc. [0003] Plasma treatment technology is one of the import...

AI Technical Summary

Problems solved by technology

[0005] Existing silicon heterojunction solar cells mainly use hydrogen gas to process the deposited hydrogenated amorphous silicon i-film layer with plasma. This treatment method is a chemical reaction-based treatment process, in which hydrogen plasma can Defect states such as unsaturated silicon dangling bonds on the surface of the crystalline silicon i film layer reduce the recombination of the interface to achieve the purpose of passivating the defect states at the interface. Effective cleaning effect, so that pollutants cannot be completely cleaned, thus affecting battery performance

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