Phase change storage unit based on VOx gate tube

Abstract

The invention discloses a phase change storage unit based on a VOx gate tube. The storage unit comprises a lower electrode layer, a VOx gating layer, a phase change function layer and an upper electrode layer. According to the invention, by use of the VOx, the gating of the phase change function layer is achieved; storage of the data is achieved on the basis of gating of the phase change function layer; by imposing voltage on the VOx, the state switching of the VOx is controlled, so an objective that the phase change storage unit is in a non-gating state during low voltage and in a gating system during high voltage can be achieved; through the switch control of the VOx, leakage current of the a phase change memory array can be effectively reduced and enough big Reset current is provided; a high-temperature technique condition is not required; preparation technique of the phase change memory is simplified; cost is reduced; and it is possible to commercialize the highly integrated phase change memory.

Description

technical field [0001] The invention belongs to the technical field of semiconductor storage, and more specifically relates to a VO-based x Strobe phase-change memory cells. Background technique [0002] Phase-change memory PCM is one of the most promising non-volatile memories to replace Flash memory as the next generation. Phase-change memory cells use chalcogenide compounds as phase-change materials to achieve reversible transitions between crystalline and amorphous states under voltage pulses. Applying an electrical pulse with medium amplitude, longer pulse width, and slower pulse falling edge can change the phase change material from amorphous state to crystalline state, which is used to write data from "0" to "1"; apply a The electrical pulse with higher amplitude, narrower pulse width and steep falling edge will change the phase change material from crystalline state to amorphous state, which is used to erase data. The current high-performance system requires the m...

AI Technical Summary

Problems solved by technology

[0004] Aiming at the above defects or improvement needs of the prior art, the present invention provides a VO-based x The phase-change memory cell of the gating tube, by controlling the VO x The switch is used to realize the gating of the phase change memory unit, adopting the 1D1T structure, which can realize 3D stacking, thereby solving the technical problems of low storage density of the traditional 1T1R structure phase change memory and the high temperature required for the traditional 1D1R manufacturing process of diodes

Images