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Sb-Te-Ti phase-change storage material and Ti-Sb2Te phase-change storage material

An sb-te-ti, ti-sb2te technology, applied in the field of phase change materials and their preparation, can solve the problems of poor thermal stability, doping, and reduced data retention, and achieve enhanced thermal stability, uniform distribution, and data retention. Retention boost effect

Active Publication Date: 2012-07-11
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Sb-rich Sb-Te series phase change materials have a very fast crystallization rate, but due to the increase of Sb content, the data retention is reduced and the thermal stability is poor, which needs to be modified by doping

Method used

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  • Sb-Te-Ti phase-change storage material and Ti-Sb2Te phase-change storage material
  • Sb-Te-Ti phase-change storage material and Ti-Sb2Te phase-change storage material
  • Sb-Te-Ti phase-change storage material and Ti-Sb2Te phase-change storage material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0053] Preparation of Sb 60 Te 30 Ti 10 Nanocomposite phase change materials:

[0054] The nanocomposite phase change material in this embodiment adopts Sb 60 Te 30 Co-sputtering alloy target and Ti target. The specific preparation conditions are: during the co-sputtering process, Ar gas with a purity of 99.999% and Sb 60 Te 30 The target adopts radio frequency power supply, the Ti target adopts direct current power supply, the adopted radio frequency power supply power is 25W, and the adopted direct current power supply power is 15W. Sb 2 After the Te target glows, turn on the Ti target power. The co-sputtering time is 20 minutes, and the film thickness is about 170nm.

[0055] The Sb obtained in this embodiment 60 Te 30 Ti 10 Nanocomposite phase change materials obtained through testing Figure 1-3 :

[0056] figure 1 Sb with different heating rates 60 Te 30 Ti 10 The graph of the relationship between sheet resistance and temperature. The heating rate used...

Embodiment 2

[0062] Preparation of Sb 72 Te 18 Ti 10 Nanocomposite phase change materials:

[0063] The nanocomposite phase change material in this embodiment adopts Sb 72 Te 18 Co-sputtering alloy target and Ti target. The specific preparation conditions are: during the co-sputtering process, Ar gas with a purity of 99.999% and Sb 72 Te 18 The target adopts radio frequency power supply, the Ti target adopts direct current power supply, the adopted radio frequency power supply power is 25W, and the adopted direct current power supply power is 15W. Sb 72 Te 18 After the target glows, turn on the Ti target power. The co-sputtering time is 30 minutes, and the film thickness is about 200nm.

[0064] The Sb obtained in this embodiment 72 Te 18 Ti 10 Nanocomposite phase change materials have been tested and known:

[0065] Sb obtained from 72 Te 18 Ti 10 Sb at different heating rates of nanocomposite phase change materials 80 Te 10 Ti 10 The graph of the relationship between ...

Embodiment 3

[0070] Preparation of Sb 50 Te 30 Ti 20 Nanocomposite phase change materials:

[0071] The nanocomposite phase change material in this embodiment adopts Sb 50 Te 30 Co-sputtering alloy target and Ti target. The specific preparation conditions are: during the co-sputtering process, Ar gas with a purity of 99.999% and Sb 50 Te 30 The target adopts radio frequency power supply, the Ti target adopts direct current power supply, the adopted radio frequency power supply power is 25W, and the adopted direct current power supply power is 15W. Sb 2 After the Te target glows, turn on the Ti target power. The co-sputtering time is 50 minutes, and the film thickness is about 250nm.

[0072] The Sb obtained in this embodiment 50 Te 30 Ti 20 Nanocomposite phase change materials have been tested and known:

[0073] Sb obtained from 50 Te 30 Ti 20 Sb at different heating rates of nanocomposite phase change materials 50 Te 30 Ti 20 The graph of the relationship between sheet...

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Abstract

The invention relates to a Sb-Te-Ti phase-change thin-film material capable of being used for a phase-change memory, and preparation and application of the Sb-Te-Ti phase-change thin-film material. The novel Sb-Te-Ti phase-change storage material is prepared by doping Ti into a Sb-Te phase-change material, the doped Ti forms bonds with both Sb and Te, and the chemical general formula of the Sb-Te-Ti phase-change storage material is SbxTeyTi100-x-y, wherein x is more than 0 and less than 80, and y is more than 0 and less than 100-x. When the phase-change storage material is a Ti-Sb2Te phase-change storage material, a Ti atom replaces a Sb atom without phase separation. The grain growth is dominant in the crystallization process of the conventional Sb-Te phase-change material, so that the phase change rate is high, but the retention cannot meet industrial requirements. The crystallization temperature of the novel Sb-Te-Ti phase-change storage material is greatly raised, the retention is promoted, and the thermal stability is enhanced; simultaneously, the non-crystalline state resistance is reduced and the crystalline state resistance is increased; and the novel Sb-Te-Ti phase-change storage material can be widely applied to the phase-change memory.

Description

technical field [0001] The invention relates to a phase-change material and a preparation method thereof, in particular to a Sb-Te-Ti phase-change thin film material which can be used in a phase-change memory. Background technique [0002] The principle of phase change memory (PCRAM) is to use the chalcogenide compound as the storage medium, and use electric energy (heat) to convert the material between the crystalline state (low resistance) and the amorphous state (high resistance) to realize the writing and erasing of information. , The readout of information is achieved by measuring the size of the resistance and comparing its high resistance "1" or low resistance "0". [0003] The crystallization process of Sb-Te series phase change materials is dominated by grain growth, so the phase change rate is fast, and the melting point is higher than that of GST (Ge 2 Sb 2 Te 5 ) is low, so the required power consumption is low. However, Sb-Te series phase change materials al...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
Inventor 吴良才朱敏宋志棠饶峰宋三年刘波封松林
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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